DE1222478B - Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation - Google Patents

Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation

Info

Publication number
DE1222478B
DE1222478B DEW26522A DEW0026522A DE1222478B DE 1222478 B DE1222478 B DE 1222478B DE W26522 A DEW26522 A DE W26522A DE W0026522 A DEW0026522 A DE W0026522A DE 1222478 B DE1222478 B DE 1222478B
Authority
DE
Germany
Prior art keywords
sublimation
heated
carbides
crystals
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW26522A
Other languages
German (de)
English (en)
Inventor
Dr Eduard Enk
Dr Julius Nickl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL256511D priority Critical patent/NL256511A/xx
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Priority to DEW26522A priority patent/DE1222478B/de
Priority to FR840246A priority patent/FR1268952A/fr
Priority to GB34355/60A priority patent/GB968590A/en
Publication of DE1222478B publication Critical patent/DE1222478B/de
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0687After-treatment, e.g. grinding, purification
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C01B21/0728After-treatment, e.g. grinding, purification
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • C01B32/963Preparation from compounds containing silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • C01B32/963Preparation from compounds containing silicon
    • C01B32/977Preparation from organic compounds containing silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/04Metal borides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DEW26522A 1959-10-08 1959-10-08 Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation Pending DE1222478B (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL256511D NL256511A (enrdf_load_stackoverflow) 1959-10-08
DEW26522A DE1222478B (de) 1959-10-08 1959-10-08 Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation
FR840246A FR1268952A (fr) 1959-10-08 1960-10-04 Procédé de fabrication de carbures, nitrures et borures cristallins de grande pureté
GB34355/60A GB968590A (en) 1959-10-08 1960-10-06 Process for the manufacture of very pure crystalline carbides, nitrides or borides

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEW26522A DE1222478B (de) 1959-10-08 1959-10-08 Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation

Publications (1)

Publication Number Publication Date
DE1222478B true DE1222478B (de) 1966-08-11

Family

ID=7598375

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW26522A Pending DE1222478B (de) 1959-10-08 1959-10-08 Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation

Country Status (3)

Country Link
DE (1) DE1222478B (enrdf_load_stackoverflow)
GB (1) GB968590A (enrdf_load_stackoverflow)
NL (1) NL256511A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364099A (en) * 1963-10-03 1968-01-16 Du Pont Fibrous niobium carbide and nitride
RU2228291C1 (ru) * 2002-10-21 2004-05-10 Томский научный центр СО РАН Способ получения нитрида ниобия
RU2312061C1 (ru) * 2006-04-25 2007-12-10 ГОУ ВПО "Уральский государственный технический университет - УПИ" Способ получения нитевидного нитрида алюминия
NO2730541T3 (enrdf_load_stackoverflow) * 2011-07-04 2018-07-28

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE900694C (de) * 1949-09-24 1954-01-04 Leybold S Nachfolger E Verfahren zum Trennen von Stoffgemischen durch Freiweg-Sublimation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE900694C (de) * 1949-09-24 1954-01-04 Leybold S Nachfolger E Verfahren zum Trennen von Stoffgemischen durch Freiweg-Sublimation

Also Published As

Publication number Publication date
GB968590A (en) 1964-09-02
NL256511A (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
DE3856514T2 (de) Sublimationsanwachsen von Siliziumkarbideinkristallen
DE69300877T2 (de) Wachstum von SiC-Einkristall.
Wilson High‐Temperature X‐Ray Diffraction Investigation of the Uranium‐Carbon System
DE1521465C3 (de) Verfahren zur Herstellung von texturlosem polykristallinen Silicium
AT524248B1 (de) Verfahren zur Züchtung von Kristallen
DE1187098B (de) Verfahren zum Herstellen von Koerpern aus hochgereinigtem Halbleitermaterial
Chi et al. The synthesis of PrB6 nanowires and nanotubes by the self-catalyzed method
Hossain et al. YB48 the metal rich boundary of YB66; crystal growth and thermoelectric properties
Kafalas et al. Pressure-induced pyrochlore to perovskite transformations in the Sr1− xPbxRuO3 system
DE1222478B (de) Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation
DE1292640B (de) Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas
DE1188555B (de) Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems
DE2831816C2 (enrdf_load_stackoverflow)
Ginley et al. Preparation and czochralski crystal growth of the iron titanates, FeTiO3, Fe2TiO4, and Fe2TiO5
EP0006921B1 (de) Verfahren zur herstellung von siliciumcarbidpulver
DE2624958C3 (de) Verfahren zum Züchten von einkristallinem Galliumnitrid
Sanjines et al. Synthesis and characterization of Nb2Se9 single crystals grown in molten solution
DE3531949A1 (de) Verfahren zur herstellung von ss-zinkdiphosphid-einkristallen
DE1251722B (de) Verfahren zum Herstellen von mit Phos phor dotiertem Halbleitermaterial
DE1042553B (de) Verfahren zur Herstellung von Silicium grosser Reinheit
Weise et al. Preparation of highly pure iron by vapour deposition
AT212879B (de) Verfahren zur Oberflächenbehandlung von Körpern aus hochgereinigtem Halbleitermaterial
DE1644009C2 (de) Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit homogener Antimondotierung
AT213846B (de) Verfahren zur Herstellung von kristallinem, sehr reinem Siliziumkarbid, insbesondere für Halbleiter
DE1215665B (de) Verfahren zum Herstellen von hochreinem Siliziumkarbid