FR2368164A1 - Laser a semi-conducteur a double bande de contact - Google Patents

Laser a semi-conducteur a double bande de contact

Info

Publication number
FR2368164A1
FR2368164A1 FR7730867A FR7730867A FR2368164A1 FR 2368164 A1 FR2368164 A1 FR 2368164A1 FR 7730867 A FR7730867 A FR 7730867A FR 7730867 A FR7730867 A FR 7730867A FR 2368164 A1 FR2368164 A1 FR 2368164A1
Authority
FR
France
Prior art keywords
layer
gaas
produced
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7730867A
Other languages
English (en)
Other versions
FR2368164B1 (fr
Inventor
Colin Howard Ludlow Goodman
Paul Anthony Kirkby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of FR2368164A1 publication Critical patent/FR2368164A1/fr
Application granted granted Critical
Publication of FR2368164B1 publication Critical patent/FR2368164B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/0624—Controlling other output parameters than intensity or frequency controlling the near- or far field

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Laser à injection dans lequel le guidage latéral de l'énergie optique dans le plan de la couche active 12 est réalisé par concentration des porteurs à l'interface électrode 18-substrat 10 ou électrode 17-couche de contact 14. Selon l'invention, cette concentration est fournie par deux bandes de contact 16 parallèles, réalisées par exemple à travers un masque d'oxyde 15 entre une couche de métallisation 17 et une couche semi-conductrice 14. Cette dernière est, par exemple, en GaAS et recouvre une double hétérostructure constituée par les couches de GaA1As Il, 13 entourant la couche active de GaAs 13 sur un substrat de GaAs 10. Des bandes très étroites (2,5 mu m) et espacés de 5 mu m fournissent un guidage diélectrique du mode fondamental jusqu'aux fortes puissances et empêchent l'apparition du mode de premier harmonique responsable des non-linéarités et du bruit associé des lasers connus à bande unique. Application aux systèmes optiques de télécommunication et de télémesure.
FR7730867A 1976-10-13 1977-10-13 Laser a semi-conducteur a double bande de contact Granted FR2368164A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB42611/76A GB1557072A (en) 1976-10-13 1976-10-13 Stripe lears

Publications (2)

Publication Number Publication Date
FR2368164A1 true FR2368164A1 (fr) 1978-05-12
FR2368164B1 FR2368164B1 (fr) 1983-07-18

Family

ID=10425196

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7730867A Granted FR2368164A1 (fr) 1976-10-13 1977-10-13 Laser a semi-conducteur a double bande de contact

Country Status (5)

Country Link
US (1) US4190809A (fr)
AU (1) AU505834B2 (fr)
DE (1) DE2743817A1 (fr)
FR (1) FR2368164A1 (fr)
GB (1) GB1557072A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2432785A1 (fr) * 1978-08-04 1980-02-29 Bouley Jean Claude Laser a semiconducteur a faible courant de seuil
FR2475803A1 (fr) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu Diode emetrice de lumiere a hetero-jonction

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277762A (en) * 1978-01-13 1981-07-07 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
JPS60149030A (ja) * 1983-12-21 1985-08-06 Nec Corp 光スイツチ
CA1267716A (fr) * 1984-02-23 1990-04-10 Frederick W. Scholl Diode luminescente a emission laterale
US4609813A (en) * 1985-03-18 1986-09-02 International Business Machines Corporation Optical systems employing ovate light beams
US4694459A (en) * 1985-05-31 1987-09-15 Xerox Corporation Hybrid gain/index guided semiconductor lasers and array lasers
WO1987006016A1 (fr) * 1986-04-04 1987-10-08 Eastman Kodak Company Appareil d'exploration optique
US4751707A (en) * 1986-07-03 1988-06-14 Mcdonnell Douglas Corporation Laser diode array exhibiting transverse lasing
US4907234A (en) * 1989-05-04 1990-03-06 The United States Of America As Represented By The Secretary Of The Navy Monolithic laser diode structure for microwave generation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2117944A1 (fr) * 1970-12-09 1972-07-28 Western Electric Co
FR2192432A1 (fr) * 1972-07-13 1974-02-08 Radiotechnique Compelec
FR2285733A1 (fr) * 1974-09-17 1976-04-16 Northern Electric Co Laser a semi-conducteur a largeur de zone d'emission variable
FR2294563A1 (fr) * 1974-12-09 1976-07-09 Xerox Corp Laser a diode semi-conductrice et son procede de realisation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701044A (en) * 1970-06-29 1972-10-24 Bell Telephone Labor Inc Optical coupling of adjacent stripe contact geometry semiconductor lasers
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
JPS50159288A (fr) * 1974-06-11 1975-12-23

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2117944A1 (fr) * 1970-12-09 1972-07-28 Western Electric Co
FR2192432A1 (fr) * 1972-07-13 1974-02-08 Radiotechnique Compelec
FR2285733A1 (fr) * 1974-09-17 1976-04-16 Northern Electric Co Laser a semi-conducteur a largeur de zone d'emission variable
FR2294563A1 (fr) * 1974-12-09 1976-07-09 Xerox Corp Laser a diode semi-conductrice et son procede de realisation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2432785A1 (fr) * 1978-08-04 1980-02-29 Bouley Jean Claude Laser a semiconducteur a faible courant de seuil
FR2475803A1 (fr) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu Diode emetrice de lumiere a hetero-jonction

Also Published As

Publication number Publication date
US4190809A (en) 1980-02-26
DE2743817A1 (de) 1978-04-27
AU2963577A (en) 1979-04-26
FR2368164B1 (fr) 1983-07-18
GB1557072A (en) 1979-12-05
AU505834B2 (en) 1979-12-06

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Legal Events

Date Code Title Description
ST Notification of lapse