FR2400262A1 - Dispositif pour microondes a l'etat solide et procedes pour leur fabrication - Google Patents

Dispositif pour microondes a l'etat solide et procedes pour leur fabrication

Info

Publication number
FR2400262A1
FR2400262A1 FR7823620A FR7823620A FR2400262A1 FR 2400262 A1 FR2400262 A1 FR 2400262A1 FR 7823620 A FR7823620 A FR 7823620A FR 7823620 A FR7823620 A FR 7823620A FR 2400262 A1 FR2400262 A1 FR 2400262A1
Authority
FR
France
Prior art keywords
manufacture
methods
state microwave
solid state
microwave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7823620A
Other languages
English (en)
Other versions
FR2400262B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Res Development
National Research Development Corp UK
Original Assignee
National Res Development
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Res Development, National Research Development Corp UK filed Critical National Res Development
Publication of FR2400262A1 publication Critical patent/FR2400262A1/fr
Application granted granted Critical
Publication of FR2400262B1 publication Critical patent/FR2400262B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Waveguides (AREA)

Abstract

L'invention concerne des dispositifs pour microondes à l'état solide et des procédés pour leur fabrication. Le dispositif comporte un substrat 1 à haute conductivité comprenant deux structures de mesa 2 et 3 pourvues chacune d'une fine couche épitaxiale 4 prise en sandwich entre une couche d'un matériau de contact métallisé 5 et le substrat 1. Application : fabrication de dispositifs à microondes à l'état solide.
FR7823620A 1977-08-10 1978-08-10 Dispositif pour microondes a l'etat solide et procedes pour leur fabrication Granted FR2400262A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3360977 1977-08-10

Publications (2)

Publication Number Publication Date
FR2400262A1 true FR2400262A1 (fr) 1979-03-09
FR2400262B1 FR2400262B1 (fr) 1985-04-12

Family

ID=10355145

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7823620A Granted FR2400262A1 (fr) 1977-08-10 1978-08-10 Dispositif pour microondes a l'etat solide et procedes pour leur fabrication

Country Status (4)

Country Link
US (1) US4238763A (fr)
JP (1) JPS5434782A (fr)
DE (1) DE2835132A1 (fr)
FR (1) FR2400262A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703392A (en) * 1982-07-06 1987-10-27 General Electric Company Microstrip line and method for fabrication
US4600663A (en) * 1982-07-06 1986-07-15 General Electric Company Microstrip line
JPS59117565A (ja) * 1982-12-24 1984-07-06 Nippon Paint Co Ltd 水性塗料組成物
GB2137412B (en) * 1983-03-15 1987-03-04 Standard Telephones Cables Ltd Semiconductor device
FR2601507B1 (fr) * 1986-07-09 1988-10-07 Thomson Csf Diode a transfert d'electrons, a regions balistiques periodiques
GB9414311D0 (en) * 1994-07-15 1994-09-07 Philips Electronics Uk Ltd A transferred electron effect device
US6171969B1 (en) * 1998-03-13 2001-01-09 Texas Instruments Incorporated Uniform dopant distribution for mesas of semiconductors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2208192A1 (fr) * 1972-11-24 1974-06-21 Philips Nv
FR2293069A1 (fr) * 1974-11-29 1976-06-25 Thomson Csf Dispositif hyperfrequence a effet gunn

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1161782A (en) * 1965-08-26 1969-08-20 Associated Semiconductor Mft Improvements in Semiconductor Devices.
JPS5144391B1 (fr) * 1967-04-19 1976-11-27
US3755752A (en) * 1971-04-26 1973-08-28 Raytheon Co Back-to-back semiconductor high frequency device
BE790652A (fr) * 1971-10-28 1973-02-15 Siemens Ag Composant a semi-conducteurs a connexions portantes
JPS492451U (fr) * 1972-04-08 1974-01-10
US4097890A (en) * 1976-06-23 1978-06-27 Hewlett-Packard Company Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2208192A1 (fr) * 1972-11-24 1974-06-21 Philips Nv
FR2293069A1 (fr) * 1974-11-29 1976-06-25 Thomson Csf Dispositif hyperfrequence a effet gunn

Also Published As

Publication number Publication date
FR2400262B1 (fr) 1985-04-12
JPS5434782A (en) 1979-03-14
DE2835132A1 (de) 1979-02-22
US4238763A (en) 1980-12-09

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Legal Events

Date Code Title Description
ST Notification of lapse