DE1181328B - Gesteuertes Halbleiterbauelement - Google Patents

Gesteuertes Halbleiterbauelement

Info

Publication number
DE1181328B
DE1181328B DEW30439A DEW0030439A DE1181328B DE 1181328 B DE1181328 B DE 1181328B DE W30439 A DEW30439 A DE W30439A DE W0030439 A DEW0030439 A DE W0030439A DE 1181328 B DE1181328 B DE 1181328B
Authority
DE
Germany
Prior art keywords
zone
voltage
semiconductor component
current
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW30439A
Other languages
German (de)
English (en)
Inventor
Martin Mohamed Atalla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1181328B publication Critical patent/DE1181328B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
DEW30439A 1960-08-17 1961-07-29 Gesteuertes Halbleiterbauelement Pending DE1181328B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50156A US3056888A (en) 1960-08-17 1960-08-17 Semiconductor triode

Publications (1)

Publication Number Publication Date
DE1181328B true DE1181328B (de) 1964-11-12

Family

ID=21963656

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW30439A Pending DE1181328B (de) 1960-08-17 1961-07-29 Gesteuertes Halbleiterbauelement

Country Status (5)

Country Link
US (1) US3056888A (enExample)
BE (1) BE606948A (enExample)
DE (1) DE1181328B (enExample)
GB (1) GB993314A (enExample)
NL (1) NL267831A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1279196B (de) * 1961-04-12 1968-10-03 Fairchild Camera Instr Co Flaechentransistor
DE1614300A1 (de) * 1966-12-13 1970-07-09 Philips Nv Feldeffekttransistor mit isolierter Torelektrode

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299911A (enExample) * 1951-08-02
NL265382A (enExample) * 1960-03-08
DE1160106B (de) * 1960-11-11 1963-12-27 Intermetall Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
NL293292A (enExample) * 1962-06-11
BE636316A (enExample) * 1962-08-23 1900-01-01
NL297602A (enExample) * 1962-09-07
NL297601A (enExample) * 1962-09-07 Rca Corp
US3268827A (en) * 1963-04-01 1966-08-23 Rca Corp Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability
NL302841A (enExample) * 1963-01-02
NL132570C (enExample) * 1963-03-07
GB1052379A (enExample) * 1963-03-28 1900-01-01
US3267389A (en) * 1963-04-10 1966-08-16 Burroughs Corp Quantum mechanical tunnel injection amplifying apparatus
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
US3360736A (en) * 1963-09-10 1967-12-26 Hitachi Ltd Two input field effect transistor amplifier
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
US3273066A (en) * 1963-12-20 1966-09-13 Litton Systems Inc Apparatus for detecting changes in the atmospheric electric field
GB1094068A (en) * 1963-12-26 1967-12-06 Rca Corp Semiconductive devices and methods of producing them
DE1514082C3 (de) * 1964-02-13 1984-08-30 Kabushiki Kaisha Hitachi Seisakusho, Tokio/Tokyo Feldeffekt-Transistor
US3339272A (en) * 1964-05-28 1967-09-05 Gen Motors Corp Method of forming contacts in semiconductor devices
USB381501I5 (enExample) * 1964-07-09
US3358195A (en) * 1964-07-24 1967-12-12 Motorola Inc Remote cutoff field effect transistor
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor
GB1095412A (enExample) * 1964-08-26
FR1424482A (fr) * 1964-12-01 1966-01-14 Csf élément de circuit électrique intégré à réactance inductive
US3414781A (en) * 1965-01-22 1968-12-03 Hughes Aircraft Co Field effect transistor having interdigitated source and drain and overlying, insulated gate
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
GB1153428A (en) 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
US3445924A (en) * 1965-06-30 1969-05-27 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characteristics
US3396317A (en) * 1965-11-30 1968-08-06 Texas Instruments Inc Surface-oriented high frequency diode
US3336486A (en) * 1966-09-06 1967-08-15 Energy Conversion Devices Inc Control system having multiple electrode current controlling device
DE1589683A1 (de) * 1967-04-04 1970-03-26 Itt Ind Gmbh Deutsche Flaechentransistor
US3497776A (en) * 1968-03-06 1970-02-24 Westinghouse Electric Corp Uniform avalanche-breakdown rectifiers
US3535600A (en) * 1968-10-10 1970-10-20 Gen Electric Mos varactor diode
US3590477A (en) * 1968-12-19 1971-07-06 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characeristics
US3600647A (en) * 1970-03-02 1971-08-17 Gen Electric Field-effect transistor with reduced drain-to-substrate capacitance
US3611070A (en) * 1970-06-15 1971-10-05 Gen Electric Voltage-variable capacitor with controllably extendible pn junction region
US3648127A (en) * 1970-09-28 1972-03-07 Fairchild Camera Instr Co Reach through or punch{13 through breakdown for gate protection in mos devices
CN107635769B (zh) 2015-05-19 2020-09-15 康宁股份有限公司 使片材与载体粘结的制品和方法
TWI892429B (zh) 2016-08-30 2025-08-01 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI810161B (zh) 2016-08-31 2023-08-01 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
WO2019036710A1 (en) 2017-08-18 2019-02-21 Corning Incorporated TEMPORARY BINDING USING POLYCATIONIC POLYMERS
JP7431160B2 (ja) * 2017-12-15 2024-02-14 コーニング インコーポレイテッド 基板を処理するための方法および結合されたシートを含む物品を製造するための方法
CN112259428A (zh) * 2020-10-23 2021-01-22 陕西科技大学 一种平面型纳米沟道真空场发射三极管装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791760A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2617865A (en) * 1948-06-17 1952-11-11 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791760A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device
US2791758A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1279196B (de) * 1961-04-12 1968-10-03 Fairchild Camera Instr Co Flaechentransistor
DE1614300A1 (de) * 1966-12-13 1970-07-09 Philips Nv Feldeffekttransistor mit isolierter Torelektrode

Also Published As

Publication number Publication date
BE606948A (fr) 1961-12-01
US3056888A (en) 1962-10-02
GB993314A (en) 1965-05-26
NL267831A (enExample)

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