DE1564007A1 - Halbleiterbauelemente und Verfahren zu ihrer Herstellung - Google Patents

Halbleiterbauelemente und Verfahren zu ihrer Herstellung

Info

Publication number
DE1564007A1
DE1564007A1 DE19661564007 DE1564007A DE1564007A1 DE 1564007 A1 DE1564007 A1 DE 1564007A1 DE 19661564007 DE19661564007 DE 19661564007 DE 1564007 A DE1564007 A DE 1564007A DE 1564007 A1 DE1564007 A1 DE 1564007A1
Authority
DE
Germany
Prior art keywords
zone
semiconductor
conductivity
silicon
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661564007
Other languages
German (de)
English (en)
Other versions
DE1564007B2 (enrdf_load_stackoverflow
Inventor
Gray Peter Vance
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE1564007A1 publication Critical patent/DE1564007A1/de
Publication of DE1564007B2 publication Critical patent/DE1564007B2/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19661564007 1965-06-01 1966-05-28 Halbleiterbauelemente und Verfahren zu ihrer Herstellung Pending DE1564007A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46000965A 1965-06-01 1965-06-01

Publications (2)

Publication Number Publication Date
DE1564007A1 true DE1564007A1 (de) 1970-07-16
DE1564007B2 DE1564007B2 (enrdf_load_stackoverflow) 1970-11-12

Family

ID=23827050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661564007 Pending DE1564007A1 (de) 1965-06-01 1966-05-28 Halbleiterbauelemente und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) USB460009I5 (enrdf_load_stackoverflow)
DE (1) DE1564007A1 (enrdf_load_stackoverflow)
GB (1) GB1131151A (enrdf_load_stackoverflow)
NL (1) NL6607547A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585464A (en) * 1967-10-19 1971-06-15 Ibm Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material

Also Published As

Publication number Publication date
NL6607547A (enrdf_load_stackoverflow) 1966-12-02
DE1564007B2 (enrdf_load_stackoverflow) 1970-11-12
USB460009I5 (enrdf_load_stackoverflow)
GB1131151A (en) 1968-10-23

Similar Documents

Publication Publication Date Title
DE3881799T2 (de) Verfahren zur Herstellung von CMOS-Bauelementen.
DE69032735T2 (de) Verfahren zum Herstellen von Hochspannungs- und Niederspannungs-CMOS-Transistoren in einem einzigen integrierten Schaltungs-Chip
DE3780369T2 (de) Verfahren zum herstellen einer halbleiterstruktur.
DE69615458T2 (de) Dünnfilmtransistor über einem isolierten Halbleitersubstrat und Verfahren zur Herstellung
DE2212049C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung und Verfahren zur Herstellung eines Transistors
DE3012363C2 (de) Verfahren zur Bildung der Kanalbereiche und der Wannen von Halbleiterbauelementen
DE69633711T2 (de) Isolierungshalbleiteranordnung mit hoher Durchbruchspannung und Verfahren zu ihrer Herstellung
EP0847593B1 (de) Verfahren zur herstellung einer eeprom-halbleiterstruktur
DE3628488A1 (de) Isolationsstruktur in mos-bauelementen und verfahren zu ihrer herstellung
DE3002051A1 (de) Verfahren zur herstellung von komplementaeren mos-transistoren hoher integration fuer hohe spannungen
DE2335799A1 (de) Sperrschicht-feldeffekttransistoren in dielektrisch isolierten mesas
DE19821092A1 (de) Verfahren zum Herstellen von CMOS-Transistoren
DE2441432B2 (de) Verfahren zur Herstellung eines VMOS-Transistors
DE3603470A1 (de) Verfahren zur herstellung von feldeffektbauelementen auf einem siliziumsubstrat
DE2241600A1 (de) Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
DE2824419A1 (de) Halbleitervorrichtung und verfahren zu deren herstellung
DE19709002A1 (de) Verfahren zur Erzeugung von überbrückten, dotierten Zonen
DE2454705A1 (de) Ladungskopplungsanordnung
DE3324332A1 (de) Verfahren zur herstellung von cmos-transistoren auf einem siliziumsubstrat
DE3424181A1 (de) Cmos verfahren zur herstellung integrierter schaltungen, insbesondere dynamischer speicherzellen
DE2447354A1 (de) Verfahren zur herstellung eines feldeffekttransistors
DE3015782A1 (de) Feldeffekttransistor mit isolierter steuerelektrode und verfahren zur herstellung desselben
DE3427293A1 (de) Vertikale mosfet-einrichtung
DE2834724A1 (de) Mos-feldeffekttransistoren fuer hoehere spannungen
DE69519016T2 (de) Hochspannungs-ldd-mosfet mit erhöhter durchbruchspannung und herstellungsverfahren