DE1278801B - Verfahren zum AEtzen oder Polieren eines Kristalls aus einer ó¾-ó§-Verbindung - Google Patents

Verfahren zum AEtzen oder Polieren eines Kristalls aus einer ó¾-ó§-Verbindung

Info

Publication number
DE1278801B
DE1278801B DEW33527A DEW0033527A DE1278801B DE 1278801 B DE1278801 B DE 1278801B DE W33527 A DEW33527 A DE W33527A DE W0033527 A DEW0033527 A DE W0033527A DE 1278801 B DE1278801 B DE 1278801B
Authority
DE
Germany
Prior art keywords
etching
methanol
crystal
polishing
bromine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW33527A
Other languages
German (de)
English (en)
Inventor
Calvin Souther Fuller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US163126A external-priority patent/US3156596A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1278801B publication Critical patent/DE1278801B/de
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H10P50/646—
    • H10P52/402—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
DEW33527A 1961-12-29 1962-12-14 Verfahren zum AEtzen oder Polieren eines Kristalls aus einer ó¾-ó§-Verbindung Pending DE1278801B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US163126A US3156596A (en) 1961-12-29 1961-12-29 Method for polishing gallium arsenide
US163094A US3262825A (en) 1961-12-29 1961-12-29 Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor

Publications (1)

Publication Number Publication Date
DE1278801B true DE1278801B (de) 1968-10-26

Family

ID=26859347

Family Applications (2)

Application Number Title Priority Date Filing Date
DEW33527A Pending DE1278801B (de) 1961-12-29 1962-12-14 Verfahren zum AEtzen oder Polieren eines Kristalls aus einer ó¾-ó§-Verbindung
DE19621546063 Pending DE1546063B2 (de) 1961-12-29 1962-12-19 Verfahren und vorrichtung zum polieren von galliumarsenid mit einem aetzmittel

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19621546063 Pending DE1546063B2 (de) 1961-12-29 1962-12-19 Verfahren und vorrichtung zum polieren von galliumarsenid mit einem aetzmittel

Country Status (6)

Country Link
US (1) US3262825A (enExample)
BE (1) BE625119A (enExample)
DE (2) DE1278801B (enExample)
GB (1) GB1025177A (enExample)
NL (1) NL286503A (enExample)
SE (1) SE307492B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1200422B (de) * 1963-07-20 1965-09-09 Siemens Ag Verfahren zur Herstellung duennschichtiger magnetfeldabhaengiger Halbleiterkoerper, insbesondere Hallgeneratoren, aus Verbindungen des Typs A B
US3436284A (en) * 1965-04-23 1969-04-01 Bell Telephone Labor Inc Method for the preparation of atomically clean silicon
US3629023A (en) * 1968-07-17 1971-12-21 Minnesota Mining & Mfg METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM
US3772100A (en) * 1971-06-30 1973-11-13 Denki Onkyo Co Ltd Method for forming strips on semiconductor device
US3775201A (en) * 1971-10-26 1973-11-27 Ibm Method for polishing semiconductor gallium phosphide planar surfaces
FR2168936B1 (enExample) * 1972-01-27 1977-04-01 Labo Electronique Physique
GB1446592A (en) * 1973-01-09 1976-08-18 English Electric Valve Co Ltd Dynode structures
US4138262A (en) * 1976-09-20 1979-02-06 Energy Conversion Devices, Inc. Imaging film comprising bismuth image-forming layer
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
US4380490A (en) * 1981-03-27 1983-04-19 Bell Telephone Laboratories, Incorporated Method of preparing semiconductor surfaces
DE3222790A1 (de) 1982-06-18 1983-12-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von indiumphosphidoberflaechen
DE3237235C2 (de) * 1982-10-07 1986-07-10 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Polieren von III-V-Halbleiteroberflächen
US4600469A (en) * 1984-12-21 1986-07-15 Honeywell Inc. Method for polishing detector material
US7624742B1 (en) 2004-04-05 2009-12-01 Quantum Global Technologies, Llc. Method for removing aluminum fluoride contamination from aluminum-containing surfaces of semiconductor process equipment
CN110788739A (zh) * 2019-10-31 2020-02-14 云南北方昆物光电科技发展有限公司 一种锑化铟单晶片的抛光方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2640767A (en) * 1951-02-12 1953-06-02 Dow Chemical Co Etching
US2806807A (en) * 1955-08-23 1957-09-17 Gen Electric Method of making contacts to semiconductor bodies
US2827367A (en) * 1955-08-30 1958-03-18 Texas Instruments Inc Etching of semiconductor materials
US2849296A (en) * 1956-01-23 1958-08-26 Philco Corp Etching composition and method
BE558436A (enExample) * 1956-06-18
US2927011A (en) * 1956-07-26 1960-03-01 Texas Instruments Inc Etching of semiconductor materials
US2984897A (en) * 1959-01-06 1961-05-23 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3031363A (en) * 1959-09-24 1962-04-24 Sylvania Electric Prod Method and apparatus for treating bodies of semiconductor material
US3114088A (en) * 1960-08-23 1963-12-10 Texas Instruments Inc Gallium arsenide devices and contact therefor
US3156596A (en) * 1961-12-29 1964-11-10 Bell Telephone Labor Inc Method for polishing gallium arsenide

