GB1179640A - Solid State Display Device - Google Patents
Solid State Display DeviceInfo
- Publication number
- GB1179640A GB1179640A GB4293067A GB4293067A GB1179640A GB 1179640 A GB1179640 A GB 1179640A GB 4293067 A GB4293067 A GB 4293067A GB 4293067 A GB4293067 A GB 4293067A GB 1179640 A GB1179640 A GB 1179640A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- instanced
- microns
- insulating
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Abstract
1,179,640. Electroluminescence. STANDARD TELEPHONES & CABLES Ltd. 21 Sept., 1967, No. 42930/67. Heading C4S. [Also in Division H1] A solid state display device (for use as an image converter or retainer for example) includes an array of two terminal active elements formed by a multilayer sheet of material having one of the structures n-si(i.e. semi-insulating)-p (layers 1, 2 and 3, respectively), n-si-p n-p-si-p, or n-p-si-n-p, which structure comprises both photo-conductive and electroluminescent functions, the semi-insulating layer being divided into an array of discrete elemental areas. Materials instanced are GaAs, GaAs x P (1-x) (x = 0À7 for instance) and the semi-insulating layer dopants may be Cr, Ni, Co or Fe for example. The n- or p-type materials may be deposited by epitaxy and the si region made in n-type material by diffusion of an impurity. Grid electrode K may be pro. vided and also silica layer 6. The device may be switched from a high to low impedance by an applied voltage, the required voltage depending on the intensity of incident light (e.g. infra red). A pattern is retained in the device while the voltage bias is maintained, an A.C. input being required for time varying images. Input and output radiations of 1À4 and 0À7 microns respectively are instanced. A device with an iron doped semi-insulating region cooled to liquid nitrogen temperatures has a response beyond 2 microns and 10 microns is intanced. The combination with an optical system is instanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4293067A GB1179640A (en) | 1967-09-21 | 1967-09-21 | Solid State Display Device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4293067A GB1179640A (en) | 1967-09-21 | 1967-09-21 | Solid State Display Device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1179640A true GB1179640A (en) | 1970-01-28 |
Family
ID=10426593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4293067A Expired GB1179640A (en) | 1967-09-21 | 1967-09-21 | Solid State Display Device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1179640A (en) |
-
1967
- 1967-09-21 GB GB4293067A patent/GB1179640A/en not_active Expired
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