DE1285551B - Transistorverstaerker, bestehend aus der Kaskadenschaltung eines Feldeffekttransistors und n Schichttransistoren (n mindestens gleich 1) mit hoher Steiheit und niedrigemKlirrfaktor - Google Patents
Transistorverstaerker, bestehend aus der Kaskadenschaltung eines Feldeffekttransistors und n Schichttransistoren (n mindestens gleich 1) mit hoher Steiheit und niedrigemKlirrfaktorInfo
- Publication number
- DE1285551B DE1285551B DEN30448A DEN0030448A DE1285551B DE 1285551 B DE1285551 B DE 1285551B DE N30448 A DEN30448 A DE N30448A DE N0030448 A DEN0030448 A DE N0030448A DE 1285551 B DE1285551 B DE 1285551B
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- layer
- zone
- resistance
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 10
- 230000001681 protective effect Effects 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 230000002787 reinforcement Effects 0.000 claims 2
- 239000012190 activator Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 description 2
- 210000001217 buttock Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6606165A NL6606165A (enrdf_load_stackoverflow) | 1966-05-06 | 1966-05-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1285551B true DE1285551B (de) | 1968-12-19 |
Family
ID=19796516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN30448A Pending DE1285551B (de) | 1966-05-06 | 1967-05-03 | Transistorverstaerker, bestehend aus der Kaskadenschaltung eines Feldeffekttransistors und n Schichttransistoren (n mindestens gleich 1) mit hoher Steiheit und niedrigemKlirrfaktor |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT266214B (enrdf_load_stackoverflow) |
| BE (1) | BE698090A (enrdf_load_stackoverflow) |
| CH (1) | CH463578A (enrdf_load_stackoverflow) |
| DE (1) | DE1285551B (enrdf_load_stackoverflow) |
| ES (1) | ES340095A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1189453A (enrdf_load_stackoverflow) |
| NL (1) | NL6606165A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2705276A1 (de) * | 1976-02-26 | 1977-09-01 | Tokyo Shibaura Electric Co | Konstantstromschaltung |
-
1966
- 1966-05-06 NL NL6606165A patent/NL6606165A/xx unknown
-
1967
- 1967-05-03 DE DEN30448A patent/DE1285551B/de active Pending
- 1967-05-03 ES ES340095A patent/ES340095A1/es not_active Expired
- 1967-05-03 CH CH627867A patent/CH463578A/de unknown
- 1967-05-03 AT AT414667A patent/AT266214B/de active
- 1967-05-04 GB GB20714/67A patent/GB1189453A/en not_active Expired
- 1967-05-05 BE BE698090D patent/BE698090A/xx unknown
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2705276A1 (de) * | 1976-02-26 | 1977-09-01 | Tokyo Shibaura Electric Co | Konstantstromschaltung |
Also Published As
| Publication number | Publication date |
|---|---|
| AT266214B (de) | 1968-11-11 |
| CH463578A (de) | 1968-10-15 |
| NL6606165A (enrdf_load_stackoverflow) | 1967-11-07 |
| GB1189453A (en) | 1970-04-29 |
| BE698090A (enrdf_load_stackoverflow) | 1967-11-06 |
| ES340095A1 (es) | 1968-06-01 |
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