US3902240A - Integrated cathode and channel plate multiplier - Google Patents

Integrated cathode and channel plate multiplier Download PDF

Info

Publication number
US3902240A
US3902240A US485657A US48565774A US3902240A US 3902240 A US3902240 A US 3902240A US 485657 A US485657 A US 485657A US 48565774 A US48565774 A US 48565774A US 3902240 A US3902240 A US 3902240A
Authority
US
United States
Prior art keywords
wafer
microchannel plate
electrode
input
input electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US485657A
Inventor
Keun Ho Chang
John Rennie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Army
Original Assignee
US Department of Army
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Army filed Critical US Department of Army
Priority to US485657A priority Critical patent/US3902240A/en
Application granted granted Critical
Publication of US3902240A publication Critical patent/US3902240A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/24—Dynodes having potential gradient along their surfaces
    • H01J43/246—Microchannel plates [MCP]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Definitions

  • ABSTRACT A microchannel plate in which a novel input electrode is made of one material that integrally functions as a photocathode as well as a conductive layer.
  • An output electrode is made from vacuum deposited thin metallic film of, for example, nickel, chromium, inconel, nicrome, etc.
  • the input electrode may be made of some multi-alkali photocathode or made of a semiconductor, such as a gallium arsenide single crystal film.
  • the microchannel plate is ordinarily made of glass. However, the plate may be made of a highly resistive semiconductor, such as gallium phosphide.
  • the input electrode may further contain any conventionally available photocathode, such as S-20, or a single crystalline semiconductor epitaxially grown on the input side of a semiconductor microchannel plate.
  • FIG. 2 IVIIILA Y 'AIIIIII'A lllllb A qllllllb A 1IIIIIID FIG. 2
  • the electron emitting photocathode is generally separated from, but close to, the input electrode of the microchannel plate. Even if the input conductor and photocathode are contiguous with each other, each layer is made of difi'erent material.
  • the present invention provides one integral layer, deposited on the input side of a microchannel plate, that functions both as an electron emitter and as an input electrode bias source for the microchannel plate wafer.
  • This invention is a microchannel plate in which the input electrode is made of a material that functions as a cathode as well as an input electrode.
  • This material may be some conventional multi-alkali photocathode.
  • the photocathode may also be any conventionally available photocathode, such as -20, or it may be a single crystalline semiconductor, when used with a semiconductor microchannel plate wafer, with the single crystalline semiconductor epitaxially grown on the input side of the microchannel plate to form an input electrode.
  • Gallium arsenide may be used as the photocathode single crystalline material epitaxially grown on a semiconductor microchannel plate wafer made of gallium phosphide.
  • the microchannel plate and photocathode are made of different materials in most cases.
  • the photocathode electrode may be made of the same material as the microchannel plate in the case of gallium arsenide single crystal, and the input electrode doped with zinc to make the photocathode a low resistivity layer as well as a good photocathode. Electron multiplication takes place when an electron begins moving between the input and output electrodes. A phosphor screen is positioned close to the output electrode and emits light therefrom when struck by these electrons.
  • FIG. 1 shows the wafer of a microchannel plate ac cording to the present invention
  • FIG. 2 shows a magnified view of the input side of the microchannel plate wafer
  • FIG. 3 illustrates a schematic of the amplification mechanism of one microchannel
  • F IG, 4 shows a cross-section of the integrated photocathode and input electrode.
  • FIG. 1 a typical microchannel plate of the present invention is shown with the input electrode and output electrode 14 on the opposite sides of a microchannel plate wafer 12.
  • a voltage source 8 is connected to electrodes 10 and 14. This voltage connected to electrodes l0 and 14 supplies the proper electron acceleration bias across the microchannel plate wafer 12.
  • Wafer 12 is formed by a stack of short pipes in which the length of the pipes is the thickness of the wafer. These pipes, or channels, may be formed through wafer 12 by focussing electron beams on one side of the wafer and burning holes therethrough.
  • the channels may also be drilled with laser beams by using a prepared highly reflective metallic template produced by photoetching or other means and then shine high power pulses or collimated laser beams through the template onto the input electrode side and out the output electrode side.
  • the next step in the process is to chemically etch the input side of wafer 12 so that the solid portions of wafer 12 are partially etched forming an oval shape.
  • the oval shape is shown in FIG. 4 by numeral 22.
  • the output side of wafer 12 is covered by some chemically inert material during the etching and, therefore, the solid portion on the output side of wafer 12 remains rather blunt.
  • the material used to produce electrode 10 is epitaxially deposited on the input side of wafer 12, filling in over the oval shape forming peaks and resulting beveled edges 18. Beveled edges 18 surround channels 16 on the input side. Photons striking the beveled edges 18 cause electrons to be emitted therefrom. Wafer 12 functions as an electron multiplier when the electrons emitted from electrode 10 enter the channels. The electrons entering the channels are accelerated therethrough by voltages applied to electrodes 10 and 14.
  • Novel features of this microchannel plate are the veveled shape of input electrode 10 and the fact that electrode 10 is made of an integral layer functioning not only as an electron acceleration electrode but also as a cathode.
  • Input electrode 10 accomplishes this integrated action by being made of only one material, with this material deposited directly on the input side of wafer 12.
  • Wafer 12 may be made of glass. However, it may be made of any semiconductor, such as gallium phosphide, where intrinsic resistivity is very high.
  • Electrode 10 may be made of a single crystalline semiconductor, such as gallium arsenide, epitaxially grown on the input side of the wafer. Electrode 10 may also be made of some conventionally available photocathode material, such as S-20.
  • Output electrode 14 is a metallic thin film vacuum deposited on the output side of wafer 12, and may be made of nickel, chromium, inconel and nicrome, etc., or alloys thereof.
  • the cathode function of input electrode 10 operates in the reflective mode. In operation when photons strike the input electrode, electrons are knocked off, or reflected, in the reflective mode. When the electrons are reflected off the beveled edge 18 of input electrode 10 as shown in FIGS. 3 and 4 these electrons are then drawn into channels 16 by the electric field within the channels caused by bias voltages on electrodes 10 and 14. These reflected electrons pass through the channels striking the side walls thereof and causing secondary electron emission from the walls of the microchannel plate wafer. In this manner, the few electrons emitted from input electrode 10 by photoemission are multiplied through the channels of wafer 12 by secondary emission and emerge as a much higher multiple of electrons.
  • the microchannel plate of the present invention is the type used as an electronic image amplifier in an image intensifying device. That is, a faint optical image projected on input electrode 10 is converted into a highly amplified electronic image. About 50% of the incoming optical image is projected on beveled edges 18, causing electrons to be reflected off 18 into channels 16. A thin phosphor screen is placed in close proximity to the output electrode 14 such that the electrons from the electronic image strike the screen and converts the amplified electronic image back to an optical image.
  • the wafer 12 is from 1 to 2 centimeters in diameter and is about 0.015 to 0.02 centimeters in thickness.
  • Wafer 12 is preferably made of a single crystal semiconductor, such as gallium phosphide.
  • the resistivity of wafer 12 is about 10 ohms per centimeter.
  • Electrode 10 is preferably gallium arsenide or some other semiconductor single crystal that is about micrometers in thickness with a resistivity of about 1 ohm per centimeter.
  • the thickness and resistivity of the output electrode 14 is not critical but is probably about the same as for electrode 10.
  • the diameter of each channel 16 is about micrometers.
  • the valve of voltage source 8 is about 300 direct current volts when using the materials and the physical dimensions described above.
  • the microchannel plate gain is about 18,000.
  • a method of fabricating a microchannel plate electron multiplier comprising the steps of:
  • microchannel plate wafer having an input side and an output side with a plurality of microchannels therethrough;

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

A microchannel plate in which a novel input electrode is made of one material that integrally functions as a photocathode as well as a conductive layer. An output electrode is made from vacuum deposited thin metallic film of, for example, nickel, chromium, inconel, nicrome, etc. The input electrode may be made of some multi-alkali photocathode or made of a semiconductor, such as a gallium arsenide single crystal film. The microchannel plate is ordinarily made of glass. However, the plate may be made of a highly resistive semiconductor, such as gallium phosphide. The input electrode may further contain any conventionally available photocathode, such as S-20, or a single crystalline semiconductor epitaxially grown on the input side of a semiconductor microchannel plate.

