DE1299087B - Feldeffekt-Fototransistor - Google Patents

Feldeffekt-Fototransistor

Info

Publication number
DE1299087B
DE1299087B DES103725A DES0103725A DE1299087B DE 1299087 B DE1299087 B DE 1299087B DE S103725 A DES103725 A DE S103725A DE S0103725 A DES0103725 A DE S0103725A DE 1299087 B DE1299087 B DE 1299087B
Authority
DE
Germany
Prior art keywords
field effect
layer
effect phototransistor
electrically conductive
semiconductor crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES103725A
Other languages
German (de)
English (en)
Inventor
Dr Manfred
Zerbst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES103725A priority Critical patent/DE1299087B/de
Priority to NL6703297A priority patent/NL6703297A/xx
Priority to FR105515A priority patent/FR1522025A/fr
Priority to AT428867A priority patent/AT270766B/de
Priority to GB21463/67A priority patent/GB1167063A/en
Priority to CH650367A priority patent/CH462338A/de
Priority to SE06572/67A priority patent/SE329449B/xx
Publication of DE1299087B publication Critical patent/DE1299087B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DES103725A 1966-05-10 1966-05-10 Feldeffekt-Fototransistor Pending DE1299087B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DES103725A DE1299087B (de) 1966-05-10 1966-05-10 Feldeffekt-Fototransistor
NL6703297A NL6703297A (https=) 1966-05-10 1967-02-28
FR105515A FR1522025A (fr) 1966-05-10 1967-05-08 Dispositif comportant un composant à semi-conducteurs, photosensible
AT428867A AT270766B (de) 1966-05-10 1967-05-08 Photoelektronisches Bauelement
GB21463/67A GB1167063A (en) 1966-05-10 1967-05-09 Improvements in or relating to Photoelectric Semiconductor Devices.
CH650367A CH462338A (de) 1966-05-10 1967-05-09 Anordnung mit einem lichtempfindlichen Halbleiter-Bauelement und Verfahren zum Herstellen einer derartigen Anordnung
SE06572/67A SE329449B (https=) 1966-05-10 1967-05-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES103725A DE1299087B (de) 1966-05-10 1966-05-10 Feldeffekt-Fototransistor

Publications (1)

Publication Number Publication Date
DE1299087B true DE1299087B (de) 1969-07-10

Family

ID=7525384

Family Applications (1)

Application Number Title Priority Date Filing Date
DES103725A Pending DE1299087B (de) 1966-05-10 1966-05-10 Feldeffekt-Fototransistor

Country Status (6)

Country Link
AT (1) AT270766B (https=)
CH (1) CH462338A (https=)
DE (1) DE1299087B (https=)
GB (1) GB1167063A (https=)
NL (1) NL6703297A (https=)
SE (1) SE329449B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2601956A1 (de) * 1975-01-24 1976-07-29 Hitachi Ltd Photocoupler
WO2005114737A3 (de) * 2004-05-17 2006-08-10 Rohde & Schwarz BELEUCHTBARES GaAs-SCHALTBAUTEIL MIT TRANSPARENTEM GEHÄUSE UND MIKROWELLENSCHALTUNG HIERMIT
US8975784B2 (en) 2008-04-09 2015-03-10 Thales Method for managing an electrical network

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2903587C2 (de) * 1979-01-31 1983-03-24 Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt Verfahren zum Herstellen von opto-elektronischen Koppelbauelementen
JPH0691296B2 (ja) * 1987-03-31 1994-11-14 三菱電機株式会社 半導体レ−ザの組立方法
DE69614583T2 (de) * 1995-01-23 2002-06-27 National Institute Of Advanced Industrial Science And Technology, Independent Administrative Institution Lichtempfängliche Vorrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE666241A (https=) * 1964-07-01 1966-01-03
DE1214806B (de) * 1959-12-18 1966-04-21 Ibm Photoempfindlicher Feld-Effekt-Unipolar-transistor und seine Betriebsschaltung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1214806B (de) * 1959-12-18 1966-04-21 Ibm Photoempfindlicher Feld-Effekt-Unipolar-transistor und seine Betriebsschaltung
BE666241A (https=) * 1964-07-01 1966-01-03

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2601956A1 (de) * 1975-01-24 1976-07-29 Hitachi Ltd Photocoupler
WO2005114737A3 (de) * 2004-05-17 2006-08-10 Rohde & Schwarz BELEUCHTBARES GaAs-SCHALTBAUTEIL MIT TRANSPARENTEM GEHÄUSE UND MIKROWELLENSCHALTUNG HIERMIT
US8796801B2 (en) 2004-05-17 2014-08-05 Rohde & Schwarz Gmbh & Co. Kg Illuminable GaAs switching component with transparent housing and associated microwave circuit
US8975784B2 (en) 2008-04-09 2015-03-10 Thales Method for managing an electrical network

Also Published As

Publication number Publication date
GB1167063A (en) 1969-10-15
AT270766B (de) 1969-05-12
SE329449B (https=) 1970-10-12
NL6703297A (https=) 1967-11-13
CH462338A (de) 1968-09-15

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