GB1025177A - An etchant for semiconductor materials - Google Patents

An etchant for semiconductor materials

Info

Publication number
GB1025177A
GB1025177A GB43790/62A GB4379062A GB1025177A GB 1025177 A GB1025177 A GB 1025177A GB 43790/62 A GB43790/62 A GB 43790/62A GB 4379062 A GB4379062 A GB 4379062A GB 1025177 A GB1025177 A GB 1025177A
Authority
GB
United Kingdom
Prior art keywords
methyl alcohol
bromine
chlorine
etched
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43790/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US163126A external-priority patent/US3156596A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1025177A publication Critical patent/GB1025177A/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
GB43790/62A 1961-12-29 1962-11-20 An etchant for semiconductor materials Expired GB1025177A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US163094A US3262825A (en) 1961-12-29 1961-12-29 Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
US163126A US3156596A (en) 1961-12-29 1961-12-29 Method for polishing gallium arsenide

Publications (1)

Publication Number Publication Date
GB1025177A true GB1025177A (en) 1966-04-06

Family

ID=26859347

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43790/62A Expired GB1025177A (en) 1961-12-29 1962-11-20 An etchant for semiconductor materials

Country Status (6)

Country Link
US (1) US3262825A (enExample)
BE (1) BE625119A (enExample)
DE (2) DE1278801B (enExample)
GB (1) GB1025177A (enExample)
NL (1) NL286503A (enExample)
SE (1) SE307492B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4428795A (en) 1982-06-18 1984-01-31 Wacker-Chemitronic Gesellschaft Fur Electronik-Grundstoffe Mbh Process for polishing indium phosphide surfaces

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1200422B (de) * 1963-07-20 1965-09-09 Siemens Ag Verfahren zur Herstellung duennschichtiger magnetfeldabhaengiger Halbleiterkoerper, insbesondere Hallgeneratoren, aus Verbindungen des Typs A B
US3436284A (en) * 1965-04-23 1969-04-01 Bell Telephone Labor Inc Method for the preparation of atomically clean silicon
US3629023A (en) * 1968-07-17 1971-12-21 Minnesota Mining & Mfg METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM
US3772100A (en) * 1971-06-30 1973-11-13 Denki Onkyo Co Ltd Method for forming strips on semiconductor device
US3775201A (en) * 1971-10-26 1973-11-27 Ibm Method for polishing semiconductor gallium phosphide planar surfaces
FR2168936B1 (enExample) * 1972-01-27 1977-04-01 Labo Electronique Physique
GB1446592A (en) * 1973-01-09 1976-08-18 English Electric Valve Co Ltd Dynode structures
US4138262A (en) * 1976-09-20 1979-02-06 Energy Conversion Devices, Inc. Imaging film comprising bismuth image-forming layer
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
US4380490A (en) * 1981-03-27 1983-04-19 Bell Telephone Laboratories, Incorporated Method of preparing semiconductor surfaces
DE3237235C2 (de) * 1982-10-07 1986-07-10 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Polieren von III-V-Halbleiteroberflächen
US4600469A (en) * 1984-12-21 1986-07-15 Honeywell Inc. Method for polishing detector material
US7624742B1 (en) 2004-04-05 2009-12-01 Quantum Global Technologies, Llc. Method for removing aluminum fluoride contamination from aluminum-containing surfaces of semiconductor process equipment
CN110788739A (zh) * 2019-10-31 2020-02-14 云南北方昆物光电科技发展有限公司 一种锑化铟单晶片的抛光方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2640767A (en) * 1951-02-12 1953-06-02 Dow Chemical Co Etching
US2806807A (en) * 1955-08-23 1957-09-17 Gen Electric Method of making contacts to semiconductor bodies
US2827367A (en) * 1955-08-30 1958-03-18 Texas Instruments Inc Etching of semiconductor materials
US2849296A (en) * 1956-01-23 1958-08-26 Philco Corp Etching composition and method
NL111788C (enExample) * 1956-06-18
US2927011A (en) * 1956-07-26 1960-03-01 Texas Instruments Inc Etching of semiconductor materials
US2984897A (en) * 1959-01-06 1961-05-23 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3031363A (en) * 1959-09-24 1962-04-24 Sylvania Electric Prod Method and apparatus for treating bodies of semiconductor material
US3114088A (en) * 1960-08-23 1963-12-10 Texas Instruments Inc Gallium arsenide devices and contact therefor
US3156596A (en) * 1961-12-29 1964-11-10 Bell Telephone Labor Inc Method for polishing gallium arsenide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4428795A (en) 1982-06-18 1984-01-31 Wacker-Chemitronic Gesellschaft Fur Electronik-Grundstoffe Mbh Process for polishing indium phosphide surfaces

Also Published As

Publication number Publication date
SE307492B (enExample) 1969-01-07
DE1546063B2 (de) 1971-07-29
US3262825A (en) 1966-07-26
BE625119A (enExample) 1963-03-15
NL286503A (enExample) 1965-02-10
DE1278801B (de) 1968-10-26
DE1546063A1 (de) 1969-10-23

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