Description

[ 1 Sept. 2, 1975 INTEGRATED CATHODE AND CHANNEL PLATE MULTIPLIER [75] Inventors: Keun Ho Chang, Arlington; John Rennie, Alexandria, both of Va.
[73] Assignee: The United States Government as represented by the Secretary of the Army, Washington, DC.
22 Filed July 3, 1974 [21] Appl. No.: 485,657
Related US. Application Data [62] Division of Ser. No. 308,898, Nov. 22, 1972,
PHOTONS 3,562,894 2/1971 Rome 29/592 3,569,997 3/1971 Lehovec 29/572 3,627,575 12/1971 Doyle 29/592 Primary ExaminerW. Tupman Attorney, Agent, or Firm-Max L. Harwell; Nathan Edelberg; Robert P. Gibson [57] ABSTRACT A microchannel plate in which a novel input electrode is made of one material that integrally functions as a photocathode as well as a conductive layer. An output electrode is made from vacuum deposited thin metallic film of, for example, nickel, chromium, inconel, nicrome, etc. The input electrode may be made of some multi-alkali photocathode or made of a semiconductor, such as a gallium arsenide single crystal film. The microchannel plate is ordinarily made of glass. However, the plate may be made of a highly resistive semiconductor, such as gallium phosphide. The input electrode may further contain any conventionally available photocathode, such as S-20, or a single crystalline semiconductor epitaxially grown on the input side of a semiconductor microchannel plate.
3 Claims, 4 Drawing Figures PATENTED 21975 sum 1 0i 2 FIG. 1
ILA llllll 4II|I|I AllllllA ,7
IVIIILA Y 'AIIIIII'A lllllb A qllllllb A 1IIIIIID FIG. 2
PATENTED SE 2 ms sum 2 qf 2 FIG. 3
FIG. 4
INTEGRATED CATHODE AND CHANNEL PLATE MULTIPLIER The invention described herein may be manufactured, used, or licensed by or for the Government for governmental purpose without the payment to us of any royally thereon.
This is a division of application Ser. No. 308,898, filed Nov. 22, 1972, now abandoned.
BACKGROUND OF THE INVENTION In previous microchannel plate electron multipliers the electron emitting photocathode is generally separated from, but close to, the input electrode of the microchannel plate. Even if the input conductor and photocathode are contiguous with each other, each layer is made of difi'erent material. The present invention provides one integral layer, deposited on the input side of a microchannel plate, that functions both as an electron emitter and as an input electrode bias source for the microchannel plate wafer.
SUMMARY OF THE INVENTION This invention is a microchannel plate in which the input electrode is made of a material that functions as a cathode as well as an input electrode. This material may be some conventional multi-alkali photocathode. The photocathode may also be any conventionally available photocathode, such as -20, or it may be a single crystalline semiconductor, when used with a semiconductor microchannel plate wafer, with the single crystalline semiconductor epitaxially grown on the input side of the microchannel plate to form an input electrode. Gallium arsenide may be used as the photocathode single crystalline material epitaxially grown on a semiconductor microchannel plate wafer made of gallium phosphide.
The microchannel plate and photocathode are made of different materials in most cases. However, the photocathode electrode may be made of the same material as the microchannel plate in the case of gallium arsenide single crystal, and the input electrode doped with zinc to make the photocathode a low resistivity layer as well as a good photocathode. Electron multiplication takes place when an electron begins moving between the input and output electrodes. A phosphor screen is positioned close to the output electrode and emits light therefrom when struck by these electrons.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows the wafer of a microchannel plate ac cording to the present invention;
FIG. 2 shows a magnified view of the input side of the microchannel plate wafer;
FIG. 3 illustrates a schematic of the amplification mechanism of one microchannel; and
F IG, 4 shows a cross-section of the integrated photocathode and input electrode.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT In FIG. 1, a typical microchannel plate of the present invention is shown with the input electrode and output electrode 14 on the opposite sides of a microchannel plate wafer 12. A voltage source 8 is connected to electrodes 10 and 14. This voltage connected to electrodes l0 and 14 supplies the proper electron acceleration bias across the microchannel plate wafer 12. Wafer 12 is formed by a stack of short pipes in which the length of the pipes is the thickness of the wafer. These pipes, or channels, may be formed through wafer 12 by focussing electron beams on one side of the wafer and burning holes therethrough. The channels may also be drilled with laser beams by using a prepared highly reflective metallic template produced by photoetching or other means and then shine high power pulses or collimated laser beams through the template onto the input electrode side and out the output electrode side. After the channels are drilled, the next step in the process is to chemically etch the input side of wafer 12 so that the solid portions of wafer 12 are partially etched forming an oval shape. The oval shape is shown in FIG. 4 by numeral 22. The output side of wafer 12 is covered by some chemically inert material during the etching and, therefore, the solid portion on the output side of wafer 12 remains rather blunt. The material used to produce electrode 10 is epitaxially deposited on the input side of wafer 12, filling in over the oval shape forming peaks and resulting beveled edges 18. Beveled edges 18 surround channels 16 on the input side. Photons striking the beveled edges 18 cause electrons to be emitted therefrom. Wafer 12 functions as an electron multiplier when the electrons emitted from electrode 10 enter the channels. The electrons entering the channels are accelerated therethrough by voltages applied to electrodes 10 and 14.
