DE1222478B - Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation - Google Patents
Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch SublimationInfo
- Publication number
- DE1222478B DE1222478B DEW26522A DEW0026522A DE1222478B DE 1222478 B DE1222478 B DE 1222478B DE W26522 A DEW26522 A DE W26522A DE W0026522 A DEW0026522 A DE W0026522A DE 1222478 B DE1222478 B DE 1222478B
- Authority
- DE
- Germany
- Prior art keywords
- sublimation
- heated
- carbides
- crystals
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0687—After-treatment, e.g. grinding, purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
- C01B21/0728—After-treatment, e.g. grinding, purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/977—Preparation from organic compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/02—Boron; Borides
- C01B35/04—Metal borides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL256511D NL256511A (enrdf_load_stackoverflow) | 1959-10-08 | ||
DEW26522A DE1222478B (de) | 1959-10-08 | 1959-10-08 | Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation |
FR840246A FR1268952A (fr) | 1959-10-08 | 1960-10-04 | Procédé de fabrication de carbures, nitrures et borures cristallins de grande pureté |
GB34355/60A GB968590A (en) | 1959-10-08 | 1960-10-06 | Process for the manufacture of very pure crystalline carbides, nitrides or borides |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEW26522A DE1222478B (de) | 1959-10-08 | 1959-10-08 | Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1222478B true DE1222478B (de) | 1966-08-11 |
Family
ID=7598375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEW26522A Pending DE1222478B (de) | 1959-10-08 | 1959-10-08 | Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1222478B (enrdf_load_stackoverflow) |
GB (1) | GB968590A (enrdf_load_stackoverflow) |
NL (1) | NL256511A (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3364099A (en) * | 1963-10-03 | 1968-01-16 | Du Pont | Fibrous niobium carbide and nitride |
RU2228291C1 (ru) * | 2002-10-21 | 2004-05-10 | Томский научный центр СО РАН | Способ получения нитрида ниобия |
RU2312061C1 (ru) * | 2006-04-25 | 2007-12-10 | ГОУ ВПО "Уральский государственный технический университет - УПИ" | Способ получения нитевидного нитрида алюминия |
NO2730541T3 (enrdf_load_stackoverflow) * | 2011-07-04 | 2018-07-28 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE900694C (de) * | 1949-09-24 | 1954-01-04 | Leybold S Nachfolger E | Verfahren zum Trennen von Stoffgemischen durch Freiweg-Sublimation |
-
0
- NL NL256511D patent/NL256511A/xx unknown
-
1959
- 1959-10-08 DE DEW26522A patent/DE1222478B/de active Pending
-
1960
- 1960-10-06 GB GB34355/60A patent/GB968590A/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE900694C (de) * | 1949-09-24 | 1954-01-04 | Leybold S Nachfolger E | Verfahren zum Trennen von Stoffgemischen durch Freiweg-Sublimation |
Also Published As
Publication number | Publication date |
---|---|
GB968590A (en) | 1964-09-02 |
NL256511A (enrdf_load_stackoverflow) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3856514T2 (de) | Sublimationsanwachsen von Siliziumkarbideinkristallen | |
DE69300877T2 (de) | Wachstum von SiC-Einkristall. | |
Wilson | High‐Temperature X‐Ray Diffraction Investigation of the Uranium‐Carbon System | |
DE1521465C3 (de) | Verfahren zur Herstellung von texturlosem polykristallinen Silicium | |
AT524248B1 (de) | Verfahren zur Züchtung von Kristallen | |
DE1187098B (de) | Verfahren zum Herstellen von Koerpern aus hochgereinigtem Halbleitermaterial | |
Chi et al. | The synthesis of PrB6 nanowires and nanotubes by the self-catalyzed method | |
Hossain et al. | YB48 the metal rich boundary of YB66; crystal growth and thermoelectric properties | |
Kafalas et al. | Pressure-induced pyrochlore to perovskite transformations in the Sr1− xPbxRuO3 system | |
DE1222478B (de) | Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation | |
DE1292640B (de) | Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas | |
DE1188555B (de) | Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems | |
DE2831816C2 (enrdf_load_stackoverflow) | ||
Ginley et al. | Preparation and czochralski crystal growth of the iron titanates, FeTiO3, Fe2TiO4, and Fe2TiO5 | |
EP0006921B1 (de) | Verfahren zur herstellung von siliciumcarbidpulver | |
DE2624958C3 (de) | Verfahren zum Züchten von einkristallinem Galliumnitrid | |
Sanjines et al. | Synthesis and characterization of Nb2Se9 single crystals grown in molten solution | |
DE3531949A1 (de) | Verfahren zur herstellung von ss-zinkdiphosphid-einkristallen | |
DE1251722B (de) | Verfahren zum Herstellen von mit Phos phor dotiertem Halbleitermaterial | |
DE1042553B (de) | Verfahren zur Herstellung von Silicium grosser Reinheit | |
Weise et al. | Preparation of highly pure iron by vapour deposition | |
AT212879B (de) | Verfahren zur Oberflächenbehandlung von Körpern aus hochgereinigtem Halbleitermaterial | |
DE1644009C2 (de) | Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit homogener Antimondotierung | |
AT213846B (de) | Verfahren zur Herstellung von kristallinem, sehr reinem Siliziumkarbid, insbesondere für Halbleiter | |
DE1215665B (de) | Verfahren zum Herstellen von hochreinem Siliziumkarbid |