DE1252819B - Elektronisches Festkörperbauelement - Google Patents
Elektronisches FestkörperbauelementInfo
- Publication number
- DE1252819B DE1252819B DENDAT1252819D DE1252819DA DE1252819B DE 1252819 B DE1252819 B DE 1252819B DE NDAT1252819 D DENDAT1252819 D DE NDAT1252819D DE 1252819D A DE1252819D A DE 1252819DA DE 1252819 B DE1252819 B DE 1252819B
- Authority
- DE
- Germany
- Prior art keywords
- glass
- substance
- component according
- state
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000011521 glass Substances 0.000 claims description 41
- 239000000126 substance Substances 0.000 claims description 34
- 230000008859 change Effects 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 3
- 229910014084 Na—B Inorganic materials 0.000 claims 1
- 230000002441 reversible effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052785 arsenic Inorganic materials 0.000 description 13
- 229910052714 tellurium Inorganic materials 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 239000011669 selenium Substances 0.000 description 12
- 239000003708 ampul Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 229910052711 selenium Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052720 vanadium Inorganic materials 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 230000006399 behavior Effects 0.000 description 4
- 229910052794 bromium Inorganic materials 0.000 description 4
- 239000011630 iodine Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- LULLIKNODDLMDQ-UHFFFAOYSA-N arsenic(3+) Chemical compound [As+3] LULLIKNODDLMDQ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052716 thallium Inorganic materials 0.000 description 3
- -1 vanadium-oxygen-phosphorus lead Chemical compound 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910003077 Ti−O Inorganic materials 0.000 description 1
- LEABNKXSQUTCOW-UHFFFAOYSA-N [O].[P].[V] Chemical compound [O].[P].[V] LEABNKXSQUTCOW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000013526 supercooled liquid Substances 0.000 description 1
- YIAVADUIRPWBCA-UHFFFAOYSA-N thallanylidynearsane Chemical compound [Tl]#[As] YIAVADUIRPWBCA-UHFFFAOYSA-N 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 210000004127 vitreous body Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
- H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US150374A US3241009A (en) | 1961-11-06 | 1961-11-06 | Multiple resistance semiconductor elements |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1252819B true DE1252819B (de) | 1967-10-26 |
Family
ID=22534236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT1252819D Withdrawn DE1252819B (de) | 1961-11-06 | Elektronisches Festkörperbauelement |
Country Status (6)
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3278317A (en) * | 1963-03-18 | 1966-10-11 | Bausch & Lomb | Vanadium pentoxide-metal metaphosphate glass compositions |
US3343972A (en) * | 1964-03-02 | 1967-09-26 | Texas Instruments Inc | Ge-te-as glasses and method of preparation |
DE1234880B (de) * | 1964-03-19 | 1967-02-23 | Danfoss As | Verfahren zur Herstellung eines elektronischen Festkoerperbauelementes zum Schalten |
GB1060505A (en) * | 1964-03-25 | 1967-03-01 | Nippon Telegraph & Telephone | Improvements in or relating to semiconductor devices |
DE1464880B2 (de) * | 1964-05-05 | 1970-11-12 | Danfoss A/S, Nordborg (Dänemark) | Elektronische Schaltanordnung unter Verwendung von sperrschichtfreien Halbleiter-Schaltelementen |
NL6507796A (US07816562-20101019-C00012.png) * | 1964-06-19 | 1965-12-20 | ||
NL6507894A (US07816562-20101019-C00012.png) * | 1964-06-19 | 1965-12-20 | ||
DE1279242B (de) * | 1964-06-19 | 1968-10-03 | Minnesota Mining & Mfg | Elektronisches Festkoerperbauelement zum Schalten |
DE1231824B (de) * | 1964-07-04 | 1967-01-05 | Danfoss As | Kontaktanordnung fuer ein elektronisches Festkoerperschaltelement und Verfahren zu seiner Herstellung |
US3402131A (en) * | 1964-07-28 | 1968-09-17 | Hitachi Ltd | Thermistor composition containing vanadium dioxide |
US3444438A (en) * | 1964-09-18 | 1969-05-13 | Ericsson Telefon Ab L M | Threshold semiconductor device |
DE1289201B (de) * | 1964-11-18 | 1969-02-13 | Danfoss As | Elektronisches Festkoerperbauelement zum Schalten |
DE1465450B1 (de) * | 1964-12-22 | 1970-07-23 | As Danfoss | Elektronisches Festk¦rperbauelement zum Schalten |
DE1266894B (de) * | 1965-03-03 | 1968-04-25 | Danfoss As | Sperrschichtfreies Halbleiterschaltelement |
US3408212A (en) * | 1965-06-04 | 1968-10-29 | Fairchild Camera Instr Co | Low melting oxide glass |
DE1299778C2 (de) * | 1965-06-18 | 1974-11-14 | Danfpes A/S, Nordborg (Danemark) | Elektronisches festkoerperbauelement zum schalten |
GB1141644A (en) * | 1965-11-10 | 1969-01-29 | Standard Telephones Cables Ltd | Electrical switching and memory devices |
DE1286657C2 (de) * | 1965-12-07 | 1974-11-14 | Danfoss A/S, Nordborg (Dänemark) | Verfahren zur herstellung eines bistabilen halbleiter-schaltelements und danach hergestelltes halbleiter-schaltelement |
