FR2420846A1 - Structure semi-conductrice a avalanche comportant une troisieme electrode - Google Patents

Structure semi-conductrice a avalanche comportant une troisieme electrode

Info

Publication number
FR2420846A1
FR2420846A1 FR7808144A FR7808144A FR2420846A1 FR 2420846 A1 FR2420846 A1 FR 2420846A1 FR 7808144 A FR7808144 A FR 7808144A FR 7808144 A FR7808144 A FR 7808144A FR 2420846 A1 FR2420846 A1 FR 2420846A1
Authority
FR
France
Prior art keywords
avalanche
active layer
electrode
semi
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7808144A
Other languages
English (en)
Other versions
FR2420846B1 (fr
Inventor
Felix Diamand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7808144A priority Critical patent/FR2420846A1/fr
Priority to US06/021,767 priority patent/US4286276A/en
Priority to DE19792911133 priority patent/DE2911133A1/de
Priority to GB7909905A priority patent/GB2017407B/en
Priority to JP3376679A priority patent/JPS54130885A/ja
Publication of FR2420846A1 publication Critical patent/FR2420846A1/fr
Application granted granted Critical
Publication of FR2420846B1 publication Critical patent/FR2420846B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Microwave Amplifiers (AREA)

Abstract

L'invention concerne une nouvelle structure, du type à avalanche présentant une électrode supplémentaire qui s'ajoute aux deux électrodes classiques de la diode à avalanche. Sur un bloc de matériau semiconducteur 5 comportant un substrat 1 et une couche active 2 du type de celle des diodes à avalanche, on dépose un contact ohmique 3 sur une face et, sur la face opposée, deux peignes dont les dents 41 et 42 sont intercalées en laissant des espacements e du même ordre de grandeur que l'épaisseur de la couche active h. L'avalanche qui naît entre une dent 41 et le contact 3 est réglable dans une certaine mesure si la polarisation appliquée sur la dent voisine 42 satisfait à certaines conditions. Application aux oscillateurs et amplificateurs à très haute fréquence
FR7808144A 1978-03-21 1978-03-21 Structure semi-conductrice a avalanche comportant une troisieme electrode Granted FR2420846A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7808144A FR2420846A1 (fr) 1978-03-21 1978-03-21 Structure semi-conductrice a avalanche comportant une troisieme electrode
US06/021,767 US4286276A (en) 1978-03-21 1979-03-19 Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness
DE19792911133 DE2911133A1 (de) 1978-03-21 1979-03-21 Avalanche-halbleiterstruktur mit einer dritten elektrode
GB7909905A GB2017407B (en) 1978-03-21 1979-03-21 Semiconductor structure of the avalanche type comprising a third electrode
JP3376679A JPS54130885A (en) 1978-03-21 1979-03-22 Semiconductor and amplifier using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7808144A FR2420846A1 (fr) 1978-03-21 1978-03-21 Structure semi-conductrice a avalanche comportant une troisieme electrode

Publications (2)

Publication Number Publication Date
FR2420846A1 true FR2420846A1 (fr) 1979-10-19
FR2420846B1 FR2420846B1 (fr) 1980-09-19

Family

ID=9206080

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7808144A Granted FR2420846A1 (fr) 1978-03-21 1978-03-21 Structure semi-conductrice a avalanche comportant une troisieme electrode

Country Status (5)

Country Link
US (1) US4286276A (fr)
JP (1) JPS54130885A (fr)
DE (1) DE2911133A1 (fr)
FR (1) FR2420846A1 (fr)
GB (1) GB2017407B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0043654A3 (fr) * 1980-07-01 1982-09-22 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Diodes semi-conductrices et procédé pour leur fabrication
US4638341A (en) * 1984-09-06 1987-01-20 Honeywell Inc. Gated transmission line model structure for characterization of field-effect transistors
DE19530092A1 (de) 1995-08-16 1997-02-20 Daimler Benz Ag Überprüfbarer Foliendrucksensor
RU2654352C1 (ru) * 2017-01-20 2018-05-17 Федеральное государственное унитарное предприятие "Ростовский-на-Дону научно-исследовательский институт радиосвязи" (ФГУП "РНИИРС") Трёхэлектродный полупроводниковый прибор

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2360996A1 (fr) * 1976-06-15 1978-03-03 Thomson Csf Diode semiconductrice utilisant le temps de transit des porteurs de charge, possedant une electrode a matrice de micropointes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3111590A (en) * 1958-06-05 1963-11-19 Clevite Corp Transistor structure controlled by an avalanche barrier
DE1564957A1 (de) * 1966-12-24 1970-01-02 Telefunken Patent Halbleiteranordnung
GB1311748A (en) * 1969-06-21 1973-03-28 Licentia Gmbh Semiconductor device
US3622844A (en) * 1969-08-18 1971-11-23 Texas Instruments Inc Avalanche photodiode utilizing schottky-barrier configurations
FR2077474B1 (fr) * 1969-12-24 1973-10-19 Labo Electronique Physique
US3684901A (en) * 1970-05-15 1972-08-15 Sperry Rand Corp High frequency diode energy transducer and method of manufacture
US3675092A (en) * 1970-07-13 1972-07-04 Signetics Corp Surface controlled avalanche semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2360996A1 (fr) * 1976-06-15 1978-03-03 Thomson Csf Diode semiconductrice utilisant le temps de transit des porteurs de charge, possedant une electrode a matrice de micropointes

Also Published As

Publication number Publication date
FR2420846B1 (fr) 1980-09-19
GB2017407B (en) 1982-08-18
DE2911133A1 (de) 1979-09-27
JPS54130885A (en) 1979-10-11
GB2017407A (en) 1979-10-03
US4286276A (en) 1981-08-25

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Legal Events

Date Code Title Description
ST Notification of lapse