US2865794A - Semi-conductor device with telluride containing ohmic contact and method of forming the same - Google Patents

Semi-conductor device with telluride containing ohmic contact and method of forming the same Download PDF

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Publication number
US2865794A
US2865794A US550502A US55050255A US2865794A US 2865794 A US2865794 A US 2865794A US 550502 A US550502 A US 550502A US 55050255 A US55050255 A US 55050255A US 2865794 A US2865794 A US 2865794A
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tellurium
semi
ohmic contact
body portion
telluride
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US550502A
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Kroger Ferdinand Anne
Nobel Dirk De
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal

Definitions

  • the invention relates to semi-conductor devices, and especially to the establishment of an ohmic contact to a semi-conductive body of a p-type-conductivity telluride of a bivalent metal.
  • the compounds concerned are the tellurides of Zn, Cd, Hg, Sn and Pb. These compounds may, as is known, exhibit p-type conductivity since, as compared with the correct stoichiometric composition, the anion is contained therein in an excessive quantity, combined or not combined with monovalent cations, for example those of Cu, Ag, Au and the alkaline metals.
  • the incorporation of the tellurium may be due to diffusion or to the fact that a quantity of the semi-conductive compound is dissolved in the melt and recrystallized out subsequent to cooling on an undissolved portion of the body as a layer contaminated or doped by excess tellurium.
  • a non-oxidizing atmosphere suitable for the melting operation may for example be nitrogen or a mixture of nitrogen with a few percent of hydrogen.
  • the fusing time has no effect on the ohmic property of the connection; the tellurium only moves deeper into the semi-conductive body, as the time of treatment is made longer.
  • the tellurium may be applied to the semi-conductive body in various ways, for example by evaporation, by applying a powder, if desired in the form of a paste, or by applying a piece or pellet of tellurium directly.
  • Fig. 1 is a cross-sectional view of the semiconductive body with the tellurium fused thereto
  • Fig. 2 is a flow diagram illustrating the method of the invention.
  • Fig. 1 shows the telluride compound p-type semi-conductive body 10, on the upper surface of which is fused a pellet 11 of tellurium metal.
  • the dotted line area 12 underlying the tellurium metal mass 11 represents the area in which has been in- 2,865,794 Patented Dec. 23, 1958 corporated a large excess of tellurium atoms.
  • This area 12 forms a good ohmic contact to the underlying p-type area 10, and the metal mass 11 forms a good contact with the underlying area 12, thereby establishing the desired connection to the semi-conductive body.
  • Fig. 2 is a flow diagram of the method of the invention, and comprises, as shown, application of the tellurium mass to the semi-conductive body, followed by heating in a non-oxidizing atmosphere to cause the two to fuse together.
  • the tellurium contact according to the invention may for example be provided on a plate or wafer of p-type conductive CdTe by melting down or fusing thereto a pellet of tellurium at 500 C. in a nitrogen atmosphere with 10% of hydrogen for two minutes.
  • the other tellurides referred to above may also be provided with a satisfactory ohmic contact in this manner.
  • the tellurium contact according to the invention may be coated, for example by evaporation, with a metal layer, for example gold.
  • Current supply wires if desired, can be welded directly to the tellurium or be secured thereto by means of soft solder, for example a lead-tin solder.
  • a semi-conductor device comprising a body having a p-type semi-conductive portion consisting essentially of a telluride of a bivalent metal selected from the group con sisting of zinc, cadmium, mercury, tin and lead, and a mass of tellurium fused to said body portion to establish an ohmic contact thereto.
  • a semi-conductor device comprising a semi-conductive body containing a p-type-conductivity region consisting essentially of a compound of tellurium and a metal selected from the group consisting of Zinc, cadmium, mercury, tin and lead, and an excess-telluriumdoped layer portion in said region and constituting an electrical connection thereto.
  • a method of making an ohmic contact to a p-type semi-conductive body portion consisting essentially of a telluride of a metal selected from the group consisting of zinc, cadmium, mercury, tin and lead which comprises contacting said body portion with tellurium metal, and fusing said tellurium to said body portion in a predominantly nitrogen gas atmosphere to incorporate some tellurium in the body portion and thereby establish the ohmic contact.