Also Published As

Publication number Publication date
DE1546063B2 (de) 1971-07-29
DE1546063A1 (de) 1969-10-23
SE307492B (enExample) 1969-01-07
NL286503A (enExample) 1965-02-10
US3262825A (en) 1966-07-26
BE625119A (enExample) 1963-03-15
GB1025177A (en) 1966-04-06

Similar Documents

Publication Publication Date Title
DE1278801B (de) Verfahren zum AEtzen oder Polieren eines Kristalls aus einer ó¾-ó§-Verbindung
DE2706519C2 (de) Verfahren zum Reinigen der Oberfläche von polierten Siliciumplättchen
DE2822901C2 (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE2245809C3 (de) Verfahren zum Ätzen eines Musters in eine (lOO)-Oberfläche einer Halbleiterscheibe aus Silicium oder Germanium
DE68912351T2 (de) Ätzlösung für metallschicht mit photolackstruktur.
DE2151073A1 (de) Verfahren zum chemischen Polieren von dielektrischen Einkristallen
DE68916393T2 (de) Verfahren zur Herstellung von ebenen Wafern.
DE112010003900T5 (de) Lösung zum Ätzen von Silizium und Ätz-Verfahren
DE102006020823B4 (de) Verfahren zur Herstellung einer polierten Halbleiterscheibe
DE2007865A1 (de) Verfahren und Vorrichtung zum Polieren einer Silicium-Oberflache
EP0884772B1 (de) Verfahren zum Ätzen von Halbleiterscheiben
DE1771950B1 (de) Verfahren zum partiellen aetzen von chrom insbesondere zur herstellung photolithographischer masken
DE69703600T2 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE2951237C2 (de) Verfahren zum Entfernen von Galliumrückständen auf der Oberfläche einer A ↓I↓↓I↓↓I↓B↓V↓ Halbleiterschicht
DE1100178B (de) Verfahren zur Herstellung von anlegierten Elektroden an Halbleiter-koerpern aus Silizium oder Germanium
DE60107035T2 (de) Quarzglasvorrichtungen für die Halbleiterindustrie und Verfahren zur deren Herstellung
DE1915084A1 (de) Verbesserte Photoharze fuer die Halbleiterfertigung
DE2226264C2 (de) Verfahren zum zweistufigen Ätzen einer Ausnehmung
DE69503318T2 (de) HF-Reinigungsverfahren für Siliziumscheiben
DE2239145A1 (de) Verfahren zur behandlung von halbleitermaterialien aus iii-v-verbindungen
DE1290789B (de) Reinigungsverfahren fuer eine Halbleiterkoerper-Oberflaeche
AT241539B (de) Verfahren zum polierenden Abtragen von einkristallinen Halbleiterkörpern, insbesondere Halbleiterscheiben
DE1194064B (de) Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium
DE2237825C3 (de) Verfahren zum Reinigen von gesägten Halbleiterscheiben und dessen Verwendung zum Reinigen von Siliciumscheiben
EP0499830A2 (de) Ätzlösung für nasschemische Prozesse der Halbleiterherstellung

Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977