DE1244113B - Verfahren zur Verringerung der Gitterstoerungen in aus Halbleitermaterial bestehenden Kristallen - Google Patents

Verfahren zur Verringerung der Gitterstoerungen in aus Halbleitermaterial bestehenden Kristallen

Info

Publication number
DE1244113B
DE1244113B DES82693A DES0082693A DE1244113B DE 1244113 B DE1244113 B DE 1244113B DE S82693 A DES82693 A DE S82693A DE S0082693 A DES0082693 A DE S0082693A DE 1244113 B DE1244113 B DE 1244113B
Authority
DE
Germany
Prior art keywords
semiconductor material
reducing
crystals
melt
crystals made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES82693A
Other languages
English (en)
Inventor
Dipl-Ing Joerg Dorner
Dipl-Ing Dr Theodor Rummel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL301226D priority Critical patent/NL301226A/xx
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES82693A priority patent/DE1244113B/de
Priority to FR955543A priority patent/FR1376154A/fr
Priority to CH1468463A priority patent/CH406160A/de
Priority to SE13331/63A priority patent/SE310356B/xx
Priority to GB47394/63A priority patent/GB1013064A/en
Priority to US327556A priority patent/US3268301A/en
Publication of DE1244113B publication Critical patent/DE1244113B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Description

709 610/442 7.67 © Bundesdrucfcerei Berlin

Claims (1)

  1. Patentanspruch:
    Verfahren zur Verringerung der Gitterstörungen in aus Halbleitermaterial bestehenden Kristallen, insbesonder Einkristallen, beim Ziehen der Kristalle mit Hilfe eines Keims aus einer Schmelze des Halbleitermaterials, bei dem durch den Kristall und die Schmelze ein elektrischer Gleichstrom geschickt wird, der während des Ziehens hinsichtlich seiner Richtung und Stärke praktisch nicht verändert wird, dadurch gekennzeichnet, daß zusätzlich zu dem elektrischen Gleichstrom ein elektrischer Wechselstrom durch den Kristall und die Schmelze geschickt wird.
    In Betracht gezogene Druckschriften:
    Deutsche Patentschrift Nr. 964 708;
    deutsche Auslegeschriften Nr. 1105 621,
    732;
    USA.-Patentschrift Nr. 2 789 039.
DES82693A 1962-12-03 1962-12-03 Verfahren zur Verringerung der Gitterstoerungen in aus Halbleitermaterial bestehenden Kristallen Pending DE1244113B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL301226D NL301226A (de) 1962-12-03
DES82693A DE1244113B (de) 1962-12-03 1962-12-03 Verfahren zur Verringerung der Gitterstoerungen in aus Halbleitermaterial bestehenden Kristallen
FR955543A FR1376154A (fr) 1962-12-03 1963-11-29 Procédé pour tirer des cristaux semi-conducteurs
CH1468463A CH406160A (de) 1962-12-03 1963-12-02 Verfahren zum Ziehen von Halbleiterkristallen aus Schmelzen
SE13331/63A SE310356B (de) 1962-12-03 1963-12-02
GB47394/63A GB1013064A (en) 1962-12-03 1963-12-02 Process for drawing a crystalline semiconductor body from a melt
US327556A US3268301A (en) 1962-12-03 1963-12-02 Method of pulling a semiconductor crystal from a melt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES82693A DE1244113B (de) 1962-12-03 1962-12-03 Verfahren zur Verringerung der Gitterstoerungen in aus Halbleitermaterial bestehenden Kristallen

Publications (1)

Publication Number Publication Date
DE1244113B true DE1244113B (de) 1967-07-13

Family

ID=7510532

Family Applications (1)

Application Number Title Priority Date Filing Date
DES82693A Pending DE1244113B (de) 1962-12-03 1962-12-03 Verfahren zur Verringerung der Gitterstoerungen in aus Halbleitermaterial bestehenden Kristallen

Country Status (6)

Country Link
US (1) US3268301A (de)
CH (1) CH406160A (de)
DE (1) DE1244113B (de)
GB (1) GB1013064A (de)
NL (1) NL301226A (de)
SE (1) SE310356B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2234512C3 (de) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
FR2358021A1 (fr) * 1976-07-09 1978-02-03 Radiotechnique Compelec Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
DE964708C (de) * 1955-01-13 1957-05-29 Siemens Ag Verfahren zum Herstellen von Zonen unterschiedlicher Dotierung in Halbleiterkristallen durch Ziehen des Kristalls aus der Schmelze
DE1106732B (de) * 1957-05-01 1961-05-18 Sylvania Electric Prod Verfahren zur Zonenreinigung von polykristallinen schmelzbaren Halbleitern

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
US2932562A (en) * 1956-12-27 1960-04-12 Bell Telephone Labor Inc Zone-melting with joule heat
US2970895A (en) * 1956-12-31 1961-02-07 Union Carbide Corp Process for crystalline growth employing collimated electrical energy
US2937216A (en) * 1957-12-30 1960-05-17 Minnesota Mining & Mfg Zone refining apparatus
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
DE964708C (de) * 1955-01-13 1957-05-29 Siemens Ag Verfahren zum Herstellen von Zonen unterschiedlicher Dotierung in Halbleiterkristallen durch Ziehen des Kristalls aus der Schmelze
DE1105621B (de) * 1955-01-13 1961-04-27 Siemens Ag Verfahren zur Beeinflussung der Kristallisation aus einer Schmelze aus Halbleitergrundstoff nach dem Stufen-ziehverfahren unter Anwendung des Peltier-Effektes
DE1106732B (de) * 1957-05-01 1961-05-18 Sylvania Electric Prod Verfahren zur Zonenreinigung von polykristallinen schmelzbaren Halbleitern

Also Published As

Publication number Publication date
US3268301A (en) 1966-08-23
NL301226A (de)
GB1013064A (en) 1965-12-15
SE310356B (de) 1969-04-28
CH406160A (de) 1966-01-31

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