DE1149460B - Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd - Google Patents
Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder ZinkoxydInfo
- Publication number
- DE1149460B DE1149460B DER28900A DER0028900A DE1149460B DE 1149460 B DE1149460 B DE 1149460B DE R28900 A DER28900 A DE R28900A DE R0028900 A DER0028900 A DE R0028900A DE 1149460 B DE1149460 B DE 1149460B
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- crystal
- tellurium
- zinc
- semiconductor arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 80
- 239000004065 semiconductor Substances 0.000 title claims description 30
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 title claims description 15
- 229910052980 cadmium sulfide Inorganic materials 0.000 title claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 12
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 title claims description 7
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 title claims description 6
- 239000005083 Zinc sulfide Substances 0.000 title claims description 6
- 239000011787 zinc oxide Substances 0.000 title claims description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 title claims description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 title claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 36
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 36
- 230000007547 defect Effects 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 13
- 239000002800 charge carrier Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 238000001894 space-charge-limited current method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000013641 positive control Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 potassium halide Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US847166A US3018426A (en) | 1959-10-19 | 1959-10-19 | Electric contacts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1149460B true DE1149460B (de) | 1963-05-30 |
Family
ID=25299947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DER28900A Pending DE1149460B (de) | 1959-10-19 | 1960-10-14 | Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3018426A (es) |
| DE (1) | DE1149460B (es) |
| GB (1) | GB971942A (es) |
| NL (1) | NL256979A (es) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1279865B (de) * | 1964-03-25 | 1968-10-10 | Nippon Telegraph & Telephone | Halbleiteranordnung |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3330983A (en) * | 1962-07-06 | 1967-07-11 | Gen Electric | Heterojunction electroluminescent devices |
| US3265899A (en) * | 1962-07-25 | 1966-08-09 | Gen Motors Corp | Semiconductor amplifying radiation detector |
| US3309553A (en) * | 1963-08-16 | 1967-03-14 | Varian Associates | Solid state radiation emitters |
| US3510715A (en) * | 1967-08-24 | 1970-05-05 | Westinghouse Electric Corp | Injection-electroluminescent device with graded heterojunctions and method of manufacturing such devices |
| US4213798A (en) * | 1979-04-27 | 1980-07-22 | Rca Corporation | Tellurium schottky barrier contact for amorphous silicon solar cells |
| WO1993023882A1 (en) * | 1992-05-19 | 1993-11-25 | California Institute Of Technology | Wide band-gap semiconductor light emitters |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1035787B (de) * | 1954-08-05 | 1958-08-07 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen, z. B.Flaechen-Transistoren |
| DE1042760B (de) * | 1953-03-23 | 1958-11-06 | Gen Electric | Halbleiteranordnung mit einem Halbleiterkoerper und zwei ohmschen Elektroden an dessen beiden Endflaechen |
| US2865794A (en) * | 1954-12-01 | 1958-12-23 | Philips Corp | Semi-conductor device with telluride containing ohmic contact and method of forming the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1961825A (en) * | 1932-05-10 | 1934-06-05 | Gen Electric | Tellurium alloy rectifier |
| US2854611A (en) * | 1953-05-25 | 1958-09-30 | Rca Corp | Rectifier |
-
0
- NL NL256979D patent/NL256979A/xx unknown
-
1959
- 1959-10-19 US US847166A patent/US3018426A/en not_active Expired - Lifetime
-
1960
- 1960-10-11 GB GB34852/60A patent/GB971942A/en not_active Expired
- 1960-10-14 DE DER28900A patent/DE1149460B/de active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1042760B (de) * | 1953-03-23 | 1958-11-06 | Gen Electric | Halbleiteranordnung mit einem Halbleiterkoerper und zwei ohmschen Elektroden an dessen beiden Endflaechen |
| DE1035787B (de) * | 1954-08-05 | 1958-08-07 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen, z. B.Flaechen-Transistoren |
| US2865794A (en) * | 1954-12-01 | 1958-12-23 | Philips Corp | Semi-conductor device with telluride containing ohmic contact and method of forming the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1279865B (de) * | 1964-03-25 | 1968-10-10 | Nippon Telegraph & Telephone | Halbleiteranordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| GB971942A (en) | 1964-10-07 |
| NL256979A (es) | |
| US3018426A (en) | 1962-01-23 |
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