GB1193228A - Integrated Electro-Optical Structures - Google Patents

Integrated Electro-Optical Structures

Info

Publication number
GB1193228A
GB1193228A GB33680/68A GB3368068A GB1193228A GB 1193228 A GB1193228 A GB 1193228A GB 33680/68 A GB33680/68 A GB 33680/68A GB 3368068 A GB3368068 A GB 3368068A GB 1193228 A GB1193228 A GB 1193228A
Authority
GB
United Kingdom
Prior art keywords
july
reverse biased
zones
optical structures
fresnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33680/68A
Inventor
Kurt Lehovec
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB1193228A publication Critical patent/GB1193228A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

1,193,228. Light modulators. K. LEHOVEC. 15 July, 1968 [13 July, 1967], No. 33680/68. Heading H4F. [Also in Divisions C4 and H1] A light modulator in the form of a diffractive Fresnel optical system is formed integral with a photosensitive element (Fig. 9). The latter is formed within a lead selenide film 118 or is the junction between an epitaxial gallium arsenide film 118 and the 10 ohm. cm. arsenic doped germanium body 100. A series of opaque zones 109-115 formed of vapour deposited cadmiumindium alloy alloyed to the germanium to form rectifying contacts constitute the Fresnel system. Radiation passing through this zone plate is modulated by the Franz-Keldysh effect if the zones are reverse biased with respect to a circumferential electrode of gold antimony or are alternately forward and reverse biased.
GB33680/68A 1967-07-13 1968-07-15 Integrated Electro-Optical Structures Expired GB1193228A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65324567A 1967-07-13 1967-07-13

Publications (1)

Publication Number Publication Date
GB1193228A true GB1193228A (en) 1970-05-28

Family

ID=24620064

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33680/68A Expired GB1193228A (en) 1967-07-13 1968-07-15 Integrated Electro-Optical Structures

Country Status (6)

Country Link
US (1) US3569997A (en)
DE (1) DE1764639B1 (en)
FR (1) FR1574423A (en)
GB (1) GB1193228A (en)
NL (1) NL6809931A (en)
SE (1) SE341225B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2476917A1 (en) * 1980-02-25 1981-08-28 Elektronikcentralen SOLAR CELL, METHODS FOR CARRYING OUT THE SAME, AND PANEL OR BATTERY COMPRISING SUCH CELLS
FR2522880A1 (en) * 1982-03-03 1983-09-09 Energy Conversion Devices Inc PHOTOVOLTAIC DEVICE COMPRISING MEANS FOR DIRECTING INCIDENT RADIATION FOR TOTAL INTERNAL REFLECTION
FR2536911A1 (en) * 1982-11-30 1984-06-01 Western Electric Co PHOTOSENSOR
GB2179203A (en) * 1985-07-16 1987-02-25 Mitsubishi Electric Corp Semiconductor light emission device
US4909626A (en) * 1986-07-28 1990-03-20 The General Electric Company, P.L.C. Electrically-controllable thin film Fresnel zone device
US5181220A (en) * 1985-07-16 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting light concentration device
DE4239012A1 (en) * 1991-11-19 1993-05-27 Yamatake Honeywell Co Ltd
US6437762B1 (en) 1995-01-11 2002-08-20 William A. Birdwell Dynamic diffractive optical transform
DE19816309B4 (en) * 1997-04-14 2008-04-03 CiS Institut für Mikrosensorik gGmbH Method for direct mounting of silicon sensors and sensors manufactured thereafter

