DE1564007B2 - - Google Patents
Info
- Publication number
- DE1564007B2 DE1564007B2 DE19661564007 DE1564007A DE1564007B2 DE 1564007 B2 DE1564007 B2 DE 1564007B2 DE 19661564007 DE19661564007 DE 19661564007 DE 1564007 A DE1564007 A DE 1564007A DE 1564007 B2 DE1564007 B2 DE 1564007B2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- semiconductor
- planar
- zones
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 151
- 239000013078 crystal Substances 0.000 claims description 38
- 238000004519 manufacturing process Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 66
- 229910052710 silicon Inorganic materials 0.000 description 52
- 239000010703 silicon Substances 0.000 description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
- 238000000034 method Methods 0.000 description 24
- 239000003990 capacitor Substances 0.000 description 15
- 230000007704 transition Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46000965A | 1965-06-01 | 1965-06-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1564007A1 DE1564007A1 (de) | 1970-07-16 |
| DE1564007B2 true DE1564007B2 (enrdf_load_stackoverflow) | 1970-11-12 |
Family
ID=23827050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661564007 Pending DE1564007A1 (de) | 1965-06-01 | 1966-05-28 | Halbleiterbauelemente und Verfahren zu ihrer Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | USB460009I5 (enrdf_load_stackoverflow) |
| DE (1) | DE1564007A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1131151A (enrdf_load_stackoverflow) |
| NL (1) | NL6607547A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3585464A (en) * | 1967-10-19 | 1971-06-15 | Ibm | Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material |
-
0
- US US460009D patent/USB460009I5/en active Pending
-
1966
- 1966-05-28 DE DE19661564007 patent/DE1564007A1/de active Pending
- 1966-05-31 GB GB24275/66A patent/GB1131151A/en not_active Expired
- 1966-06-01 NL NL6607547A patent/NL6607547A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6607547A (enrdf_load_stackoverflow) | 1966-12-02 |
| DE1564007A1 (de) | 1970-07-16 |
| USB460009I5 (enrdf_load_stackoverflow) | |
| GB1131151A (en) | 1968-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0001550B1 (de) | Integrierte Halbleiteranordnung für eine Bauelementstruktur mit kleinen Abmessungen und zugehöriges Herstellungsvefahren | |
| DE60132994T2 (de) | Verfahren zur herstellung eines leistungs-mosfets | |
| EP0010596B1 (de) | Verfahren zur Ausbildung von Maskenöffnungen bei der Herstellung von Halbleiteranordnungen | |
| EP0001574B1 (de) | Halbleiteranordnung für Widerstandsstrukturen in hochintegrierten Schaltkreisen und Verfahren zur Herstellung dieser Halbleiteranordnung | |
| DE2512373B2 (de) | Isolierschicht-Feldeffekttransistor mit tiefer Verarmungszone | |
| DE2441432B2 (de) | Verfahren zur Herstellung eines VMOS-Transistors | |
| DE4013643A1 (de) | Bipolartransistor mit isolierter steuerelektrode und verfahren zu seiner herstellung | |
| DE2241600A1 (de) | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung | |
| DE2718449A1 (de) | Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte anordnung | |
| DE1803024A1 (de) | Integriertes Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE2133976B2 (de) | Monolithisch integrierte Halbleiteranordnung | |
| DE1514017B2 (de) | Elektrische steuerbares halbleiterbauelement | |
| DE1614264B2 (de) | Transistor | |
| DE2218680C2 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE2162445A1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Anordnung | |
| DE2111633A1 (de) | Verfahren zur Herstellung eines Oberflaechen-Feldeffekt-Transistors | |
| DE2911726C2 (de) | Verfahren zur Herstellung eines Feldeffekttransistors | |
| DE2318179C2 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE2141695B2 (de) | Verfahren zum herstellen eines monolithischen halbleiterbauelementes | |
| DE3119137A1 (de) | Halbleiter und verfahren zu deren herstellung | |
| EP1050076B1 (de) | Verfahren zur herstellung von dioden | |
| DE2558925A1 (de) | Verfahren zur herstellung einer halbleitervorrichtung in der technik der integrierten injektionslogik | |
| DE3015101C2 (enrdf_load_stackoverflow) | ||
| DE1564007B2 (enrdf_load_stackoverflow) | ||
| DE2403816A1 (de) | Halbleiteranordnung und verfahren zur herstellung einer derartigen anordnung |