Description

Dec. 23, 1958 F. A. KROGER ET AL 2,855,794
SEMI-CONDUCTOR DEVICE WITH TELLWIDE CONTAINING OHMIC CONTACT AND METHOD OF FORMING THE SAME Filed Dec. 1, 1955 TELLURIUM METAL P-TYPE TELLURIDE COMPOUND SEM l' CONDUCTOR FIG. I
APPLY TELLURIUM MA$$ TO P- TYPE TELLURIDE BODY HEAT IN NON-OXIDIZING ATMOS- PHERE T0 FUSE TOGETHER FIG. 2
INVENTORS F. A. KROGER BY D. DE NOBEL United States Patent SEMI-CONDUCTOR DEVICE WITH TELLURIDE CONTAINING OHMIC CONTACT AND METH- 0]) OF FORMING THE SAME Ferdinand Anne Kroger and Dirk de Nobel, Eindhoven, Netherlands, assignors, by mesne assignments, to North American Philips Company, Inc., New York, N. Y., a corporation of Delaware Application December 1, 1955, Serial No. 550,502
Claims priority, application Netherlands December 1, 1954 5 Claims. (Cl. 117-200) The invention relates to semi-conductor devices, and especially to the establishment of an ohmic contact to a semi-conductive body of a p-type-conductivity telluride of a bivalent metal.
The compounds concerned are the tellurides of Zn, Cd, Hg, Sn and Pb. These compounds may, as is known, exhibit p-type conductivity since, as compared with the correct stoichiometric composition, the anion is contained therein in an excessive quantity, combined or not combined with monovalent cations, for example those of Cu, Ag, Au and the alkaline metals.
By means of graphite suspensions, silver suspensions converted into a silver layer by heating, and by applying metal layers by evaporation, as a rule, bad contacts are obtained on the said semi-conductive compounds.
In accordance with the invention a satisfactory ohmic contact is obtained on semi-conductive bodies of compounds of the aforesaid type, when tellurium is melted down or fused thereto in a non-oxidizing atmosphere, so that some telluruim is incorporated locally in the semiconductive body to produce therein a region containing an excess of tellurium.
The incorporation of the tellurium may be due to diffusion or to the fact that a quantity of the semi-conductive compound is dissolved in the melt and recrystallized out subsequent to cooling on an undissolved portion of the body as a layer contaminated or doped by excess tellurium.
A non-oxidizing atmosphere suitable for the melting operation may for example be nitrogen or a mixture of nitrogen with a few percent of hydrogen. The fusing time has no effect on the ohmic property of the connection; the tellurium only moves deeper into the semi-conductive body, as the time of treatment is made longer.
The tellurium may be applied to the semi-conductive body in various ways, for example by evaporation, by applying a powder, if desired in the form of a paste, or by applying a piece or pellet of tellurium directly. In the drawing, Fig. 1 is a cross-sectional view of the semiconductive body with the tellurium fused thereto, and Fig. 2 is a flow diagram illustrating the method of the invention.
Referring now to the drawing, Fig. 1 shows the telluride compound p-type semi-conductive body 10, on the upper surface of which is fused a pellet 11 of tellurium metal. The dotted line area 12 underlying the tellurium metal mass 11 represents the area in which has been in- 2,865,794 Patented Dec. 23, 1958 corporated a large excess of tellurium atoms. This area 12 forms a good ohmic contact to the underlying p-type area 10, and the metal mass 11 forms a good contact with the underlying area 12, thereby establishing the desired connection to the semi-conductive body.
Fig. 2 is a flow diagram of the method of the invention, and comprises, as shown, application of the tellurium mass to the semi-conductive body, followed by heating in a non-oxidizing atmosphere to cause the two to fuse together.
The tellurium contact according to the invention may for example be provided on a plate or wafer of p-type conductive CdTe by melting down or fusing thereto a pellet of tellurium at 500 C. in a nitrogen atmosphere with 10% of hydrogen for two minutes. The other tellurides referred to above may also be provided with a satisfactory ohmic contact in this manner.
If desired, the tellurium contact according to the invention may be coated, for example by evaporation, with a metal layer, for example gold. Current supply wires, if desired, can be welded directly to the tellurium or be secured thereto by means of soft solder, for example a lead-tin solder.
What is claimed is:
1. A semi-conductor device comprising a body having a p-type semi-conductive portion consisting essentially of a telluride of a bivalent metal selected from the group con sisting of zinc, cadmium, mercury, tin and lead, and a mass of tellurium fused to said body portion to establish an ohmic contact thereto.
2. A semi-conductor device comprising a semi-conductive body containing a p-type-conductivity region consisting essentially of a compound of tellurium and a metal selected from the group consisting of Zinc, cadmium, mercury, tin and lead, and an excess-telluriumdoped layer portion in said region and constituting an electrical connection thereto.
3. A method of making an ohmic contact to a p-type semi-conductive body portion consisting essentially of a telluride of a metal selected from the group consisting of zinc, cadmium, mercury, tin and lead, which comprises fusing tellurium in contact with said body portion in a non-oxidizing atmosphere to thereby incorporate some tellurium in said body portion.
4. A method of making an ohmic contact to a p-type semi-conductive body portion consisting essentially of a telluride of a metal selected from the group consisting of zinc, cadmium, mercury, tin and lead, which comprises contacting said body portion with tellurium metal, and fusing said tellurium to said body portion in a predominantly nitrogen gas atmosphere to incorporate some tellurium in the body portion and thereby establish the ohmic contact.
5. A method as set forth in claim 4 wherein the tellurium is fused to the body at 500 C. for two minutes.
References Cited in the file of this patent UNITED STATES PATENTS 1,751,361 Ruben Mar. 18, 1930 2,603,693 Kircher July 15, 1952 2,608,611 Shive Aug. 26, 1952 2,790,736 McLaughlin et al. Apr. 30, 1957

Claims (1)

  1. 4. A METHOD OF MAKING AN OHMIC CONTACT TO A P-TYPE SEMI-CONDUCTIVE BODY PORTION CONSISTING ESSENTIALLY OF A TELLURIDE OF A METAL SELECTED FROM THE GROUP CONSISTING OF ZINC, CADMIUM, MERCURY, TIN AND LEAD, WHICH COMPRISES CONTACTING SAID BODY PORTION WITH TELLURIUM METAL, AND FUSING SAID TELLURIUM TO SID BODY PORTION IN A PREDOMINANTLY NITROGEN GAS ATMOSPHERE TO INCORPORATE SOME TELLURIUM IN THE BODY PORTION AND THEREBY ESTABLISH THE OHMIC CONTACT.
US550502A 1954-12-01 1955-12-01 Semi-conductor device with telluride containing ohmic contact and method of forming the same Expired - Lifetime US2865794A (en)

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BE (1) BE543253A (en)
CH (1) CH339990A (en)
DE (1) DE1009311B (en)
FR (1) FR1136613A (en)
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NL (2) NL88273C (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937113A (en) * 1956-05-15 1960-05-17 Siemens Ag Method of producing an electrodecarrying silicon semiconductor device
US3038241A (en) * 1958-12-22 1962-06-12 Sylvania Electric Prod Semiconductor device
US3080261A (en) * 1959-07-13 1963-03-05 Minnesota Mining & Mfg Bonding of lead based alloys to silicate based ceramic members
DE1149460B (en) * 1959-10-19 1963-05-30 Rca Corp Electrical semiconductor arrangement with an intrinsic crystal made of cadmium sulfide, cadmium selenide, zinc sulfide, zinc selenide or zinc oxide
US3188594A (en) * 1962-01-25 1965-06-08 Gen Electric Thermally sensitive resistances
US3232719A (en) * 1962-01-17 1966-02-01 Transitron Electronic Corp Thermoelectric bonding material
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3327137A (en) * 1964-04-10 1967-06-20 Energy Conversion Devices Inc Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US4461785A (en) * 1982-11-19 1984-07-24 E. I. Du Pont De Nemours And Company Process for electrical terminal contact metallization

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1751361A (en) * 1926-06-01 1930-03-18 Ruben Rectifier Corp Electric-current rectifier
US2603693A (en) * 1950-10-10 1952-07-15 Bell Telephone Labor Inc Semiconductor signal translating device
US2608611A (en) * 1949-08-17 1952-08-26 Bell Telephone Labor Inc Selenium rectifier including tellurium and method of making it
US2790736A (en) * 1955-01-31 1957-04-30 Rohm & Haas Methods of making coated paper products and the products obtained

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1751361A (en) * 1926-06-01 1930-03-18 Ruben Rectifier Corp Electric-current rectifier
US2608611A (en) * 1949-08-17 1952-08-26 Bell Telephone Labor Inc Selenium rectifier including tellurium and method of making it
US2603693A (en) * 1950-10-10 1952-07-15 Bell Telephone Labor Inc Semiconductor signal translating device
US2790736A (en) * 1955-01-31 1957-04-30 Rohm & Haas Methods of making coated paper products and the products obtained

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937113A (en) * 1956-05-15 1960-05-17 Siemens Ag Method of producing an electrodecarrying silicon semiconductor device
US3038241A (en) * 1958-12-22 1962-06-12 Sylvania Electric Prod Semiconductor device
US3080261A (en) * 1959-07-13 1963-03-05 Minnesota Mining & Mfg Bonding of lead based alloys to silicate based ceramic members
DE1149460B (en) * 1959-10-19 1963-05-30 Rca Corp Electrical semiconductor arrangement with an intrinsic crystal made of cadmium sulfide, cadmium selenide, zinc sulfide, zinc selenide or zinc oxide
US3232719A (en) * 1962-01-17 1966-02-01 Transitron Electronic Corp Thermoelectric bonding material
US3188594A (en) * 1962-01-25 1965-06-08 Gen Electric Thermally sensitive resistances
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3327137A (en) * 1964-04-10 1967-06-20 Energy Conversion Devices Inc Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US4461785A (en) * 1982-11-19 1984-07-24 E. I. Du Pont De Nemours And Company Process for electrical terminal contact metallization

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CH339990A (en) 1959-07-31
DE1009311B (en) 1957-05-29
BE543253A (en)
NL192839A (en)
FR1136613A (en) 1957-05-16
GB789338A (en) 1958-01-22
NL88273C (en)

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