DE1231355B - Verfahren zur Herstellung einer Halbleiter-anordnung mit einem legierten pn-UEbergang - Google Patents
Verfahren zur Herstellung einer Halbleiter-anordnung mit einem legierten pn-UEbergangInfo
- Publication number
- DE1231355B DE1231355B DES86813A DES0086813A DE1231355B DE 1231355 B DE1231355 B DE 1231355B DE S86813 A DES86813 A DE S86813A DE S0086813 A DES0086813 A DE S0086813A DE 1231355 B DE1231355 B DE 1231355B
- Authority
- DE
- Germany
- Prior art keywords
- junction
- area
- semiconductor
- annular
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims description 22
- 238000005275 alloying Methods 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 10
- 238000001953 recrystallisation Methods 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910002065 alloy metal Inorganic materials 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 6
- 239000012190 activator Substances 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 2
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 claims description 2
- -1 P 2 O 5 Chemical class 0.000 claims 1
- 229910052810 boron oxide Inorganic materials 0.000 claims 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims 1
- 239000002585 base Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1053104D GB1053104A (sl) | 1963-08-20 | ||
| DES86813A DE1231355B (de) | 1963-08-20 | 1963-08-20 | Verfahren zur Herstellung einer Halbleiter-anordnung mit einem legierten pn-UEbergang |
| CH656964A CH422163A (de) | 1963-08-20 | 1964-05-20 | Verfahren zur Herstellung eines pn-Übergangs mit teilweise ebener Begrenzungsfläche durch Legieren |
| NL6409509A NL6409509A (sl) | 1963-08-20 | 1964-08-18 | |
| FR985605A FR1404345A (fr) | 1963-08-20 | 1964-08-19 | Procédé pour réaliser une jonction p-n dans un corps semi-conducteur |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES86813A DE1231355B (de) | 1963-08-20 | 1963-08-20 | Verfahren zur Herstellung einer Halbleiter-anordnung mit einem legierten pn-UEbergang |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1231355B true DE1231355B (de) | 1966-12-29 |
Family
ID=7513293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES86813A Pending DE1231355B (de) | 1963-08-20 | 1963-08-20 | Verfahren zur Herstellung einer Halbleiter-anordnung mit einem legierten pn-UEbergang |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH422163A (sl) |
| DE (1) | DE1231355B (sl) |
| GB (1) | GB1053104A (sl) |
| NL (1) | NL6409509A (sl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1764056B1 (de) * | 1967-03-27 | 1972-03-09 | Western Electric Co | Verfahren zum herstellen einer halbleiteranordnung |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB924121A (en) * | 1959-11-13 | 1963-04-24 | Siemens Schucertwerke Ag | A monocrystalline semi-conductor device |
-
0
- GB GB1053104D patent/GB1053104A/en active Active
-
1963
- 1963-08-20 DE DES86813A patent/DE1231355B/de active Pending
-
1964
- 1964-05-20 CH CH656964A patent/CH422163A/de unknown
- 1964-08-18 NL NL6409509A patent/NL6409509A/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB924121A (en) * | 1959-11-13 | 1963-04-24 | Siemens Schucertwerke Ag | A monocrystalline semi-conductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1764056B1 (de) * | 1967-03-27 | 1972-03-09 | Western Electric Co | Verfahren zum herstellen einer halbleiteranordnung |
| DE1764056C2 (de) * | 1967-03-27 | 1984-02-16 | Western Electric Co., Inc., 10038 New York, N.Y. | Verfahren zum Herstellen einer Halbleiteranordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6409509A (sl) | 1965-02-22 |
| GB1053104A (sl) | |
| CH422163A (de) | 1966-10-15 |
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