DE1218411B - Verfahren zur Herstellung eines duennen einkristallinen Plaettchens - Google Patents

Verfahren zur Herstellung eines duennen einkristallinen Plaettchens

Info

Publication number
DE1218411B
DE1218411B DEZ8732A DEZ0008732A DE1218411B DE 1218411 B DE1218411 B DE 1218411B DE Z8732 A DEZ8732 A DE Z8732A DE Z0008732 A DEZ0008732 A DE Z0008732A DE 1218411 B DE1218411 B DE 1218411B
Authority
DE
Germany
Prior art keywords
layer
electron beam
seed crystal
thin
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEZ8732A
Other languages
German (de)
English (en)
Inventor
Dipl-Ing Fritz Schleich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RTX Corp
Original Assignee
United Aircraft Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL278170D priority Critical patent/NL278170A/xx
Application filed by United Aircraft Corp filed Critical United Aircraft Corp
Priority to DEZ8732A priority patent/DE1218411B/de
Priority to CH420662A priority patent/CH404966A/de
Priority to FR895531A priority patent/FR1321165A/fr
Priority to GB17384/62A priority patent/GB958852A/en
Publication of DE1218411B publication Critical patent/DE1218411B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DEZ8732A 1961-05-09 1961-05-09 Verfahren zur Herstellung eines duennen einkristallinen Plaettchens Pending DE1218411B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL278170D NL278170A (enrdf_load_stackoverflow) 1961-05-09
DEZ8732A DE1218411B (de) 1961-05-09 1961-05-09 Verfahren zur Herstellung eines duennen einkristallinen Plaettchens
CH420662A CH404966A (de) 1961-05-09 1962-04-05 Verfahren zur Herstellung von Einkristallen, insbesondere aus Halbleitermaterial
FR895531A FR1321165A (fr) 1961-05-09 1962-04-25 Procédé de préparation de monocristaux, en particulier de matière semi-conductrice
GB17384/62A GB958852A (en) 1961-05-09 1962-05-07 Method of producing single crystals particularly of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEZ8732A DE1218411B (de) 1961-05-09 1961-05-09 Verfahren zur Herstellung eines duennen einkristallinen Plaettchens

Publications (1)

Publication Number Publication Date
DE1218411B true DE1218411B (de) 1966-06-08

Family

ID=7620604

Family Applications (1)

Application Number Title Priority Date Filing Date
DEZ8732A Pending DE1218411B (de) 1961-05-09 1961-05-09 Verfahren zur Herstellung eines duennen einkristallinen Plaettchens

Country Status (4)

Country Link
CH (1) CH404966A (enrdf_load_stackoverflow)
DE (1) DE1218411B (enrdf_load_stackoverflow)
GB (1) GB958852A (enrdf_load_stackoverflow)
NL (1) NL278170A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3177317T2 (de) * 1980-04-10 1999-02-25 Massachusetts Institute Of Technology, Cambridge, Mass. Verfahren zur Herstellung von Blättern aus kristallinem Material
US5588994A (en) * 1980-04-10 1996-12-31 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968581C (de) * 1952-02-24 1958-03-06 Siemens Ag Verfahren zur Herstellung von fuer Gleichrichter, Richtleiter, Transistoren od. dgl. bestimmten Kristallen
DE1029939B (de) * 1955-06-27 1958-05-14 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleitersystemen
DE1040693B (de) * 1955-02-07 1958-10-09 Licentia Gmbh Verfahren zur Herstellung einer halbleitenden stoechiometrischen Verbindung aus Komponenten hoechster Reinheit fuer Halbleiteranordnungen
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968581C (de) * 1952-02-24 1958-03-06 Siemens Ag Verfahren zur Herstellung von fuer Gleichrichter, Richtleiter, Transistoren od. dgl. bestimmten Kristallen
DE1040693B (de) * 1955-02-07 1958-10-09 Licentia Gmbh Verfahren zur Herstellung einer halbleitenden stoechiometrischen Verbindung aus Komponenten hoechster Reinheit fuer Halbleiteranordnungen
DE1029939B (de) * 1955-06-27 1958-05-14 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleitersystemen
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum

Also Published As

Publication number Publication date
CH404966A (de) 1965-12-31
GB958852A (en) 1964-05-27
NL278170A (enrdf_load_stackoverflow) 1900-01-01

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