Novel features of this microchannel plate are the veveled shape of input electrode 10 and the fact that electrode 10 is made of an integral layer functioning not only as an electron acceleration electrode but also as a cathode. Input electrode 10 accomplishes this integrated action by being made of only one material, with this material deposited directly on the input side of wafer 12. Wafer 12 may be made of glass. However, it may be made of any semiconductor, such as gallium phosphide, where intrinsic resistivity is very high.
Electrode 10 may be made of a single crystalline semiconductor, such as gallium arsenide, epitaxially grown on the input side of the wafer. Electrode 10 may also be made of some conventionally available photocathode material, such as S-20. Output electrode 14 is a metallic thin film vacuum deposited on the output side of wafer 12, and may be made of nickel, chromium, inconel and nicrome, etc., or alloys thereof.
The cathode function of input electrode 10 operates in the reflective mode. In operation when photons strike the input electrode, electrons are knocked off, or reflected, in the reflective mode. When the electrons are reflected off the beveled edge 18 of input electrode 10 as shown in FIGS. 3 and 4 these electrons are then drawn into channels 16 by the electric field within the channels caused by bias voltages on electrodes 10 and 14. These reflected electrons pass through the channels striking the side walls thereof and causing secondary electron emission from the walls of the microchannel plate wafer. In this manner, the few electrons emitted from input electrode 10 by photoemission are multiplied through the channels of wafer 12 by secondary emission and emerge as a much higher multiple of electrons.
The microchannel plate of the present invention is the type used as an electronic image amplifier in an image intensifying device. That is, a faint optical image projected on input electrode 10 is converted into a highly amplified electronic image. About 50% of the incoming optical image is projected on beveled edges 18, causing electrons to be reflected off 18 into channels 16. A thin phosphor screen is placed in close proximity to the output electrode 14 such that the electrons from the electronic image strike the screen and converts the amplified electronic image back to an optical image.
Some of the dimensions and features of the present microchannel plate are as follows. The wafer 12 is from 1 to 2 centimeters in diameter and is about 0.015 to 0.02 centimeters in thickness. Wafer 12 is preferably made of a single crystal semiconductor, such as gallium phosphide. The resistivity of wafer 12 is about 10 ohms per centimeter. Electrode 10 is preferably gallium arsenide or some other semiconductor single crystal that is about micrometers in thickness with a resistivity of about 1 ohm per centimeter. The thickness and resistivity of the output electrode 14 is not critical but is probably about the same as for electrode 10. The diameter of each channel 16 is about micrometers. The valve of voltage source 8 is about 300 direct current volts when using the materials and the physical dimensions described above. The microchannel plate gain is about 18,000.
We claim:
1. A method of fabricating a microchannel plate electron multiplier comprising the steps of:
providing a microchannel plate wafer having an input side and an output side with a plurality of microchannels therethrough;
chemically etching said input side of the wafer to form oval shape solid portions around the plurality of microchannels at the input side;
epitaxially depositing an input electrode material containing photocathodic material therein over said oval shape solid portions forming a beveled edge around each of said plurality of microchannels;
depositing an output electrode on said output side of said wafer;
providing a direct current voltage source; and
connecting said voltage source across said input and output electrodes for providing electron acceleration bias across said wafer whereby photons impinging on said input electrode cause electrons to be emitted therefrom and accelerated through said plurality of microchannels and out of said output electrode.
2. A method of fabricating a microchannel plate electron multiplier as set forth in claim 1 wherein said input electrode is made of gallium arsenide single crystal film and said wafer is made of gallium phosphide.
3. A method of fabricating a microchannel plate electron multiplier as sct forth in claim 1 wherein said input electrode is made of some multialkali photocathode

