AT270766B - Photoelektronisches Bauelement - Google Patents
Photoelektronisches BauelementInfo
- Publication number
- AT270766B AT270766B AT428867A AT428867A AT270766B AT 270766 B AT270766 B AT 270766B AT 428867 A AT428867 A AT 428867A AT 428867 A AT428867 A AT 428867A AT 270766 B AT270766 B AT 270766B
- Authority
- AT
- Austria
- Prior art keywords
- photoelectronic component
- photoelectronic
- component
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES103725A DE1299087B (de) | 1966-05-10 | 1966-05-10 | Feldeffekt-Fototransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT270766B true AT270766B (de) | 1969-05-12 |
Family
ID=7525384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT428867A AT270766B (de) | 1966-05-10 | 1967-05-08 | Photoelektronisches Bauelement |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT270766B (de) |
| CH (1) | CH462338A (de) |
| DE (1) | DE1299087B (de) |
| GB (1) | GB1167063A (de) |
| NL (1) | NL6703297A (de) |
| SE (1) | SE329449B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3810899A1 (de) * | 1987-03-31 | 1988-10-27 | Mitsubishi Electric Corp | Verfahren zur herstellung eines halbleiterlasers |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5642148B2 (de) * | 1975-01-24 | 1981-10-02 | ||
| DE2903587C2 (de) * | 1979-01-31 | 1983-03-24 | Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt | Verfahren zum Herstellen von opto-elektronischen Koppelbauelementen |
| EP0723302B1 (de) * | 1995-01-23 | 2001-08-22 | AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY MINISTRY OF INTERNATIONAL TRADE & INDUSTRY | Lichtempfängliche Vorrichtung |
| DE102004024368A1 (de) | 2004-05-17 | 2005-12-15 | Rohde & Schwarz Gmbh & Co. Kg | Beleuchtbares GaAs-Schaltbauteil mit transparentem Gehäuse und Mikrowellenschaltung hiermit |
| FR2930084B1 (fr) | 2008-04-09 | 2012-06-08 | Thales Sa | Procede de gestion d'un reseau electrique |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3051840A (en) * | 1959-12-18 | 1962-08-28 | Ibm | Photosensitive field effect unit |
| NL6407445A (de) * | 1964-07-01 | 1966-01-03 |
-
1966
- 1966-05-10 DE DES103725A patent/DE1299087B/de active Pending
-
1967
- 1967-02-28 NL NL6703297A patent/NL6703297A/xx unknown
- 1967-05-08 AT AT428867A patent/AT270766B/de active
- 1967-05-09 CH CH650367A patent/CH462338A/de unknown
- 1967-05-09 GB GB21463/67A patent/GB1167063A/en not_active Expired
- 1967-05-10 SE SE06572/67A patent/SE329449B/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3810899A1 (de) * | 1987-03-31 | 1988-10-27 | Mitsubishi Electric Corp | Verfahren zur herstellung eines halbleiterlasers |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1167063A (en) | 1969-10-15 |
| CH462338A (de) | 1968-09-15 |
| SE329449B (de) | 1970-10-12 |
| NL6703297A (de) | 1967-11-13 |
| DE1299087B (de) | 1969-07-10 |
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