DE1278626C2 (de) * | 1966-03-19 | 1976-11-04 | Danfoss A/S, Nordborg (Dänemark) | Elektrisches schaltelement und verfahren zu seiner herstellung |
DE1253837B (de) * | 1966-07-13 | 1967-11-09 | Siemens Ag | Spannungsgesteuerter Schalter |
US3498930A (en) * | 1966-12-20 | 1970-03-03 | Telephone & Telegraph Corp | Bistable semiconductive glass composition |
US3448425A (en) * | 1966-12-21 | 1969-06-03 | Itt | Solid state element comprising semiconductive glass composition exhibiting negative incremental resistance |
LU52765A1 (US07816562-20101019-C00012.png) * | 1967-01-06 | 1968-08-06 | ||
IL32745A (en) * | 1968-08-22 | 1973-06-29 | Energy Conversion Devices Inc | Method and apparatus for producing,storing and retrieving information |
US3530441A (en) * | 1969-01-15 | 1970-09-22 | Energy Conversion Devices Inc | Method and apparatus for storing and retrieving information |
JPS4911446B1 (US07816562-20101019-C00012.png) * | 1970-08-28 | 1974-03-16 | ||
US3761896A (en) * | 1972-04-18 | 1973-09-25 | Ibm | Memory array of cells containing bistable switchable resistors |
JPS4940487A (US07816562-20101019-C00012.png) * | 1972-08-22 | 1974-04-16 | ||
US3901996A (en) * | 1972-10-11 | 1975-08-26 | Nat Inst Res | Process for preparing a chalcogenide glass having silicon containing layer and product |
US4050082A (en) * | 1973-11-13 | 1977-09-20 | Innotech Corporation | Glass switching device using an ion impermeable glass active layer |
US4244722A (en) * | 1977-12-09 | 1981-01-13 | Noboru Tsuya | Method for manufacturing thin and flexible ribbon of dielectric material having high dielectric constant |
DE2856795C2 (de) * | 1977-12-30 | 1984-12-06 | Noboru Prof. Sendai Tsuya | Verwendung einer Stahlschmelze für ein Verfahren zum Stranggießen eines dünnen Bandes |
US4525223A (en) * | 1978-09-19 | 1985-06-25 | Noboru Tsuya | Method of manufacturing a thin ribbon wafer of semiconductor material |
US4342943A (en) * | 1979-10-17 | 1982-08-03 | Owens-Illinois, Inc. | P2 O5 -V2 O5 -PbO glass which reduces arcing in funnel portion of CRT |
US4492763A (en) * | 1982-07-06 | 1985-01-08 | Texas Instruments Incorporated | Low dispersion infrared glass |
FR2594115B1 (fr) * | 1986-02-07 | 1988-05-06 | Centre Nat Rech Scient | Nouveaux verres a base d'halogenure de tellure, leur preparation, et leur application notamment dans les domaines de l'optoelectronique et de la transmission infrarouge |
JP2539062B2 (ja) * | 1989-12-18 | 1996-10-02 | ホーヤ株式会社 | 半導体微結晶含有多成分ガラス |
US5879955A (en) * | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US6653733B1 (en) | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
US6337266B1 (en) | 1996-07-22 | 2002-01-08 | Micron Technology, Inc. | Small electrode for chalcogenide memories |
US5998244A (en) * | 1996-08-22 | 1999-12-07 | Micron Technology, Inc. | Memory cell incorporating a chalcogenide element and method of making same |
US6015977A (en) | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
US6563156B2 (en) * | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2469569A (en) * | 1945-03-02 | 1949-05-10 | Bell Telephone Labor Inc | Point contact negative resistance devices |
US2641705A (en) * | 1946-12-04 | 1953-06-09 | Bell Telephone Labor Inc | Stabilized oscillator |
US2590893A (en) * | 1949-09-20 | 1952-04-01 | Paul H Sanborn | Insulator |
US2728881A (en) * | 1950-03-31 | 1955-12-27 | Gen Electric | Asymmetrically conductive devices |
US2718616A (en) * | 1952-12-31 | 1955-09-20 | Stromberg Carlson Co | Semi-conductive device |
US2821490A (en) * | 1953-03-11 | 1958-01-28 | Sylvania Electric Prod | Titanate rectifiers |
US2829321A (en) * | 1953-07-30 | 1958-04-01 | Sylvania Electric Prod | Arsenic tellurium alloys |
US3033714A (en) * | 1957-09-28 | 1962-05-08 | Sony Corp | Diode type semiconductor device |
US2961350A (en) * | 1958-04-28 | 1960-11-22 | Bell Telephone Labor Inc | Glass coating of circuit elements |
US3058009A (en) * | 1959-07-15 | 1962-10-09 | Shockley William | Trigger circuit switching from stable operation in the negative resistance region to unstable operation |
NL256639A (US07816562-20101019-C00012.png) * | 1959-10-08 | |||
US3117013A (en) * | 1961-11-06 | 1964-01-07 | Bell Telephone Labor Inc | Glass composition |
-
0
- BE BE624465D patent/BE624465A/xx unknown
- DE DENDAT1252819D patent/DE1252819B/de not_active Withdrawn
- NL NL284820D patent/NL284820A/xx unknown
-
1961
- 1961-11-06 US US150374A patent/US3241009A/en not_active Expired - Lifetime
-
1962
- 1962-10-25 GB GB40362/62A patent/GB1021510A/en not_active Expired
- 1962-10-25 FR FR913454A patent/FR1351433A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE624465A (US07816562-20101019-C00012.png) | |
NL284820A (US07816562-20101019-C00012.png) | |
FR1351433A (fr) | 1964-02-07 |
US3241009A (en) | 1966-03-15 |
GB1021510A (en) | 1966-03-02 |
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