DE1236077B - Halbleiter-Festkoerperschaltung mit eigener Stromversorgung - Google Patents

Halbleiter-Festkoerperschaltung mit eigener Stromversorgung

Info

Publication number
DE1236077B
DE1236077B DEJ20636A DEJ0020636A DE1236077B DE 1236077 B DE1236077 B DE 1236077B DE J20636 A DEJ20636 A DE J20636A DE J0020636 A DEJ0020636 A DE J0020636A DE 1236077 B DE1236077 B DE 1236077B
Authority
DE
Germany
Prior art keywords
layer
solid
semiconductor
circuit according
semiconductor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEJ20636A
Other languages
German (de)
English (en)
Inventor
Robert Anthony Hyman
Arthur Derrick Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE1236077B publication Critical patent/DE1236077B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/291—Applications

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DEJ20636A 1960-10-14 1961-10-10 Halbleiter-Festkoerperschaltung mit eigener Stromversorgung Pending DE1236077B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB35316/60A GB995727A (en) 1960-10-14 1960-10-14 Improvements in or relating to semiconductor devices
GB35315/60A GB998165A (en) 1960-10-14 1960-10-14 Improvements in or relating to electrical signal translating circuits
GB2908161 1961-08-11

Publications (1)

Publication Number Publication Date
DE1236077B true DE1236077B (de) 1967-03-09

Family

ID=27258789

Family Applications (3)

Application Number Title Priority Date Filing Date
DEJ20636A Pending DE1236077B (de) 1960-10-14 1961-10-10 Halbleiter-Festkoerperschaltung mit eigener Stromversorgung
DE19611414858 Pending DE1414858A1 (de) 1960-10-14 1961-10-10 Festkoerperschaltung mit eigener Stromversorgung
DEJ22192A Pending DE1279854B (de) 1960-10-14 1962-08-01 Halbleiterkoerper fuer integrierte Halbleiterschaltungen

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE19611414858 Pending DE1414858A1 (de) 1960-10-14 1961-10-10 Festkoerperschaltung mit eigener Stromversorgung
DEJ22192A Pending DE1279854B (de) 1960-10-14 1962-08-01 Halbleiterkoerper fuer integrierte Halbleiterschaltungen

Country Status (7)

Country Link
US (1) US3280333A (OSRAM)
BE (1) BE621278A (OSRAM)
CH (3) CH406431A (OSRAM)
DE (3) DE1236077B (OSRAM)
FR (2) FR1308083A (OSRAM)
GB (2) GB995727A (OSRAM)
NL (3) NL281945A (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412293A (en) * 1965-12-13 1968-11-19 Honeywell Inc Burner control apparatus with photodarlington flame detector
CH516874A (de) * 1970-05-26 1971-12-15 Bbc Brown Boveri & Cie Halbleiterbauelement
DE2211384A1 (de) * 1971-03-20 1972-11-30 Philips Nv Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung
US3911269A (en) * 1971-03-20 1975-10-07 Philips Corp Circuit arrangement having at least one circuit element which is energised by means of radiation and semiconductor device suitable for use in such a circuit arrangement
US4695120A (en) * 1985-09-26 1987-09-22 The United States Of America As Represented By The Secretary Of The Army Optic-coupled integrated circuits
FR2629639A1 (en) * 1988-04-01 1989-10-06 Balkanski Minko Self-powered integrated component of the junction type and method for its manufacture
US5196690A (en) * 1991-06-18 1993-03-23 The United States Of America As Represented By The Secretary Of The Navy Optically powered photomultiplier tube
US7082019B2 (en) * 2002-11-04 2006-07-25 The Boeing Company Method and apparatus to protect solar cells from electrostatic discharge damage
CN105047517B (zh) * 2015-07-08 2017-11-14 武汉京邦科技有限公司 一种数字光电倍增器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2824977A (en) * 1954-12-24 1958-02-25 Rca Corp Semiconductor devices and systems
NL107362C (OSRAM) * 1955-12-02
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
US3048797A (en) * 1957-04-30 1962-08-07 Rca Corp Semiconductor modulator
FR1256116A (fr) * 1959-02-06 1961-03-17 Texas Instruments Inc Nouveaux circuits électroniques miniatures et procédés pour leur fabrication
NL250955A (OSRAM) * 1959-08-05
US3050684A (en) * 1959-10-05 1962-08-21 Nuclcar Corp Of America Self-powered semiconductor oscillators
US3134905A (en) * 1961-02-03 1964-05-26 Bell Telephone Labor Inc Photosensitive semiconductor junction device

Also Published As

Publication number Publication date
DE1279854B (de) 1968-10-10
US3280333A (en) 1966-10-18
GB998165A (en) 1965-07-14
NL270244A (OSRAM) 1900-01-01
CH406432A (de) 1966-01-31
CH415857A (de) 1966-06-30
DE1414858A1 (de) 1968-10-10
FR82164E (fr) 1964-01-04
NL270243A (OSRAM) 1900-01-01
CH406431A (de) 1966-01-31
BE621278A (OSRAM) 1900-01-01
GB995727A (en) 1965-06-23
FR1308083A (fr) 1962-11-03
NL281945A (OSRAM) 1900-01-01

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