DE1287407B - Verfahren zum selektiven AEtzen von Halbleitermaterial - Google Patents
Verfahren zum selektiven AEtzen von HalbleitermaterialInfo
- Publication number
- DE1287407B DE1287407B DE1965J0029390 DEJ0029390A DE1287407B DE 1287407 B DE1287407 B DE 1287407B DE 1965J0029390 DE1965J0029390 DE 1965J0029390 DE J0029390 A DEJ0029390 A DE J0029390A DE 1287407 B DE1287407 B DE 1287407B
- Authority
- DE
- Germany
- Prior art keywords
- substance
- semiconductor
- silicon carbide
- semiconductor material
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 23
- 238000005530 etching Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 title claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965J0029390 DE1287407B (de) | 1965-11-15 | 1965-11-15 | Verfahren zum selektiven AEtzen von Halbleitermaterial |
| FR06008111A FR1498862A (fr) | 1965-11-15 | 1966-11-02 | Méthode de décapage sélectif d'un matériau semi-conducteur |
| GB5103766A GB1141513A (en) | 1965-11-15 | 1966-11-15 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965J0029390 DE1287407B (de) | 1965-11-15 | 1965-11-15 | Verfahren zum selektiven AEtzen von Halbleitermaterial |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1287407B true DE1287407B (de) | 1969-01-16 |
| DE1287407C2 DE1287407C2 (US20100056889A1-20100304-C00004.png) | 1969-09-04 |
Family
ID=7203594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1965J0029390 Granted DE1287407B (de) | 1965-11-15 | 1965-11-15 | Verfahren zum selektiven AEtzen von Halbleitermaterial |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1287407B (US20100056889A1-20100304-C00004.png) |
| FR (1) | FR1498862A (US20100056889A1-20100304-C00004.png) |
| GB (1) | GB1141513A (US20100056889A1-20100304-C00004.png) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3607448A (en) * | 1968-10-21 | 1971-09-21 | Hughes Aircraft Co | Chemical milling of silicon carbide |
| DE2929589A1 (de) * | 1979-07-04 | 1981-01-22 | Bbc Brown Boveri & Cie | Verfahren zur herstellung eines optisch transparenten und elektrisch leitfaehigen filmmusters |
| DE3069519D1 (en) * | 1979-12-11 | 1984-11-29 | Crosfield Electronics Ltd | Correction of gravure printing members |
| US5399515A (en) * | 1993-07-12 | 1995-03-21 | Motorola, Inc. | Method of fabricating a silicon carbide vertical MOSFET and device |
-
1965
- 1965-11-15 DE DE1965J0029390 patent/DE1287407B/de active Granted
-
1966
- 1966-11-02 FR FR06008111A patent/FR1498862A/fr not_active Expired
- 1966-11-15 GB GB5103766A patent/GB1141513A/en not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| None * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1498862A (fr) | 1967-10-20 |
| DE1287407C2 (US20100056889A1-20100304-C00004.png) | 1969-09-04 |
| GB1141513A (en) | 1969-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1915549C3 (de) | Verfahren zum epitaktischen Aufwachsen von Siliciumcarbidschichten | |
| DE2738384A1 (de) | Verfahren zur herstellung eines halbleiters | |
| DE1544214A1 (de) | Verfahren zum Zuechten von duennen,schwach dotierten homogenen epitaktischen Siliziumschichten bei niedrigen Temperaturen,insbesondere zum Herstellen von UEbergaengen mit extrem niedrigem Widerstand in Flussrichtung | |
| DE1266609B (de) | Verfahren zur Herstellung von insbesondere aus Siliciummonoxyd bestehenden Diffusions- und Legierungsmasken auf Halbleiteroberflaechen durch Aufdampfen im Vakuum | |
| DE1564191A1 (de) | Verfahren zum elektrischen Isolieren verschiedener in einer integrierten oder monolithischen Halbleitervorrichtung zusammengefasster Schaltelemente gegeneinander und gegen das gemeinsame Substrat | |
| DE1521396B1 (de) | Verfahren und vorrichtung zum herstellen eines halbleiter bauelementes mit einer schottky sperrschicht | |
| DE7015061U (de) | Halbleitervorrichtung. | |
| DE2103468A1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE3815512A1 (de) | Solarzelle mit verminderter effektiver rekombinationsgeschwindigkeit der ladungstraeger | |
| DE1287407B (de) | Verfahren zum selektiven AEtzen von Halbleitermaterial | |
| DE1803028A1 (de) | Feldeffekttransistor und Verfahren zum Herstellen des Transistors | |
| DE2316520C3 (de) | Verfahren zum Dotieren von Halbleiterplättchen durch Diffusion aus einer auf das Halbleitermaterial aufgebrachten Schicht | |
| DE1806578A1 (de) | Verfahren zur Erzeugung von kristallinen Abscheidungen in Form eines Musters auf einer elekrisch isolierenden einkristallinen Unterlage | |
| DE1614358C3 (de) | Verfahren zum Herstellen einer Ätzmaske für die Ätzbehandlung von Halbleiterkörpern | |
| DE1186950C2 (de) | Verfahren zum entfernen von unerwuenschten metallen aus einem einen pn-uebergang aufweisenden silicium-halbleiterkoerper | |
| DE2250989A1 (de) | Verfahren zur bildung einer anordnung monolithisch integrierter halbleiterbauelemente | |
| DE1297085B (de) | Verfahren zum Abscheiden einer einkristallinen Halbleiterschicht | |
| DE1444520A1 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE1544191B2 (de) | Verfahren zur Herstellung von Halbleitermaterial | |
| AT244391B (de) | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristallines Aufwachsen von Schichten | |
| DE1544191C3 (de) | Verfahren zur Herstellung von Halbleitermaterial | |
| CH670335A5 (US20100056889A1-20100304-C00004.png) | ||
| CH668861A5 (de) | Verfahren zur herstellung von festkoerper-halbleiter-vorrichtungen. | |
| DE1544295C3 (de) | Verfahren zur Phosphor-Dotierung von Halbleiterkörpern | |
| DE2007752B2 (de) | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |