DE1299036B - Transistorisierte Impulstreiberschaltung fuer Magnetkernspeicher - Google Patents
Transistorisierte Impulstreiberschaltung fuer MagnetkernspeicherInfo
- Publication number
- DE1299036B DE1299036B DEJ11697A DEJ0011697A DE1299036B DE 1299036 B DE1299036 B DE 1299036B DE J11697 A DEJ11697 A DE J11697A DE J0011697 A DEJ0011697 A DE J0011697A DE 1299036 B DE1299036 B DE 1299036B
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- driver circuit
- circuit according
- pulse driver
- transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims description 12
- 238000004804 winding Methods 0.000 claims description 54
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 230000008859 change Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 208000010201 Exanthema Diseases 0.000 description 1
- 108700003853 RON Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000002266 amputation Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 201000005884 exanthem Diseases 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- PJVWKTKQMONHTI-UHFFFAOYSA-N warfarin Chemical compound OC=1C2=CC=CC=C2OC(=O)C=1C(CC(=O)C)C1=CC=CC=C1 PJVWKTKQMONHTI-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/284—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator monostable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/06—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
- G11C11/06007—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/04—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using cores with one aperture or magnetic loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04113—Modifications for accelerating switching without feedback from the output circuit to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
- H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1167589XA | 1955-05-25 | 1955-05-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1299036B true DE1299036B (de) | 1969-07-10 |
Family
ID=22369026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ11697A Pending DE1299036B (de) | 1955-05-25 | 1956-05-18 | Transistorisierte Impulstreiberschaltung fuer Magnetkernspeicher |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE548071A (enrdf_load_stackoverflow) |
| DE (1) | DE1299036B (enrdf_load_stackoverflow) |
| FR (1) | FR1167589A (enrdf_load_stackoverflow) |
| NL (1) | NL207368A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1035776B (de) * | 1954-09-27 | 1958-08-07 | Ibm Deutschland | Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden |
-
0
- BE BE548071D patent/BE548071A/xx unknown
- NL NL207368D patent/NL207368A/xx unknown
-
1956
- 1956-05-17 FR FR1167589D patent/FR1167589A/fr not_active Expired
- 1956-05-18 DE DEJ11697A patent/DE1299036B/de active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1035776B (de) * | 1954-09-27 | 1958-08-07 | Ibm Deutschland | Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1167589A (fr) | 1958-11-26 |
| NL207368A (enrdf_load_stackoverflow) | |
| BE548071A (enrdf_load_stackoverflow) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1021603B (de) | Magnetostatischer íÀODERíÂ-Kreis | |
| DE1058284B (de) | Magnetkernmatrix-Speicheranordnung mit mindestens einer Schaltkernmatrix | |
| DE1183720B (de) | Bistabile Kippschaltung mit einem Magnetkern | |
| DE2049076A1 (de) | Kreuzpunkt Matnxgedachtnis | |
| DE1299036B (de) | Transistorisierte Impulstreiberschaltung fuer Magnetkernspeicher | |
| DE955606C (de) | Schaltungsanordnung fuer driedimensionalen Magnetkernspeicher | |
| DE1202335B (de) | Anordnung zur Auswahl einer von N induktiven Impedanzen | |
| DE1201402B (de) | Schaltvorrichtung mit einem rueckgekoppelten Transistor und einer Diode | |
| DE1449903C (de) | Speicheranordnung für zerstörungsfreie Abfragen | |
| DE1282707B (de) | Magnetkernspeicher | |
| DE2116255B2 (de) | Schaltungsanordnung zur Abgabe von in der Amplitude stabilisierten Stromimpulsen an eine variable in duktive Last | |
| CH462260A (de) | Schaltungsanordnung zum Überlastungsschutz eines geregelten Netzgerätes | |
| DE1524911C (de) | Verfahren zum Ansteuern einer Auswählmatrix | |
| DE1288132B (de) | Elektrische Impulsverzoegerungsschaltung | |
| DE1077896B (de) | Transistoranordnung fuer die Durchschaltung von Signalen | |
| DE1449903B2 (de) | Speicheranordnung fuer zerstoerungsfreie abfragen | |
| AT246464B (de) | Schaltkreissystem für taktgesteuerte elektronische Anlagen mit magnetischen Logikelementen | |
| DE1033449B (de) | Aufrufanordnung fuer Speichermatrix | |
| DE1158106B (de) | Impulsverstaerker mit Transistoren | |
| DE1142454B (de) | Magnetverstaerker | |
| DE1524911B2 (de) | Verfahren zum ansteuern einer auswaehlmatrix | |
| DE1499740A1 (de) | Schaltungsanordnung zum Betrieb von Matrixspeichern | |
| DE1474409B2 (de) | Speichervorrichtung mit mindestens einem steuerbaren Halbleitergleichrichter | |
| CH420260A (de) | Impulsgenerator für induktive Belastungen | |
| DE1073542B (de) | Schaltungsanordnung zur wahlw eisen Verteilung von Stromimpulsen auf mehrere Leitungen |