DE1414858A1 - Festkoerperschaltung mit eigener Stromversorgung - Google Patents
Festkoerperschaltung mit eigener StromversorgungInfo
- Publication number
- DE1414858A1 DE1414858A1 DE19611414858 DE1414858A DE1414858A1 DE 1414858 A1 DE1414858 A1 DE 1414858A1 DE 19611414858 DE19611414858 DE 19611414858 DE 1414858 A DE1414858 A DE 1414858A DE 1414858 A1 DE1414858 A1 DE 1414858A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- solid
- circuit according
- zones
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 92
- 239000000463 material Substances 0.000 claims description 27
- 230000008878 coupling Effects 0.000 claims description 15
- 238000010168 coupling process Methods 0.000 claims description 15
- 238000005859 coupling reaction Methods 0.000 claims description 15
- 230000001939 inductive effect Effects 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000000356 contaminant Substances 0.000 claims description 2
- 239000011253 protective coating Substances 0.000 claims description 2
- 230000002285 radioactive effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 10
- 239000011241 protective layer Substances 0.000 claims 2
- 239000007822 coupling agent Substances 0.000 claims 1
- 210000003746 feather Anatomy 0.000 claims 1
- 230000005294 ferromagnetic effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241001174911 Iasis Species 0.000 description 1
- 101100081961 Mus musculus Otoa gene Proteins 0.000 description 1
- 240000004760 Pimpinella anisum Species 0.000 description 1
- 206010035148 Plague Diseases 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 241001233037 catfish Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
- H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
- H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/311—Design considerations for internal polarisation in bipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/291—Applications
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Bipolar Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB35316/60A GB995727A (en) | 1960-10-14 | 1960-10-14 | Improvements in or relating to semiconductor devices |
| GB35315/60A GB998165A (en) | 1960-10-14 | 1960-10-14 | Improvements in or relating to electrical signal translating circuits |
| GB2908161 | 1961-08-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1414858A1 true DE1414858A1 (de) | 1968-10-10 |
Family
ID=27258789
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19611414858 Pending DE1414858A1 (de) | 1960-10-14 | 1961-10-10 | Festkoerperschaltung mit eigener Stromversorgung |
| DEJ20636A Pending DE1236077B (de) | 1960-10-14 | 1961-10-10 | Halbleiter-Festkoerperschaltung mit eigener Stromversorgung |
| DEJ22192A Pending DE1279854B (de) | 1960-10-14 | 1962-08-01 | Halbleiterkoerper fuer integrierte Halbleiterschaltungen |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ20636A Pending DE1236077B (de) | 1960-10-14 | 1961-10-10 | Halbleiter-Festkoerperschaltung mit eigener Stromversorgung |
| DEJ22192A Pending DE1279854B (de) | 1960-10-14 | 1962-08-01 | Halbleiterkoerper fuer integrierte Halbleiterschaltungen |
Country Status (7)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3412293A (en) * | 1965-12-13 | 1968-11-19 | Honeywell Inc | Burner control apparatus with photodarlington flame detector |
| CH516874A (de) * | 1970-05-26 | 1971-12-15 | Bbc Brown Boveri & Cie | Halbleiterbauelement |
| US3911269A (en) * | 1971-03-20 | 1975-10-07 | Philips Corp | Circuit arrangement having at least one circuit element which is energised by means of radiation and semiconductor device suitable for use in such a circuit arrangement |
| DE2211384A1 (de) * | 1971-03-20 | 1972-11-30 | Philips Nv | Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung |
| US4695120A (en) * | 1985-09-26 | 1987-09-22 | The United States Of America As Represented By The Secretary Of The Army | Optic-coupled integrated circuits |
| FR2629639A1 (en) * | 1988-04-01 | 1989-10-06 | Balkanski Minko | Self-powered integrated component of the junction type and method for its manufacture |
| US5196690A (en) * | 1991-06-18 | 1993-03-23 | The United States Of America As Represented By The Secretary Of The Navy | Optically powered photomultiplier tube |
| US7082019B2 (en) * | 2002-11-04 | 2006-07-25 | The Boeing Company | Method and apparatus to protect solar cells from electrostatic discharge damage |
| CN105047517B (zh) * | 2015-07-08 | 2017-11-14 | 武汉京邦科技有限公司 | 一种数字光电倍增器件 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2824977A (en) * | 1954-12-24 | 1958-02-25 | Rca Corp | Semiconductor devices and systems |
| DE1075746B (de) * | 1955-12-02 | 1960-02-18 | Texas Instruments Incorporated, Dallas, Tex. (V. St. A.) | Vorrichtung zur Temperaturkompensation eines Flächentransistors |
| US2994834A (en) * | 1956-02-29 | 1961-08-01 | Baldwin Piano Co | Transistor amplifiers |
| US2944165A (en) * | 1956-11-15 | 1960-07-05 | Otmar M Stuetzer | Semionductive device powered by light |
| US3048797A (en) * | 1957-04-30 | 1962-08-07 | Rca Corp | Semiconductor modulator |
| FR1256116A (fr) * | 1959-02-06 | 1961-03-17 | Texas Instruments Inc | Nouveaux circuits électroniques miniatures et procédés pour leur fabrication |
| NL250955A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1959-08-05 | |||
| US3050684A (en) * | 1959-10-05 | 1962-08-21 | Nuclcar Corp Of America | Self-powered semiconductor oscillators |
| US3134905A (en) * | 1961-02-03 | 1964-05-26 | Bell Telephone Labor Inc | Photosensitive semiconductor junction device |
-
0
- NL NL281945D patent/NL281945A/xx unknown
- NL NL270244D patent/NL270244A/xx unknown
- NL NL270243D patent/NL270243A/xx unknown
- BE BE621278D patent/BE621278A/xx unknown
-
1960
- 1960-10-14 GB GB35316/60A patent/GB995727A/en not_active Expired
- 1960-10-14 GB GB35315/60A patent/GB998165A/en not_active Expired
-
1961
- 1961-10-10 DE DE19611414858 patent/DE1414858A1/de active Pending
- 1961-10-10 DE DEJ20636A patent/DE1236077B/de active Pending
- 1961-10-12 CH CH1183961A patent/CH406431A/de unknown
- 1961-10-12 FR FR875780A patent/FR1308083A/fr not_active Expired
- 1961-10-12 US US144649A patent/US3280333A/en not_active Expired - Lifetime
- 1961-10-13 CH CH1190561A patent/CH406432A/de unknown
-
1962
- 1962-08-01 DE DEJ22192A patent/DE1279854B/de active Pending
- 1962-08-06 CH CH934462A patent/CH415857A/de unknown
- 1962-08-08 FR FR906471A patent/FR82164E/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3280333A (en) | 1966-10-18 |
| CH415857A (de) | 1966-06-30 |
| DE1279854B (de) | 1968-10-10 |
| NL281945A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1900-01-01 |
| DE1236077B (de) | 1967-03-09 |
| NL270244A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1900-01-01 |
| GB995727A (en) | 1965-06-23 |
| FR82164E (fr) | 1964-01-04 |
| FR1308083A (fr) | 1962-11-03 |
| NL270243A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1900-01-01 |
| GB998165A (en) | 1965-07-14 |
| CH406432A (de) | 1966-01-31 |
| CH406431A (de) | 1966-01-31 |
| BE621278A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1900-01-01 |
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