DE1289190B - Verfahren zur Herstellung eines halbleitenden Sperrschichtsystems sowie halbleitendes Sperrschichtsystem - Google Patents
Verfahren zur Herstellung eines halbleitenden Sperrschichtsystems sowie halbleitendes SperrschichtsystemInfo
- Publication number
- DE1289190B DE1289190B DEN13978A DEN0013978A DE1289190B DE 1289190 B DE1289190 B DE 1289190B DE N13978 A DEN13978 A DE N13978A DE N0013978 A DEN0013978 A DE N0013978A DE 1289190 B DE1289190 B DE 1289190B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- type
- zone
- electrode
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 46
- 230000004888 barrier function Effects 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims description 83
- 238000009792 diffusion process Methods 0.000 claims description 52
- 239000000155 melt Substances 0.000 claims description 30
- 239000000956 alloy Substances 0.000 claims description 29
- 229910045601 alloy Inorganic materials 0.000 claims description 29
- 230000035515 penetration Effects 0.000 claims description 28
- 239000012535 impurity Substances 0.000 claims description 27
- 239000007772 electrode material Substances 0.000 claims description 25
- 238000002844 melting Methods 0.000 claims description 25
- 230000008018 melting Effects 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 21
- 229910052787 antimony Inorganic materials 0.000 claims description 19
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 19
- 229910052738 indium Inorganic materials 0.000 claims description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 238000011109 contamination Methods 0.000 claims description 12
- 238000005204 segregation Methods 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 8
- 238000005275 alloying Methods 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 238000000855 fermentation Methods 0.000 description 1
- 230000004151 fermentation Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 230000005021 gait Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Conductive Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB24559/56A GB852904A (en) | 1956-08-10 | 1956-08-10 | Improvements in and relating to methods of manufacturing semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1289190B true DE1289190B (de) | 1969-02-13 |
Family
ID=10213541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN13978A Pending DE1289190B (de) | 1956-08-10 | 1957-08-07 | Verfahren zur Herstellung eines halbleitenden Sperrschichtsystems sowie halbleitendes Sperrschichtsystem |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3512055A (en, 2012) |
| BE (1) | BE559921A (en, 2012) |
| CH (1) | CH361058A (en, 2012) |
| DE (1) | DE1289190B (en, 2012) |
| ES (1) | ES237031A1 (en, 2012) |
| FR (1) | FR1200735A (en, 2012) |
| GB (1) | GB852904A (en, 2012) |
| NL (2) | NL219673A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5069907A (en) * | 1990-03-23 | 1991-12-03 | Phoenix Medical Technology | Surgical drape having incorporated therein a broad spectrum antimicrobial agent |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB751408A (en) * | 1953-05-25 | 1956-06-27 | Rca Corp | Semi-conductor devices and method of making same |
| GB754404A (en) * | 1953-09-04 | 1956-08-08 | Westinghouse Electric Int Co | Improvements in or relating to electrical devices of the semi-conductor type |
| DE1035787B (de) * | 1954-08-05 | 1958-08-07 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen, z. B.Flaechen-Transistoren |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
| BE532474A (en, 2012) * | 1953-10-13 | |||
| BE550586A (en, 2012) * | 1955-12-02 | |||
| US2805370A (en) * | 1956-04-26 | 1957-09-03 | Bell Telephone Labor Inc | Alloyed connections to semiconductors |
-
0
- NL NL113003D patent/NL113003C/xx active
- BE BE559921D patent/BE559921A/xx unknown
- NL NL219673D patent/NL219673A/xx unknown
-
1956
- 1956-08-10 GB GB24559/56A patent/GB852904A/en not_active Expired
-
1957
- 1957-08-07 ES ES0237031A patent/ES237031A1/es not_active Expired
- 1957-08-07 DE DEN13978A patent/DE1289190B/de active Pending
- 1957-08-08 CH CH361058D patent/CH361058A/de unknown
- 1957-08-08 FR FR1200735D patent/FR1200735A/fr not_active Expired
-
1967
- 1967-08-06 US US676563A patent/US3512055A/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB751408A (en) * | 1953-05-25 | 1956-06-27 | Rca Corp | Semi-conductor devices and method of making same |
| GB754404A (en) * | 1953-09-04 | 1956-08-08 | Westinghouse Electric Int Co | Improvements in or relating to electrical devices of the semi-conductor type |
| DE1035787B (de) * | 1954-08-05 | 1958-08-07 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen, z. B.Flaechen-Transistoren |
Also Published As
| Publication number | Publication date |
|---|---|
| GB852904A (en) | 1960-11-02 |
| FR1200735A (fr) | 1959-12-23 |
| ES237031A1 (es) | 1958-03-01 |
| NL219673A (en, 2012) | |
| NL113003C (en, 2012) | |
| BE559921A (en, 2012) | |
| US3512055A (en) | 1970-05-12 |
| CH361058A (de) | 1962-03-31 |
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