DE1153118B - Verfahren zum Anbringen einer leitenden Kontaktelektrode auf einem einkristallinen Halbleiterkoerper eines Halbleiterbauelementes mittels Waerme und Druck - Google Patents

Verfahren zum Anbringen einer leitenden Kontaktelektrode auf einem einkristallinen Halbleiterkoerper eines Halbleiterbauelementes mittels Waerme und Druck

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Publication number
DE1153118B
DE1153118B DEN18747A DEN0018747A DE1153118B DE 1153118 B DE1153118 B DE 1153118B DE N18747 A DEN18747 A DE N18747A DE N0018747 A DEN0018747 A DE N0018747A DE 1153118 B DE1153118 B DE 1153118B
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DE
Germany
Prior art keywords
pressure
semiconductor
conductor
crystal
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN18747A
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English (en)
Inventor
Bernard Jansen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
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Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1153118B publication Critical patent/DE1153118B/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
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    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Description

DEUTSCHES
PATENTAMT
N 18747 Vmc/21g
ANMELDETAG: 8. AUGUST 1960
BEKANNTMACHUNG DER ANMELDUNG UNDAUSGABE DER AUSLEGESCHRIFT: 22. AUGUST 1963
Die Erfindung betrifft ein Verfahren zum Anbringen einer leitenden Kontaktelektrode auf einem einkristallinen Halbleiterkörper eines Halbleiterbauelementes mittels Wärme und Druck, bei dem diese Elektrode bei einer Temperatur über 1000C und unter der eutektischen Temperatur der zu verbindenden Materialien auf den Halbleiterkristall gedrückt und eine mechanisch feste Verbindung zwischen der Elektrode und dem Halbleiterkörper hergestellt wird. Dieses Verfahren kann bei dem Herstellen von Halbleiterbauelementen, wie Kristalldioden, Transistoren, Phototransistoren und Photozellen, Anwendung finden, welche einen halbleitenden Kristall mit einem oder mehreren mit diesem verbundenen Leitern enthalten.
Bei einem bekannten Verfahren wird der Halbleiterkristall auf einen elektrisch heizbaren Tisch gesetzt. Der Leiter wird dann mittels eines Stempels auf den Kristall gedrückt. Der angewendete Druck beträgt dabei 350 bis 700 kg/cm2. Da die herzustellende Verbindung nur einen Teil des Kristalls bedeckt, wird dieser Druck auf einen kleinen Teil der Kristalloberfläche konzentriert.
Beim Durchführen dieses Verfahrens ergab sich ein hoher Bruchprozentsatz der behandelten Halbleiterkristalle, sogar wenn der Kristall und der Tisch sorgfältig flach geschliffen waren. Die Erfindung bezweckt unter anderem, diesen Nachteil zu beseitigen.
Das obige Verfahren zum Anbringen einer leitenden Kontaktelektrode wird erfindungsgemäß so durchgeführt, daß der Halbleiterkörper vorher auf einer Trägerplatte, ζ. Β. aus Nickel, mittels eines Lötmaterials, das bei der zum Aufdrücken der Elektrode angewendeten Temperatur schmilzt, festgelötet wird.
Es hat sich ergeben, daß in diesem Falle der Bruchprozentsatz niedriger ist als bei lose auf einen Tisch gelegten Kristallen, und dies insbesondere, weil das Lötmittel während des Wärmedruckverbindens in geschmolzenen Zustand übergegangen ist.
Die Erfindung wird an Hand eines durch eine Zeichnung verdeutlichten Ausführungsbeispieles näher erläutert.
In den Fig. 1 bis 3 sind verschiedene Stadien der Herstellung einer Kristalldiode schematisch und schaubildlich dargestellt.
Eine Platte 1 aus einkristallinem Silicium der «-Art mit einem spezifischen Widerstand von 2 £>-cm und in der Größe von 2 · 2 · 0,080 mm wurde mit Hilfe von 1 % Antimon enthaltendem Zinn auf einer aus Nickel bestehenden Trägerplatte 2 festgelötet. Die Lotschicht ist mit 3 bezeichnet.
Verfahren zum Anbringen
einer leitenden Kontaktelektrode
auf einem einkristallinen Halbleiterkörper
eines Halbleiterbauelementes mittels Wärme
und Druck
Anmelder:
N. V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande)
Vertreter: Dr. rer. nat. P. Roßbach, Patentanwalt, Hamburg 1, Mönckebergstr. 7
Beanspruchte Priorität: Niederlande vom 11. August 1959 (Nr. 242 227)
Bernard Jansen, Eindhoven (Niederlande), ist als Erfinder genannt worden
Die Platte wurde darauf auf einen Tisch 4 gelegt, der mittels eines einstellbaren Heizelementes 5 erhitzt werden konnte (Fig. 2). Auf die Siliziumplatte wurde ein Aluminiumdraht 6 in der Stärke von 30 μ gelegt, der mittels eines Stempels 7 auf die Platte 1 gedruckt wurde, und gleichzeitig wurde der Tisch 4 auf eine Temperatur von 325° C erhitzt. Das Aluminium und das Germanium wurden vorher gereinigt und während der Erhitzung mittels einer Wasserstoffumgebung gegen Oxydation geschützt. Ein Druck von 600 kg/cm2 wurde 10 Minuten lang ausgeübt, worauf sich eine gleichrichtende Verbindung ergab (s. Fig. 3).
Während des Wärmedruckverbindens war die Lotschicht geschmolzen, denn der Schmelzpunkt von Zinn liegt bei 232° C. Es ergab sich, daß die geschmolzene Lotschicht die Bruchgefahr für den halbleitenden Kristall beträchtlich verkleinerte. Die Erfindung beschränkt sich aber nicht auf bestimmte Materialien für den Halbleiterkristall, das Lot oder die Trägerplatte. Nur soll das Lot eine genügend niedrige Schmelztemperatur aufweisen, damit es bei der beim Aufdrücken angewendeten Temperatur schmilzt.