Claims (3)

1. A METHOD OF FABRICATING A MICROCHANNEL PLATE ELECTRON MULTIPLIER COMPRISING THE STEPS OF: PROVIDING A MICROCHANNEL PLATE WAFER HAVING AN INPUT SIDE AND AN OUTPUT SIDE WITH A PLURALITY OF MICROCHANNELS THERETHROUGH, CHEMICALLY ETCHING SAID INPUT SIDE OF THE WAFER TO FORM OVAL SHAPE SOLID PORTIONS AROUND THE PLURALITY OF MICROCHANNELS AT THE INPUT SIDE, EPITAXIALLY DEPOSITING AN INPUT ELECTRODE MATERIAL CONTAINING PHOTOCATHODIC MATERIAL THEREIN OVER SAID OVAL SHAPE SOLID PORTIONS FORMING A BEVELED EDGE AROUND EACH OF SAID PLURALITY OF MICROCHANNELS, DEPOSITING AN OUTPUT ELECTRODE ON SAID OUTPUT SIDE OF SAID WAFER, PROVIDING A DIRECT CURRENT VOLTAGE SOURCE, AND CONNECTING SAID VOLTAGE SOURCE ACROSS SAID INPUT AND OUTPUT ELECTRODES FOR PROVIDING ELECTRON ACCELERATION BIAS ACROSS SAID WAFER WHEREBY PHOTONS IMPINGING ON SAID INPUT ELECTRODE CAUSE ELECTRONS TO BE EMITTED THEREFROM AND ACCELERATED THROUGH SAID PLURALITY OF MICROCHANNELS AND OUT OF SAID OUTPUT ELECTRODE.
2. A method of fabricating a microchannel plate electron multiplier as set forth in claim 1 wherein said input electrode is made of gallium arsenide single crystal film and said wafer is made of gallium phosphide.
3. A method of fabricating a microchannel plate electron multiplier as set forth in claim 1 wherein said input electrode is made of some multialkali photocathode material.
US485657A 1972-11-22 1974-07-03 Integrated cathode and channel plate multiplier Expired - Lifetime US3902240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US485657A US3902240A (en) 1972-11-22 1974-07-03 Integrated cathode and channel plate multiplier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30889872A 1972-11-22 1972-11-22
US485657A US3902240A (en) 1972-11-22 1974-07-03 Integrated cathode and channel plate multiplier

Publications (1)

Publication Number Publication Date
US3902240A true US3902240A (en) 1975-09-02

Family

ID=26976510

Family Applications (1)

Application Number Title Priority Date Filing Date
US485657A Expired - Lifetime US3902240A (en) 1972-11-22 1974-07-03 Integrated cathode and channel plate multiplier

Country Status (1)

Country Link
US (1) US3902240A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117366A (en) * 1973-11-03 1978-09-26 Emi Limited Radiation detectors
DE2831898A1 (en) * 1977-07-20 1979-02-08 Nasa DEVICE FOR CONVERSING RADIATION INTO VISIBLE LIGHT
US4156827A (en) * 1978-06-19 1979-05-29 The United States Of America As Represented By The Secretary Of The Army Matrix cathode channel image device
EP0541632A1 (en) * 1990-07-27 1993-05-19 K & M Electronics Co Channel electron multiplier phototube.
US5729244A (en) * 1995-04-04 1998-03-17 Lockwood; Harry F. Field emission device with microchannel gain element
DE19827094A1 (en) * 1998-06-18 1999-12-23 Treo Elektrooptik Gmbh Image converter e.g. image amplifier tube
US6522061B1 (en) 1995-04-04 2003-02-18 Harry F. Lockwood Field emission device with microchannel gain element
US20040099810A1 (en) * 2001-07-26 2004-05-27 Jean-Louis Gerstenmayer Ionising radiation detector with solid radiation conversion plate, and method for making same
US20050035629A1 (en) * 2003-02-28 2005-02-17 Paccar Inc Vehicle body panel mounting system
CN104992893A (en) * 2015-06-03 2015-10-21 中国建筑材料科学研究总院 Microchannel plate and preparation method thereof
US20210035789A1 (en) * 2019-07-29 2021-02-04 Thermo Finnigan Llc Ion-to-electron conversion dynode for ion imaging applications
US20230386810A1 (en) * 2022-05-24 2023-11-30 Elbit Systems Of America, Llc Microchannel plate and method of making the microchannel plate with metal contacts selectively formed on one side of channel openings

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3327151A (en) * 1963-08-19 1967-06-20 Philips Corp Light amplifier employing an electron multiplying electrode which supports a photocathode
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3497759A (en) * 1967-05-15 1970-02-24 Philips Corp Image intensifiers
US3562894A (en) * 1967-06-21 1971-02-16 Weston Instruments Inc Method of making electron multiplier wafer
US3569997A (en) * 1967-07-13 1971-03-09 Inventors And Investors Inc Photoelectric microcircuit components monolythically integrated with zone plate optics
US3627575A (en) * 1968-11-13 1971-12-14 Columbia Broadcasting Syst Inc Process for forming photoemissive surfaces

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3327151A (en) * 1963-08-19 1967-06-20 Philips Corp Light amplifier employing an electron multiplying electrode which supports a photocathode
US3497759A (en) * 1967-05-15 1970-02-24 Philips Corp Image intensifiers
US3562894A (en) * 1967-06-21 1971-02-16 Weston Instruments Inc Method of making electron multiplier wafer
US3569997A (en) * 1967-07-13 1971-03-09 Inventors And Investors Inc Photoelectric microcircuit components monolythically integrated with zone plate optics
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3627575A (en) * 1968-11-13 1971-12-14 Columbia Broadcasting Syst Inc Process for forming photoemissive surfaces

