DE1439249A1 - Flaechentransistor - Google Patents
FlaechentransistorInfo
- Publication number
- DE1439249A1 DE1439249A1 DE19631439249 DE1439249A DE1439249A1 DE 1439249 A1 DE1439249 A1 DE 1439249A1 DE 19631439249 DE19631439249 DE 19631439249 DE 1439249 A DE1439249 A DE 1439249A DE 1439249 A1 DE1439249 A1 DE 1439249A1
- Authority
- DE
- Germany
- Prior art keywords
- collector
- doping
- layer
- base
- wide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 230000001174 ascending effect Effects 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000003389 potentiating effect Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 30
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000005275 alloying Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0077593 | 1962-01-18 | ||
| DES0085779 | 1963-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1439249A1 true DE1439249A1 (de) | 1968-12-19 |
Family
ID=25996732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19631439249 Pending DE1439249A1 (de) | 1962-01-18 | 1963-06-21 | Flaechentransistor |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0786458A2 (en) | 1990-04-24 | 1997-07-30 | Biota Scientific Management Pty. Ltd. | Derivatives and analogues of 2-deoxy-2,3-didehydro-n-acetyl neuraminic acid and their use as antiviral agents |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3319138A (en) * | 1962-11-27 | 1967-05-09 | Texas Instruments Inc | Fast switching high current avalanche transistor |
| US3383571A (en) * | 1965-07-19 | 1968-05-14 | Rca Corp | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL122784C (US06168776-20010102-C00041.png) * | 1959-04-15 | |||
| US3028529A (en) * | 1959-08-26 | 1962-04-03 | Bendix Corp | Semiconductor diode |
-
0
- NL NL287642D patent/NL287642A/xx unknown
- BE BE627295D patent/BE627295A/xx unknown
-
1963
- 1963-01-15 US US251621A patent/US3220894A/en not_active Expired - Lifetime
- 1963-01-18 CH CH65563A patent/CH396227A/de unknown
- 1963-06-21 DE DE19631439249 patent/DE1439249A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0786458A2 (en) | 1990-04-24 | 1997-07-30 | Biota Scientific Management Pty. Ltd. | Derivatives and analogues of 2-deoxy-2,3-didehydro-n-acetyl neuraminic acid and their use as antiviral agents |
Also Published As
| Publication number | Publication date |
|---|---|
| CH396227A (de) | 1965-07-31 |
| US3220894A (en) | 1965-11-30 |
| NL287642A (US06168776-20010102-C00041.png) | |
| BE627295A (US06168776-20010102-C00041.png) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10250575B4 (de) | IGBT mit monolithisch integrierter antiparalleler Diode | |
| DE2757762C2 (de) | Monolithische Kombination zweier komplementärer Bipolartransistoren | |
| DE102018203693A1 (de) | Halbleitervorrichtung | |
| DE102008051166A1 (de) | Halbleitervorrichtung mit einer Diode | |
| DE102015100340A1 (de) | Bipolare halbleitervorrichtung und herstellungsverfahren dafür | |
| DE102019202117A1 (de) | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung | |
| EP0003130B1 (de) | Halbleiter-Diode mit 3-Schichten-Struktur und ihre Verwendung | |
| EP0760528A2 (de) | Halbleiterbauelement auf Siliciumbasis mit hochsperrendem Randabschluss | |
| DE112018001627B4 (de) | Halbleitervorrichtung | |
| DE2712533A1 (de) | Mittels einer steuerelektrode gesteuertes halbleiterbauelement, insbesondere thyristor | |
| DE102021110549A1 (de) | Halbleitervorrichtung | |
| DE2822403A1 (de) | Integrierte injektions-logik-vorrichtung | |
| DE102016224697A1 (de) | Schottky-Diode und Verfahren zur Herstellung derselben | |
| DE1259469B (de) | Verfahren zur Herstellung von inversionsschichtfreien Halbleiteruebergaengen | |
| DE102018200916A1 (de) | Halbleiterschaltelement und Verfahren zum Herstellen desselben | |
| DE102019130376A1 (de) | Siliziumcarbid-vorrichtung mit schottky-kontakt | |
| DE3733100C2 (US06168776-20010102-C00041.png) | ||
| DE2515457C3 (de) | Differenzverstärker | |
| DE1439249A1 (de) | Flaechentransistor | |
| DE69633513T2 (de) | Vakaktor mit elektrostatischer barriere | |
| EP0001433B1 (de) | Zweiweg-Halbleiterschalter (Triac) | |
| DE112017008011T5 (de) | Halbleitervorrichtung | |
| DE112014006158T5 (de) | Leistungshalbleitervorrichtung | |
| DE2458735C2 (de) | Transistor mit einem hohen Stromverstärkungsfaktor bei kleinen Kollektorströmen | |
| DE3854098T2 (de) | Feldeffekttransistor. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 |