Claims (1)

  1. PATENTANSPRUCH:
    Verfahren zum Anbringen einer leitenden Kontaktelektrode auf einem einkristallinen Halbleiter-
    309 668/248
    körper eines Halbleiterbauelementes mittels Wärme und Druck, bei dem diese Elektrode bei einer Temperatur über 100° C und unter der eutektischen Temperatur der zu verbindenden Materialien auf den Halbleiterkristall gedrückt und eine mechanisch feste Verbindung zwischen der Elektrode und dem Halbleiterkörper hergestellt wird, dadurch gekennzeichnet, daß der Halbleiterkörper vorher auf einer Trägerplatte, z. B. aus Nickel, mittels eines Lötmaterials, das bei der zum Aufdrücken der Elektrode angewendeten Temperatur schmilzt, festgelötet wird.
    In Betracht gezogene Druckschriften:
    Französische Patentschrift Nr. 1194 115;
    Bell Lab. Record, Bd. 36, 1958, N. 4, S. 127 bis
    130; Journal of the SMPTE, Bd. 66, Juni 1957, S. 323
    bis 329.
    Hierzu 1 Blatt Zeichnungen
    © 309 668/248 8.63
DEN18747A 1959-08-11 1960-08-08 Verfahren zum Anbringen einer leitenden Kontaktelektrode auf einem einkristallinen Halbleiterkoerper eines Halbleiterbauelementes mittels Waerme und Druck Pending DE1153118B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL242227 1959-08-11

Publications (1)

Publication Number Publication Date
DE1153118B true DE1153118B (de) 1963-08-22

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DEN18747A Pending DE1153118B (de) 1959-08-11 1960-08-08 Verfahren zum Anbringen einer leitenden Kontaktelektrode auf einem einkristallinen Halbleiterkoerper eines Halbleiterbauelementes mittels Waerme und Druck

Country Status (3)

Country Link
DE (1) DE1153118B (de)
GB (1) GB889782A (de)
NL (2) NL242227A (de)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1194115A (de) * 1957-04-03 1959-11-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1194115A (de) * 1957-04-03 1959-11-06

Also Published As

Publication number Publication date
GB889782A (en) 1962-02-21
NL242227A (de) 1900-01-01
NL108787C (de) 1900-01-01

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