FR2294563A1 - Laser a diode semi-conductrice et son procede de realisation - Google Patents
Laser a diode semi-conductrice et son procede de realisationInfo
- Publication number
- FR2294563A1 FR2294563A1 FR7537639A FR7537639A FR2294563A1 FR 2294563 A1 FR2294563 A1 FR 2294563A1 FR 7537639 A FR7537639 A FR 7537639A FR 7537639 A FR7537639 A FR 7537639A FR 2294563 A1 FR2294563 A1 FR 2294563A1
- Authority
- FR
- France
- Prior art keywords
- diode laser
- semiconductor diode
- realization process
- realization
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53090074A | 1974-12-09 | 1974-12-09 | |
US05/530,898 US3984262A (en) | 1974-12-09 | 1974-12-09 | Method of making a substrate striped planar laser |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2294563A1 true FR2294563A1 (fr) | 1976-07-09 |
Family
ID=27063405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7537639A Withdrawn FR2294563A1 (fr) | 1974-12-09 | 1975-12-09 | Laser a diode semi-conductrice et son procede de realisation |
Country Status (6)
Country | Link |
---|---|
US (1) | US3984262A (fr) |
JP (1) | JPS5183487A (fr) |
DE (1) | DE2552870A1 (fr) |
FR (1) | FR2294563A1 (fr) |
NL (1) | NL7513927A (fr) |
SE (1) | SE7513563L (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2368164A1 (fr) * | 1976-10-13 | 1978-05-12 | Int Standard Electric Corp | Laser a semi-conducteur a double bande de contact |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4149175A (en) * | 1975-06-20 | 1979-04-10 | Matsushita Electric Industrial Co., Ltd. | Solidstate light-emitting device |
US4212021A (en) * | 1976-07-21 | 1980-07-08 | Hitachi, Ltd. | Light emitting devices |
US4132960A (en) * | 1977-03-28 | 1979-01-02 | Xerox Corporation | Single longitudinal mode gaas/gaalas double heterostructure laser |
US4169997A (en) * | 1977-05-06 | 1979-10-02 | Bell Telephone Laboratories, Incorporated | Lateral current confinement in junction lasers |
US4194933A (en) * | 1977-05-06 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method for fabricating junction lasers having lateral current confinement |
US4099999A (en) * | 1977-06-13 | 1978-07-11 | Xerox Corporation | Method of making etched-striped substrate planar laser |
US4190813A (en) * | 1977-12-28 | 1980-02-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
US4128440A (en) * | 1978-04-24 | 1978-12-05 | General Electric Company | Liquid phase epitaxial method of covering buried regions for devices |
CA1127282A (fr) * | 1978-05-22 | 1982-07-06 | Takashi Sugino | Laser a semiconducteur et methode de fabrication |
US4220960A (en) * | 1978-10-25 | 1980-09-02 | International Telephone And Telegraph Corporation | Light emitting diode structure |
DE3065856D1 (en) * | 1979-02-13 | 1984-01-19 | Fujitsu Ltd | A semiconductor light emitting device |
FR2465337A1 (fr) * | 1979-09-11 | 1981-03-20 | Landreau Jean | Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede |
US4249967A (en) * | 1979-12-26 | 1981-02-10 | International Telephone And Telegraph Corporation | Method of manufacturing a light-emitting diode by liquid phase epitaxy |
US4523961A (en) * | 1982-11-12 | 1985-06-18 | At&T Bell Laboratories | Method of improving current confinement in semiconductor lasers by inert ion bombardment |
NL8401172A (nl) * | 1984-04-12 | 1985-11-01 | Philips Nv | Halfgeleiderlaser. |
JPH07112091B2 (ja) * | 1986-03-06 | 1995-11-29 | 株式会社東芝 | 埋め込み型半導体レ−ザの製造方法 |
JPH03237784A (ja) * | 1990-02-15 | 1991-10-23 | Omron Corp | 半導体素子およびその製造方法 |
US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
JP5028640B2 (ja) * | 2004-03-26 | 2012-09-19 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
GB2558308B (en) * | 2016-12-30 | 2022-01-19 | Lumentum Tech Uk Limited | Electrical isolation in photonic integrated circuits |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3495140A (en) * | 1967-10-12 | 1970-02-10 | Rca Corp | Light-emitting diodes and method of making same |
IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
US3838359A (en) * | 1973-11-23 | 1974-09-24 | Bell Telephone Labor Inc | Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode |
-
1974
- 1974-12-09 US US05/530,898 patent/US3984262A/en not_active Expired - Lifetime
-
1975
- 1975-11-25 DE DE2552870A patent/DE2552870A1/de active Pending
- 1975-11-28 NL NL7513927A patent/NL7513927A/xx not_active Application Discontinuation
- 1975-12-02 SE SE7513563A patent/SE7513563L/xx unknown
- 1975-12-02 JP JP50143817A patent/JPS5183487A/ja active Pending
- 1975-12-09 FR FR7537639A patent/FR2294563A1/fr not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
NV362/73 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2368164A1 (fr) * | 1976-10-13 | 1978-05-12 | Int Standard Electric Corp | Laser a semi-conducteur a double bande de contact |
Also Published As
Publication number | Publication date |
---|---|
JPS5183487A (fr) | 1976-07-22 |
SE7513563L (sv) | 1976-06-10 |
NL7513927A (nl) | 1976-06-11 |
US3984262A (en) | 1976-10-05 |
DE2552870A1 (de) | 1976-06-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |