SE341225B - - Google Patents

Info

Publication number
SE341225B
SE341225B SE09483/68A SE948368A SE341225B SE 341225 B SE341225 B SE 341225B SE 09483/68 A SE09483/68 A SE 09483/68A SE 948368 A SE948368 A SE 948368A SE 341225 B SE341225 B SE 341225B
Authority
SE
Sweden
Prior art keywords
july
reverse biased
zones
fresnel
germanium
Prior art date
Application number
SE09483/68A
Inventor
K Lehovec
Original Assignee
K Lehovec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by K Lehovec filed Critical K Lehovec
Publication of SE341225B publication Critical patent/SE341225B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

1,193,228. Light modulators. K. LEHOVEC. 15 July, 1968 [13 July, 1967], No. 33680/68. Heading H4F. [Also in Divisions C4 and H1] A light modulator in the form of a diffractive Fresnel optical system is formed integral with a photosensitive element (Fig. 9). The latter is formed within a lead selenide film 118 or is the junction between an epitaxial gallium arsenide film 118 and the 10 ohm. cm. arsenic doped germanium body 100. A series of opaque zones 109-115 formed of vapour deposited cadmiumindium alloy alloyed to the germanium to form rectifying contacts constitute the Fresnel system. Radiation passing through this zone plate is modulated by the Franz-Keldysh effect if the zones are reverse biased with respect to a circumferential electrode of gold antimony or are alternately forward and reverse biased.
SE09483/68A 1967-07-13 1968-07-10 SE341225B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65324567A 1967-07-13 1967-07-13

Publications (1)

Publication Number Publication Date
SE341225B true SE341225B (en) 1971-12-20

Family

ID=24620064

Family Applications (1)

Application Number Title Priority Date Filing Date
SE09483/68A SE341225B (en) 1967-07-13 1968-07-10

Country Status (6)

Country Link
US (1) US3569997A (en)
DE (1) DE1764639B1 (en)
FR (1) FR1574423A (en)
GB (1) GB1193228A (en)
NL (1) NL6809931A (en)
SE (1) SE341225B (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763372A (en) * 1967-07-13 1973-10-02 Inventors & Investors Inc Zone plate optics monolithically integrated with photoelectric elements
US3668404A (en) * 1970-09-29 1972-06-06 Kurt Lehovec Electro-optical microtransducer comprising diffractive element monolithically integrated with photoelectric device
JPS4824480U (en) * 1971-07-17 1973-03-22
US3831031A (en) * 1972-09-15 1974-08-20 Raytheon Co Zone plate imaging system
US3801785A (en) * 1972-11-01 1974-04-02 Raytheon Co Spatially modulated imaging system
US3902240A (en) * 1972-11-22 1975-09-02 Us Army Integrated cathode and channel plate multiplier
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
DK79780A (en) * 1980-02-25 1981-08-26 Elektronikcentralen Solar cells with a semiconductor crystal and with a lighted surface battery of solar cells and methods for making the same
US4539482A (en) * 1980-10-09 1985-09-03 Canon Kabushiki Kaisha Reading apparatus
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
FR2536911B1 (en) * 1982-11-30 1987-09-18 Western Electric Co PHOTODETECTOR
US5181220A (en) * 1985-07-16 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting light concentration device
JPS6218076A (en) * 1985-07-16 1987-01-27 Mitsubishi Electric Corp Semiconductor light emission device
GB8618345D0 (en) * 1986-07-28 1986-09-03 Purvis A Optical components
US4878735A (en) * 1988-01-15 1989-11-07 Lookingglass Technology, Inc. Optical imaging system using lenticular tone-plate elements
US5360973A (en) * 1990-02-22 1994-11-01 Innova Laboratories, Inc. Millimeter wave beam deflector
JPH05145049A (en) * 1991-11-19 1993-06-11 Yamatake Honeywell Co Ltd Photoelectric conversion device
US6437762B1 (en) 1995-01-11 2002-08-20 William A. Birdwell Dynamic diffractive optical transform
DE19515369B4 (en) * 1995-05-02 2007-05-24 Colour Control Farbmeßtechnik GmbH Spectrally selective photodiode with diffractive structures
DE19816309B4 (en) * 1997-04-14 2008-04-03 CiS Institut für Mikrosensorik gGmbH Method for direct mounting of silicon sensors and sensors manufactured thereafter
DE10352741B4 (en) * 2003-11-12 2012-08-16 Austriamicrosystems Ag Radiation-detecting optoelectronic component, process for its production and use
US7109051B2 (en) * 2004-11-15 2006-09-19 Freescale Semiconductor, Inc. Method of integrating optical devices and electronic devices on an integrated circuit
DE102007023561B4 (en) * 2007-04-16 2019-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrated color array with integrated components with photonic crystals
DE102008011793A1 (en) * 2008-02-29 2009-09-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. multispectral sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1561149A (en) * 1923-02-09 1925-11-10 Frederick Franklin Burya Light-projecting lens
US2148314A (en) * 1937-05-19 1939-02-21 Gen Electric Electric lamp
US2921184A (en) * 1950-02-09 1960-01-12 Fruengel Frank System for signaling by light impulses
US3189907A (en) * 1961-08-11 1965-06-15 Lylnan F Van Buskirk Zone plate radio transmission system
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light
DE1264513C2 (en) * 1963-11-29 1973-01-25 Texas Instruments Inc REFERENCE POTENTIAL FREE DC DIFFERENCE AMPLIFIER
US3302051A (en) * 1963-12-12 1967-01-31 Gen Electric Semiconductive alloy light source having improved optical transmissivity
US3443140A (en) * 1965-04-06 1969-05-06 Gen Electric Light emitting semiconductor devices of improved transmission characteristics
US3401266A (en) * 1965-09-20 1968-09-10 Bell Telephone Labor Inc Logic arrangement employing light generating diodes, photosensitive diodes and reflecting grating means
US3462605A (en) * 1965-09-22 1969-08-19 Gen Electric Semiconductor light-emitter and combination light-emitter-photocell wherein the reflector of the light-emitter is comprised of a material different from that of the light-emitter
US3449583A (en) * 1966-02-24 1969-06-10 Texas Instruments Inc Photoconductive electro-optic image intensifier utilizing polarized light

Also Published As

Publication number Publication date
DE1764639B1 (en) 1971-02-18
FR1574423A (en) 1969-07-11
NL6809931A (en) 1969-01-15
US3569997A (en) 1971-03-09
GB1193228A (en) 1970-05-28

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