FR2359507A1 - Fabrication de composants semi-conducteurs a grande capacite de blocage - Google Patents

Fabrication de composants semi-conducteurs a grande capacite de blocage

Info

Publication number
FR2359507A1
FR2359507A1 FR7721860A FR7721860A FR2359507A1 FR 2359507 A1 FR2359507 A1 FR 2359507A1 FR 7721860 A FR7721860 A FR 7721860A FR 7721860 A FR7721860 A FR 7721860A FR 2359507 A1 FR2359507 A1 FR 2359507A1
Authority
FR
France
Prior art keywords
semiconductor components
manufacturing
blocking capacity
large blocking
notches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7721860A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of FR2359507A1 publication Critical patent/FR2359507A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Fabrication de composants semi-conducteurs à grande capacité de blocage. On pratique des rainures 2 avant préparation des zones en forme de couche. Après une opération de diffusion on pratique des entailles 12 à travers chaque région marginale d'une des jonctions pn. On procède à la passivation de la surface dans les entailles, à la mise en place des contacts et aux vérifications électriques avant séparation des pastilles par fractionnement le long des rainures 2. Application notamment aux thyristors.
FR7721860A 1976-07-24 1977-07-18 Fabrication de composants semi-conducteurs a grande capacite de blocage Pending FR2359507A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2633324A DE2633324C2 (de) 1976-07-24 1976-07-24 Verfahren zum Herstellen von Halbleiterbauelementen hoher Sperrspannungsbelastbarkeit

Publications (1)

Publication Number Publication Date
FR2359507A1 true FR2359507A1 (fr) 1978-02-17

Family

ID=5983823

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7721860A Pending FR2359507A1 (fr) 1976-07-24 1977-07-18 Fabrication de composants semi-conducteurs a grande capacite de blocage

Country Status (9)

Country Link
US (1) US4135291A (fr)
JP (1) JPS5315084A (fr)
BR (1) BR7704608A (fr)
CH (1) CH615046A5 (fr)
DE (1) DE2633324C2 (fr)
FR (1) FR2359507A1 (fr)
GB (1) GB1589733A (fr)
IT (1) IT1080969B (fr)
SE (2) SE424118B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2410363A1 (fr) * 1977-11-28 1979-06-22 Silicium Semiconducteur Ssc Procede de fabrication de caisson dans un dispositif a semi-conducteurs
FR2508706A1 (fr) * 1981-06-29 1982-12-31 Westinghouse Electric Corp Dispositifs a semi-conducteurs pour fortes puissances, passives avec du verre

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103447A (en) * 1980-01-22 1981-08-18 Toshiba Corp Dicing method of semiconductor wafer
US4355457A (en) * 1980-10-29 1982-10-26 Rca Corporation Method of forming a mesa in a semiconductor device with subsequent separation into individual devices
FR2542148B1 (fr) * 1983-03-01 1986-12-05 Telemecanique Electrique Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible
US4814296A (en) * 1987-08-28 1989-03-21 Xerox Corporation Method of fabricating image sensor dies for use in assembling arrays
US4904609A (en) * 1988-05-06 1990-02-27 General Electric Company Method of making symmetrical blocking high voltage breakdown semiconductor device
JPH0750700B2 (ja) * 1989-06-27 1995-05-31 三菱電機株式会社 半導体チップの製造方法
US5041896A (en) * 1989-07-06 1991-08-20 General Electric Company Symmetrical blocking high voltage semiconductor device and method of fabrication
KR940016546A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
DE102004063180B4 (de) * 2004-12-29 2020-02-06 Robert Bosch Gmbh Verfahren zum Herstellen von Halbleiterchips aus einem Siliziumwafer und damit hergestellte Halbleiterbauelemente
US8163624B2 (en) * 2008-07-30 2012-04-24 Bowman Ronald R Discrete semiconductor device and method of forming sealed trench junction termination
US20100025809A1 (en) 2008-07-30 2010-02-04 Trion Technology, Inc. Integrated Circuit and Method of Forming Sealed Trench Junction Termination
US8174131B2 (en) * 2009-05-27 2012-05-08 Globalfoundries Inc. Semiconductor device having a filled trench structure and methods for fabricating the same
WO2015019540A1 (fr) * 2013-08-08 2015-02-12 シャープ株式会社 Substrat d'élément semi-conducteur et son procédé de production

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021819A1 (de) * 1969-05-05 1970-11-19 Gen Electric Halbleiterbauelement mit Glaspassivierung
FR2100997A1 (fr) * 1970-08-04 1972-03-31 Silec Semi Conducteurs
DE2306842A1 (de) * 1973-02-12 1974-08-15 Siemens Ag Verfahren zum herstellen einer vielzahl von halbleiterelementen aus einer einzigen halbleiterscheibe

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3121279A (en) * 1957-12-31 1964-02-18 Philips Corp Method of fastening connecting wires to electrical component parts
US3414780A (en) * 1966-01-06 1968-12-03 Int Rectifier Corp High voltage semiconductor device with electrical gradient-reducing groove
US3608186A (en) * 1969-10-30 1971-09-28 Jearld L Hutson Semiconductor device manufacture with junction passivation
JPS5137467Y2 (fr) * 1971-08-07 1976-09-14
JPS5235500B2 (fr) * 1972-06-29 1977-09-09
US3879839A (en) * 1973-06-04 1975-04-29 Ibm Method of manufacturing multi-function LSI wafers
JPS5631898B2 (fr) * 1974-01-11 1981-07-24
JPS5719869B2 (fr) * 1974-09-18 1982-04-24

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021819A1 (de) * 1969-05-05 1970-11-19 Gen Electric Halbleiterbauelement mit Glaspassivierung
FR2100997A1 (fr) * 1970-08-04 1972-03-31 Silec Semi Conducteurs
DE2306842A1 (de) * 1973-02-12 1974-08-15 Siemens Ag Verfahren zum herstellen einer vielzahl von halbleiterelementen aus einer einzigen halbleiterscheibe

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2410363A1 (fr) * 1977-11-28 1979-06-22 Silicium Semiconducteur Ssc Procede de fabrication de caisson dans un dispositif a semi-conducteurs
FR2508706A1 (fr) * 1981-06-29 1982-12-31 Westinghouse Electric Corp Dispositifs a semi-conducteurs pour fortes puissances, passives avec du verre

Also Published As

Publication number Publication date
DE2633324C2 (de) 1983-09-15
DE2633324A1 (de) 1978-01-26
CH615046A5 (fr) 1979-12-28
US4135291A (en) 1979-01-23
BR7704608A (pt) 1978-04-04
JPS5315084A (en) 1978-02-10
GB1589733A (en) 1981-05-20
SE424118B (sv) 1982-06-28
SE7706678L (sv) 1978-01-25
IT1080969B (it) 1985-05-16

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