SE424118B - Forfarande for framstellning av halvledarkomponenter med hog sperrformaga - Google Patents
Forfarande for framstellning av halvledarkomponenter med hog sperrformagaInfo
- Publication number
- SE424118B SE424118B SE7706667A SE7706667A SE424118B SE 424118 B SE424118 B SE 424118B SE 7706667 A SE7706667 A SE 7706667A SE 7706667 A SE7706667 A SE 7706667A SE 424118 B SE424118 B SE 424118B
- Authority
- SE
- Sweden
- Prior art keywords
- procedure
- manufacturing
- semiconductor components
- lock
- lock semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2633324A DE2633324C2 (de) | 1976-07-24 | 1976-07-24 | Verfahren zum Herstellen von Halbleiterbauelementen hoher Sperrspannungsbelastbarkeit |
Publications (1)
Publication Number | Publication Date |
---|---|
SE424118B true SE424118B (sv) | 1982-06-28 |
Family
ID=5983823
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7706678A SE7706678L (sv) | 1976-07-24 | 1977-06-08 | Forfarande for framstellning av halvledarkomponenter med hog sperrformaga |
SE7706667A SE424118B (sv) | 1976-07-24 | 1977-06-08 | Forfarande for framstellning av halvledarkomponenter med hog sperrformaga |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7706678A SE7706678L (sv) | 1976-07-24 | 1977-06-08 | Forfarande for framstellning av halvledarkomponenter med hog sperrformaga |
Country Status (9)
Country | Link |
---|---|
US (1) | US4135291A (sv) |
JP (1) | JPS5315084A (sv) |
BR (1) | BR7704608A (sv) |
CH (1) | CH615046A5 (sv) |
DE (1) | DE2633324C2 (sv) |
FR (1) | FR2359507A1 (sv) |
GB (1) | GB1589733A (sv) |
IT (1) | IT1080969B (sv) |
SE (2) | SE7706678L (sv) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2410363A1 (fr) * | 1977-11-28 | 1979-06-22 | Silicium Semiconducteur Ssc | Procede de fabrication de caisson dans un dispositif a semi-conducteurs |
JPS56103447A (en) * | 1980-01-22 | 1981-08-18 | Toshiba Corp | Dicing method of semiconductor wafer |
US4355457A (en) * | 1980-10-29 | 1982-10-26 | Rca Corporation | Method of forming a mesa in a semiconductor device with subsequent separation into individual devices |
BR8203630A (pt) * | 1981-06-29 | 1983-06-14 | Westinghouse Electric Corp | Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro |
FR2542148B1 (fr) * | 1983-03-01 | 1986-12-05 | Telemecanique Electrique | Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible |
US4814296A (en) * | 1987-08-28 | 1989-03-21 | Xerox Corporation | Method of fabricating image sensor dies for use in assembling arrays |
US4904609A (en) * | 1988-05-06 | 1990-02-27 | General Electric Company | Method of making symmetrical blocking high voltage breakdown semiconductor device |
JPH0750700B2 (ja) * | 1989-06-27 | 1995-05-31 | 三菱電機株式会社 | 半導体チップの製造方法 |
US5041896A (en) * | 1989-07-06 | 1991-08-20 | General Electric Company | Symmetrical blocking high voltage semiconductor device and method of fabrication |
KR940016546A (ko) * | 1992-12-23 | 1994-07-23 | 프레데릭 얀 스미트 | 반도체 장치 및 제조방법 |
DE102004063180B4 (de) * | 2004-12-29 | 2020-02-06 | Robert Bosch Gmbh | Verfahren zum Herstellen von Halbleiterchips aus einem Siliziumwafer und damit hergestellte Halbleiterbauelemente |
US8163624B2 (en) * | 2008-07-30 | 2012-04-24 | Bowman Ronald R | Discrete semiconductor device and method of forming sealed trench junction termination |
US20100025809A1 (en) | 2008-07-30 | 2010-02-04 | Trion Technology, Inc. | Integrated Circuit and Method of Forming Sealed Trench Junction Termination |
US8174131B2 (en) * | 2009-05-27 | 2012-05-08 | Globalfoundries Inc. | Semiconductor device having a filled trench structure and methods for fabricating the same |
CN105453250A (zh) * | 2013-08-08 | 2016-03-30 | 夏普株式会社 | 半导体元件衬底及其制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3121279A (en) * | 1957-12-31 | 1964-02-18 | Philips Corp | Method of fastening connecting wires to electrical component parts |
US3414780A (en) * | 1966-01-06 | 1968-12-03 | Int Rectifier Corp | High voltage semiconductor device with electrical gradient-reducing groove |
IE34162B1 (en) * | 1969-05-05 | 1975-02-19 | Gen Electric | Junction-containing semiconductor pellets and wafers divisible into pellets |
US3608186A (en) * | 1969-10-30 | 1971-09-28 | Jearld L Hutson | Semiconductor device manufacture with junction passivation |
FR2100997B1 (sv) * | 1970-08-04 | 1973-12-21 | Silec Semi Conducteurs | |
JPS5137467Y2 (sv) * | 1971-08-07 | 1976-09-14 | ||
JPS5235500B2 (sv) * | 1972-06-29 | 1977-09-09 | ||
DE2306842C3 (de) * | 1973-02-12 | 1981-10-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen einer Vielzahl von Halbleiterelementen aus einer einzigen Halbleiterscheibe |
US3879839A (en) * | 1973-06-04 | 1975-04-29 | Ibm | Method of manufacturing multi-function LSI wafers |
JPS5631898B2 (sv) * | 1974-01-11 | 1981-07-24 | ||
JPS5719869B2 (sv) * | 1974-09-18 | 1982-04-24 |
-
1976
- 1976-07-24 DE DE2633324A patent/DE2633324C2/de not_active Expired
-
1977
- 1977-06-08 SE SE7706678A patent/SE7706678L/sv unknown
- 1977-06-08 SE SE7706667A patent/SE424118B/sv not_active IP Right Cessation
- 1977-06-27 IT IT25090/77A patent/IT1080969B/it active
- 1977-06-30 CH CH805577A patent/CH615046A5/xx not_active IP Right Cessation
- 1977-07-14 BR BR7704608A patent/BR7704608A/pt unknown
- 1977-07-18 FR FR7721860A patent/FR2359507A1/fr active Pending
- 1977-07-23 JP JP8791077A patent/JPS5315084A/ja active Pending
- 1977-07-25 GB GB31097/77A patent/GB1589733A/en not_active Expired
- 1977-07-25 US US05/818,964 patent/US4135291A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CH615046A5 (sv) | 1979-12-28 |
JPS5315084A (en) | 1978-02-10 |
DE2633324A1 (de) | 1978-01-26 |
SE7706678L (sv) | 1978-01-25 |
IT1080969B (it) | 1985-05-16 |
FR2359507A1 (fr) | 1978-02-17 |
DE2633324C2 (de) | 1983-09-15 |
BR7704608A (pt) | 1978-04-04 |
US4135291A (en) | 1979-01-23 |
GB1589733A (en) | 1981-05-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 7706678-5 Effective date: 19900522 |