GB1144155A - Hall generators - Google Patents
Hall generatorsInfo
- Publication number
- GB1144155A GB1144155A GB24512/66A GB2451266A GB1144155A GB 1144155 A GB1144155 A GB 1144155A GB 24512/66 A GB24512/66 A GB 24512/66A GB 2451266 A GB2451266 A GB 2451266A GB 1144155 A GB1144155 A GB 1144155A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cross
- hall
- plate
- june
- arms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
1,144,155. Hall generators. SIEMENSSCHUCKERTWERKE A.G. 1 June, 1966 [1 June, 19651, No. 24512/66. Heading H1K. A Hall plate is in the shape of a cross with current and Hall voltage electrodes disposed at the ends of and extending the full width of the arms of the cross. The ratio of arm lengthwidth lies between 0.6 and 1.0 to afford optimum linearity with a finite load resistance. The cross may be Maltese or have rectangular arms and the electrodes may be soldered or welded to electrodeposited layers of copper or silver. Preferably the plate is formed from a rectangular plate of indium arsenide, antimonide or arseno-phosphide by etching or sandblasting through a mask.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0097403 | 1965-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1144155A true GB1144155A (en) | 1969-03-05 |
Family
ID=7520715
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24512/66A Expired GB1144155A (en) | 1965-06-01 | 1966-06-01 | Hall generators |
| GB39971/67A Expired GB1144156A (en) | 1965-06-01 | 1966-06-01 | Hall generators |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB39971/67A Expired GB1144156A (en) | 1965-06-01 | 1966-06-01 | Hall generators |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1540434A1 (en) |
| GB (2) | GB1144155A (en) |
| NL (1) | NL6607580A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3684997A (en) * | 1968-09-14 | 1972-08-15 | Denki Onkyo Co Ltd | Hall effect device having an output voltage of the nth power characteristics with magnetic induction |
| EP1734374A1 (en) | 2005-06-17 | 2006-12-20 | Micronas GmbH | Method for testing a wafer, in particular hall-magnetic field sensor and wafer or hall sensor, respectively |
| CN104535087A (en) * | 2014-12-26 | 2015-04-22 | 上海集成电路研发中心有限公司 | Hall element and hall element structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5572091A (en) * | 1978-11-24 | 1980-05-30 | Victor Co Of Japan Ltd | Hall element |
-
1965
- 1965-06-01 DE DE19651540434 patent/DE1540434A1/en active Pending
-
1966
- 1966-06-01 GB GB24512/66A patent/GB1144155A/en not_active Expired
- 1966-06-01 GB GB39971/67A patent/GB1144156A/en not_active Expired
- 1966-06-01 NL NL6607580A patent/NL6607580A/xx unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3684997A (en) * | 1968-09-14 | 1972-08-15 | Denki Onkyo Co Ltd | Hall effect device having an output voltage of the nth power characteristics with magnetic induction |
| EP1734374A1 (en) | 2005-06-17 | 2006-12-20 | Micronas GmbH | Method for testing a wafer, in particular hall-magnetic field sensor and wafer or hall sensor, respectively |
| US7492178B2 (en) | 2005-06-17 | 2009-02-17 | Micronas Gmbh | Method and apparatus for testing a hall magnetic field sensor on a wafer |
| CN104535087A (en) * | 2014-12-26 | 2015-04-22 | 上海集成电路研发中心有限公司 | Hall element and hall element structure |
| CN104535087B (en) * | 2014-12-26 | 2017-06-09 | 上海集成电路研发中心有限公司 | Hall element and hall element structure |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1144156A (en) | 1969-03-05 |
| NL6607580A (en) | 1966-12-02 |
| DE1540434A1 (en) | 1970-02-26 |
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