DE1540434A1 - Hallgenerator,bestehend aus einem Halbleiterplaettchen - Google Patents
Hallgenerator,bestehend aus einem HalbleiterplaettchenInfo
- Publication number
- DE1540434A1 DE1540434A1 DE19651540434 DE1540434A DE1540434A1 DE 1540434 A1 DE1540434 A1 DE 1540434A1 DE 19651540434 DE19651540434 DE 19651540434 DE 1540434 A DE1540434 A DE 1540434A DE 1540434 A1 DE1540434 A1 DE 1540434A1
- Authority
- DE
- Germany
- Prior art keywords
- hall generator
- hall
- cross
- generator according
- legs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 230000000295 complement effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 244000027321 Lychnis chalcedonica Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0097403 | 1965-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1540434A1 true DE1540434A1 (de) | 1970-02-26 |
Family
ID=7520715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651540434 Pending DE1540434A1 (de) | 1965-06-01 | 1965-06-01 | Hallgenerator,bestehend aus einem Halbleiterplaettchen |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1540434A1 (cg-RX-API-DMAC7.html) |
| GB (2) | GB1144155A (cg-RX-API-DMAC7.html) |
| NL (1) | NL6607580A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2947291A1 (de) * | 1978-11-24 | 1980-06-12 | Victor Company Of Japan | Verbindungshalbleiter-hall-effekt-element |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3684997A (en) * | 1968-09-14 | 1972-08-15 | Denki Onkyo Co Ltd | Hall effect device having an output voltage of the nth power characteristics with magnetic induction |
| DE102005028461A1 (de) | 2005-06-17 | 2006-12-28 | Micronas Gmbh | Verfahren zum Testen eines Wafers, insbesondere Hall-Magnetfeld-Sensors und Wafer bzw. Hallsensor |
| CN104535087B (zh) * | 2014-12-26 | 2017-06-09 | 上海集成电路研发中心有限公司 | 霍尔元件及霍尔元件结构 |
-
1965
- 1965-06-01 DE DE19651540434 patent/DE1540434A1/de active Pending
-
1966
- 1966-06-01 GB GB24512/66A patent/GB1144155A/en not_active Expired
- 1966-06-01 GB GB39971/67A patent/GB1144156A/en not_active Expired
- 1966-06-01 NL NL6607580A patent/NL6607580A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2947291A1 (de) * | 1978-11-24 | 1980-06-12 | Victor Company Of Japan | Verbindungshalbleiter-hall-effekt-element |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1144156A (en) | 1969-03-05 |
| NL6607580A (cg-RX-API-DMAC7.html) | 1966-12-02 |
| GB1144155A (en) | 1969-03-05 |
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