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117366A (en) * 1973-11-03 1978-09-26 Emi Limited Radiation detectors
DE2831898A1 (en) * 1977-07-20 1979-02-08 Nasa DEVICE FOR CONVERSING RADIATION INTO VISIBLE LIGHT
US4156827A (en) * 1978-06-19 1979-05-29 The United States Of America As Represented By The Secretary Of The Army Matrix cathode channel image device
EP0541632A1 (en) * 1990-07-27 1993-05-19 K & M Electronics Co Channel electron multiplier phototube.
EP0541632A4 (en) * 1990-07-27 1994-02-16 K And M Electronics, Inc.
US5729244A (en) * 1995-04-04 1998-03-17 Lockwood; Harry F. Field emission device with microchannel gain element
US6522061B1 (en) 1995-04-04 2003-02-18 Harry F. Lockwood Field emission device with microchannel gain element
DE19827094A1 (en) * 1998-06-18 1999-12-23 Treo Elektrooptik Gmbh Image converter e.g. image amplifier tube
US20040099810A1 (en) * 2001-07-26 2004-05-27 Jean-Louis Gerstenmayer Ionising radiation detector with solid radiation conversion plate, and method for making same
US20050035629A1 (en) * 2003-02-28 2005-02-17 Paccar Inc Vehicle body panel mounting system
US6896318B2 (en) * 2003-02-28 2005-05-24 Paccar Inc Vehicle body panel mounting system
CN104992893A (en) * 2015-06-03 2015-10-21 中国建筑材料科学研究总院 Microchannel plate and preparation method thereof
CN104992893B (en) * 2015-06-03 2017-12-08 中国建筑材料科学研究总院 A kind of preparation method of microchannel plate
US20210035789A1 (en) * 2019-07-29 2021-02-04 Thermo Finnigan Llc Ion-to-electron conversion dynode for ion imaging applications
US11854777B2 (en) * 2019-07-29 2023-12-26 Thermo Finnigan Llc Ion-to-electron conversion dynode for ion imaging applications
US20230386810A1 (en) * 2022-05-24 2023-11-30 Elbit Systems Of America, Llc Microchannel plate and method of making the microchannel plate with metal contacts selectively formed on one side of channel openings
US11948786B2 (en) * 2022-05-24 2024-04-02 Elbit Systems Of America, Llc Microchannel plate and method of making the microchannel plate with metal contacts selectively formed on one side of channel openings
US20240186129A1 (en) * 2022-05-24 2024-06-06 Elbit Systems Of America, Llc Microchannel plate and method of making the microchannel plate with metal contacts selectively formed on one side of channel openings

Similar Documents

Publication Publication Date Title
US3902240A (en) Integrated cathode and channel plate multiplier
GB1417032A (en) Cold cathode field electron emitting devices
US2960659A (en) Semiconductive electron source
US6657385B2 (en) Diamond transmission dynode and photomultiplier or imaging device using same
US3760216A (en) Anodic film for electron multiplication
US3660668A (en) Image intensifier employing channel multiplier plate
US2876374A (en) Electronic tube structures
US3986065A (en) Insulating nitride compounds as electron emitters
EP3400469B1 (en) Image intensifier for night vision device
US2903596A (en) Image transducers
US5710435A (en) Photomultiplier having a photocathode comprised of semiconductor material
US3036234A (en) Electron discharge devices employing secondary electron emission
US4967089A (en) Pulsed optical source
US4511822A (en) Image display tube having a channel plate electron multiplier
US4019082A (en) Electron emitting device and method of making the same
GB1015002A (en) Improvements in or relating to photosensitive electron emission device
JP3187302B2 (en) Electron emission cathode, electron emission element, flat display, and thermoelectric cooling device using the same, and method of manufacturing electron emission cathode
US4041342A (en) Electron multiplier with beam confinement structure
US3321659A (en) Radiation sensitive electron emissive device
US5680007A (en) Photomultiplier having a photocathode comprised of a compound semiconductor material
US3671795A (en) High contrast display for electron beam scanner
US6069445A (en) Having an electrical contact on an emission surface thereof
US3814977A (en) Image storage device
US3278782A (en) Electron emitter comprising photoconductive and low work function layers
US3885187A (en) Photodiode controlled electron velocity selector image tube