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763372A (en) * 1967-07-13 1973-10-02 Inventors & Investors Inc Zone plate optics monolithically integrated with photoelectric elements
US3668404A (en) * 1970-09-29 1972-06-06 Kurt Lehovec Electro-optical microtransducer comprising diffractive element monolithically integrated with photoelectric device
JPS4824480U (en) * 1971-07-17 1973-03-22
US3831031A (en) * 1972-09-15 1974-08-20 Raytheon Co Zone plate imaging system
US3801785A (en) * 1972-11-01 1974-04-02 Raytheon Co Spatially modulated imaging system
US3902240A (en) * 1972-11-22 1975-09-02 Us Army Integrated cathode and channel plate multiplier
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
US4539482A (en) * 1980-10-09 1985-09-03 Canon Kabushiki Kaisha Reading apparatus
US4878735A (en) * 1988-01-15 1989-11-07 Lookingglass Technology, Inc. Optical imaging system using lenticular tone-plate elements
US5360973A (en) * 1990-02-22 1994-11-01 Innova Laboratories, Inc. Millimeter wave beam deflector
DE19515369B4 (en) * 1995-05-02 2007-05-24 Colour Control Farbmeßtechnik GmbH Spectrally selective photodiode with diffractive structures
DE10352741B4 (en) * 2003-11-12 2012-08-16 Austriamicrosystems Ag Radiation-detecting optoelectronic component, process for its production and use
US7109051B2 (en) * 2004-11-15 2006-09-19 Freescale Semiconductor, Inc. Method of integrating optical devices and electronic devices on an integrated circuit
DE102007023563B4 (en) * 2007-04-16 2014-09-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrated sensor element with plasmon-polariton-resonance effect, associated integrated color sensor and associated manufacturing process
DE102008011793A1 (en) * 2008-02-29 2009-09-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. multispectral sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1561149A (en) * 1923-02-09 1925-11-10 Frederick Franklin Burya Light-projecting lens
US2148314A (en) * 1937-05-19 1939-02-21 Gen Electric Electric lamp
US2921184A (en) * 1950-02-09 1960-01-12 Fruengel Frank System for signaling by light impulses
US3189907A (en) * 1961-08-11 1965-06-15 Lylnan F Van Buskirk Zone plate radio transmission system
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light
DE1264513C2 (en) * 1963-11-29 1973-01-25 Texas Instruments Inc REFERENCE POTENTIAL FREE DC DIFFERENCE AMPLIFIER
US3302051A (en) * 1963-12-12 1967-01-31 Gen Electric Semiconductive alloy light source having improved optical transmissivity
US3443140A (en) * 1965-04-06 1969-05-06 Gen Electric Light emitting semiconductor devices of improved transmission characteristics
US3401266A (en) * 1965-09-20 1968-09-10 Bell Telephone Labor Inc Logic arrangement employing light generating diodes, photosensitive diodes and reflecting grating means
US3462605A (en) * 1965-09-22 1969-08-19 Gen Electric Semiconductor light-emitter and combination light-emitter-photocell wherein the reflector of the light-emitter is comprised of a material different from that of the light-emitter
US3449583A (en) * 1966-02-24 1969-06-10 Texas Instruments Inc Photoconductive electro-optic image intensifier utilizing polarized light

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2476917A1 (en) * 1980-02-25 1981-08-28 Elektronikcentralen SOLAR CELL, METHODS FOR CARRYING OUT THE SAME, AND PANEL OR BATTERY COMPRISING SUCH CELLS
FR2522880A1 (en) * 1982-03-03 1983-09-09 Energy Conversion Devices Inc PHOTOVOLTAIC DEVICE COMPRISING MEANS FOR DIRECTING INCIDENT RADIATION FOR TOTAL INTERNAL REFLECTION
FR2536911A1 (en) * 1982-11-30 1984-06-01 Western Electric Co PHOTOSENSOR
GB2131229A (en) * 1982-11-30 1984-06-13 Western Electric Co Photodetector
GB2179203B (en) * 1985-07-16 1990-02-14 Mitsubishi Electric Corp A semiconductor light emission device
GB2217911A (en) * 1985-07-16 1989-11-01 Mitsubishi Electric Corp A semiconductor light emission device
GB2179203A (en) * 1985-07-16 1987-02-25 Mitsubishi Electric Corp Semiconductor light emission device
GB2217911B (en) * 1985-07-16 1990-02-28 Mitsubishi Electric Corp A semiconductor light emission device
US5038354A (en) * 1985-07-16 1991-08-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting, light concentrating device
US5181220A (en) * 1985-07-16 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting light concentration device
US4909626A (en) * 1986-07-28 1990-03-20 The General Electric Company, P.L.C. Electrically-controllable thin film Fresnel zone device
DE4239012A1 (en) * 1991-11-19 1993-05-27 Yamatake Honeywell Co Ltd
US6437762B1 (en) 1995-01-11 2002-08-20 William A. Birdwell Dynamic diffractive optical transform
US7009581B2 (en) 1995-01-11 2006-03-07 Birdwell William A Dynamic diffractive optical transform
DE19816309B4 (en) * 1997-04-14 2008-04-03 CiS Institut für Mikrosensorik gGmbH Method for direct mounting of silicon sensors and sensors manufactured thereafter

Also Published As

Publication number Publication date
US3569997A (en) 1971-03-09
SE341225B (en) 1971-12-20
NL6809931A (en) 1969-01-15
DE1764639B1 (en) 1971-02-18
FR1574423A (en) 1969-07-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PLNP Patent lapsed through nonpayment of renewal fees