DE1269474T1 - Symmetrisches schutzverfahren für erste und letzte sektoren eines synchronen flash-speichers - Google Patents

Symmetrisches schutzverfahren für erste und letzte sektoren eines synchronen flash-speichers

Info

Publication number
DE1269474T1
DE1269474T1 DE1269474T DE01929036T DE1269474T1 DE 1269474 T1 DE1269474 T1 DE 1269474T1 DE 1269474 T DE1269474 T DE 1269474T DE 01929036 T DE01929036 T DE 01929036T DE 1269474 T1 DE1269474 T1 DE 1269474T1
Authority
DE
Germany
Prior art keywords
flash memory
synchronous flash
sectors
protection method
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1269474T
Other languages
English (en)
Inventor
F Roohparvar
C Widmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/608,256 external-priority patent/US6654847B1/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE1269474T1 publication Critical patent/DE1269474T1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Storage Device Security (AREA)
  • Photovoltaic Devices (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
DE1269474T 2000-03-30 2001-03-30 Symmetrisches schutzverfahren für erste und letzte sektoren eines synchronen flash-speichers Pending DE1269474T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19350600P 2000-03-30 2000-03-30
US09/608,256 US6654847B1 (en) 2000-06-30 2000-06-30 Top/bottom symmetrical protection scheme for flash
PCT/US2001/040413 WO2001075893A2 (en) 2000-03-30 2001-03-30 Symmetrical protection scheme for first and last sectors of synchronous flash memory

Publications (1)

Publication Number Publication Date
DE1269474T1 true DE1269474T1 (de) 2003-08-14

Family

ID=26889065

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1269474T Pending DE1269474T1 (de) 2000-03-30 2001-03-30 Symmetrisches schutzverfahren für erste und letzte sektoren eines synchronen flash-speichers
DE60142959T Expired - Lifetime DE60142959D1 (de) 2000-03-30 2001-03-30 Sektoren eines synchronen flash-speichers

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60142959T Expired - Lifetime DE60142959D1 (de) 2000-03-30 2001-03-30 Sektoren eines synchronen flash-speichers

Country Status (7)

Country Link
EP (2) EP2287847A3 (de)
JP (2) JP3821431B2 (de)
KR (1) KR100438636B1 (de)
AT (1) ATE479989T1 (de)
AU (1) AU2001255825A1 (de)
DE (2) DE1269474T1 (de)
WO (1) WO2001075893A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101024334B1 (ko) * 2003-08-20 2011-03-23 매그나칩 반도체 유한회사 플래시 기억 장치의 과소거 방지 회로 및 그 방법
DE112004002832B4 (de) * 2004-04-13 2012-11-29 Spansion Llc (N.D.Ges.D. Staates Delaware) Sektorschutzschaltung für einen nichtflüchtigen Halbleiterspeicher, Sektorschutzverfahren und Halbleitervorrichtung
JP4344011B2 (ja) 2007-08-01 2009-10-14 パナソニック株式会社 不揮発性記憶装置
JP2012203919A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 半導体記憶装置およびその制御方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592641A (en) * 1993-06-30 1997-01-07 Intel Corporation Method and device for selectively locking write access to blocks in a memory array using write protect inputs and block enabled status
US5696917A (en) * 1994-06-03 1997-12-09 Intel Corporation Method and apparatus for performing burst read operations in an asynchronous nonvolatile memory
JP3487690B2 (ja) * 1995-06-20 2004-01-19 シャープ株式会社 不揮発性半導体記憶装置
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
US6031757A (en) * 1996-11-22 2000-02-29 Macronix International Co., Ltd. Write protected, non-volatile memory device with user programmable sector lock capability
FR2770327B1 (fr) * 1997-10-24 2000-01-14 Sgs Thomson Microelectronics Memoire non volatile programmable et effacable electriquement comprenant une zone protegeable en lecture et/ou en ecriture et systeme electronique l'incorporant
US6026016A (en) * 1998-05-11 2000-02-15 Intel Corporation Methods and apparatus for hardware block locking in a nonvolatile memory

Also Published As

Publication number Publication date
WO2001075893A3 (en) 2002-04-18
WO2001075893A2 (en) 2001-10-11
KR100438636B1 (ko) 2004-07-02
DE60142959D1 (de) 2010-10-14
KR20020087114A (ko) 2002-11-21
JP2003529881A (ja) 2003-10-07
JP2006164511A (ja) 2006-06-22
EP1269474A2 (de) 2003-01-02
ATE479989T1 (de) 2010-09-15
EP2287847A2 (de) 2011-02-23
JP3821431B2 (ja) 2006-09-13
EP2287847A3 (de) 2011-05-18
JP4229946B6 (ja) 2018-06-27
JP4229946B2 (ja) 2009-02-25
AU2001255825A1 (en) 2001-10-15
EP1269474B1 (de) 2010-09-01

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