DE1464319C3 - H albleite rvorrichtung - Google Patents

H albleite rvorrichtung

Info

Publication number
DE1464319C3
DE1464319C3 DE1464319A DE1464319A DE1464319C3 DE 1464319 C3 DE1464319 C3 DE 1464319C3 DE 1464319 A DE1464319 A DE 1464319A DE 1464319 A DE1464319 A DE 1464319A DE 1464319 C3 DE1464319 C3 DE 1464319C3
Authority
DE
Germany
Prior art keywords
electrode
layer
conductivity
avalanche
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1464319A
Other languages
German (de)
English (en)
Other versions
DE1464319B2 (de
DE1464319A1 (de
Inventor
Oscar Willem Eindhoven Memelink (Niederlande)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1464319A1 publication Critical patent/DE1464319A1/de
Publication of DE1464319B2 publication Critical patent/DE1464319B2/de
Application granted granted Critical
Publication of DE1464319C3 publication Critical patent/DE1464319C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/00—
    • H10P95/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE1464319A 1962-07-19 1963-07-17 H albleite rvorrichtung Expired DE1464319C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL281182 1962-07-19

Publications (3)

Publication Number Publication Date
DE1464319A1 DE1464319A1 (de) 1969-02-13
DE1464319B2 DE1464319B2 (de) 1974-08-22
DE1464319C3 true DE1464319C3 (de) 1975-04-30

Family

ID=19753993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1464319A Expired DE1464319C3 (de) 1962-07-19 1963-07-17 H albleite rvorrichtung

Country Status (7)

Country Link
US (2) USRE27052E (cg-RX-API-DMAC10.html)
BE (1) BE635129A (cg-RX-API-DMAC10.html)
BR (1) BR6350845D0 (cg-RX-API-DMAC10.html)
DE (1) DE1464319C3 (cg-RX-API-DMAC10.html)
GB (1) GB1052435A (cg-RX-API-DMAC10.html)
NL (1) NL281182A (cg-RX-API-DMAC10.html)
SE (1) SE310912B (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector
US3519894A (en) * 1967-03-30 1970-07-07 Gen Electric Low temperature voltage limiter
US3582830A (en) * 1967-09-08 1971-06-01 Polska Akademia Nauk Instytut Semiconductor device intended especially for microwave photodetectors
FR2420846A1 (fr) 1978-03-21 1979-10-19 Thomson Csf Structure semi-conductrice a avalanche comportant une troisieme electrode

Also Published As

Publication number Publication date
NL281182A (cg-RX-API-DMAC10.html)
US3324358A (en) 1967-06-06
BE635129A (cg-RX-API-DMAC10.html)
DE1464319B2 (de) 1974-08-22
BR6350845D0 (pt) 1973-12-27
GB1052435A (cg-RX-API-DMAC10.html)
SE310912B (cg-RX-API-DMAC10.html) 1969-05-19
USRE27052E (en) 1971-02-09
DE1464319A1 (de) 1969-02-13

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977