GB1167063A - Improvements in or relating to Photoelectric Semiconductor Devices. - Google Patents

Improvements in or relating to Photoelectric Semiconductor Devices.

Info

Publication number
GB1167063A
GB1167063A GB21463/67A GB2146367A GB1167063A GB 1167063 A GB1167063 A GB 1167063A GB 21463/67 A GB21463/67 A GB 21463/67A GB 2146367 A GB2146367 A GB 2146367A GB 1167063 A GB1167063 A GB 1167063A
Authority
GB
United Kingdom
Prior art keywords
transistor
silicon
oxide
gallium arsenide
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21463/67A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1167063A publication Critical patent/GB1167063A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
GB21463/67A 1966-05-10 1967-05-09 Improvements in or relating to Photoelectric Semiconductor Devices. Expired GB1167063A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES103725A DE1299087B (de) 1966-05-10 1966-05-10 Feldeffekt-Fototransistor

Publications (1)

Publication Number Publication Date
GB1167063A true GB1167063A (en) 1969-10-15

Family

ID=7525384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21463/67A Expired GB1167063A (en) 1966-05-10 1967-05-09 Improvements in or relating to Photoelectric Semiconductor Devices.

Country Status (6)

Country Link
AT (1) AT270766B (https=)
CH (1) CH462338A (https=)
DE (1) DE1299087B (https=)
GB (1) GB1167063A (https=)
NL (1) NL6703297A (https=)
SE (1) SE329449B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661328A (en) * 1995-01-23 1997-08-26 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Photo-receiving device, and method of fabricating a photo-device
US8796801B2 (en) 2004-05-17 2014-08-05 Rohde & Schwarz Gmbh & Co. Kg Illuminable GaAs switching component with transparent housing and associated microwave circuit

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642148B2 (https=) * 1975-01-24 1981-10-02
DE2903587C2 (de) * 1979-01-31 1983-03-24 Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt Verfahren zum Herstellen von opto-elektronischen Koppelbauelementen
JPH0691296B2 (ja) * 1987-03-31 1994-11-14 三菱電機株式会社 半導体レ−ザの組立方法
FR2930084B1 (fr) 2008-04-09 2012-06-08 Thales Sa Procede de gestion d'un reseau electrique

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
NL6407445A (https=) * 1964-07-01 1966-01-03

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661328A (en) * 1995-01-23 1997-08-26 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Photo-receiving device, and method of fabricating a photo-device
US5895227A (en) * 1995-01-23 1999-04-20 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Method of fabricating a photo-device
US5945720A (en) * 1995-01-23 1999-08-31 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Photo-receiving device with light guide
US8796801B2 (en) 2004-05-17 2014-08-05 Rohde & Schwarz Gmbh & Co. Kg Illuminable GaAs switching component with transparent housing and associated microwave circuit

Also Published As

Publication number Publication date
AT270766B (de) 1969-05-12
DE1299087B (de) 1969-07-10
SE329449B (https=) 1970-10-12
NL6703297A (https=) 1967-11-13
CH462338A (de) 1968-09-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees