DE1149460B - Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd - Google Patents

Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd

Info

Publication number
DE1149460B
DE1149460B DER28900A DER0028900A DE1149460B DE 1149460 B DE1149460 B DE 1149460B DE R28900 A DER28900 A DE R28900A DE R0028900 A DER0028900 A DE R0028900A DE 1149460 B DE1149460 B DE 1149460B
Authority
DE
Germany
Prior art keywords
electrode
crystal
tellurium
zinc
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DER28900A
Other languages
German (de)
English (en)
Inventor
Wolfgang Ruppel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1149460B publication Critical patent/DE1149460B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
DER28900A 1959-10-19 1960-10-14 Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd Pending DE1149460B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US847166A US3018426A (en) 1959-10-19 1959-10-19 Electric contacts

Publications (1)

Publication Number Publication Date
DE1149460B true DE1149460B (de) 1963-05-30

Family

ID=25299947

Family Applications (1)

Application Number Title Priority Date Filing Date
DER28900A Pending DE1149460B (de) 1959-10-19 1960-10-14 Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd

Country Status (4)

Country Link
US (1) US3018426A (enrdf_load_stackoverflow)
DE (1) DE1149460B (enrdf_load_stackoverflow)
GB (1) GB971942A (enrdf_load_stackoverflow)
NL (1) NL256979A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1244987B (de) * 1963-12-24 1967-07-20 Hughes Aircraft Co Verfahren zur Herstellung einer Halbleiteranordnung
DE1279865B (de) * 1964-03-25 1968-10-10 Nippon Telegraph & Telephone Halbleiteranordnung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330983A (en) * 1962-07-06 1967-07-11 Gen Electric Heterojunction electroluminescent devices
US3265899A (en) * 1962-07-25 1966-08-09 Gen Motors Corp Semiconductor amplifying radiation detector
US3309553A (en) * 1963-08-16 1967-03-14 Varian Associates Solid state radiation emitters
US3510715A (en) * 1967-08-24 1970-05-05 Westinghouse Electric Corp Injection-electroluminescent device with graded heterojunctions and method of manufacturing such devices
US4213798A (en) * 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
WO1993023882A1 (en) * 1992-05-19 1993-11-25 California Institute Of Technology Wide band-gap semiconductor light emitters

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1035787B (de) * 1954-08-05 1958-08-07 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen, z. B.Flaechen-Transistoren
DE1042760B (de) * 1953-03-23 1958-11-06 Gen Electric Halbleiteranordnung mit einem Halbleiterkoerper und zwei ohmschen Elektroden an dessen beiden Endflaechen
US2865794A (en) * 1954-12-01 1958-12-23 Philips Corp Semi-conductor device with telluride containing ohmic contact and method of forming the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1961825A (en) * 1932-05-10 1934-06-05 Gen Electric Tellurium alloy rectifier
US2854611A (en) * 1953-05-25 1958-09-30 Rca Corp Rectifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1042760B (de) * 1953-03-23 1958-11-06 Gen Electric Halbleiteranordnung mit einem Halbleiterkoerper und zwei ohmschen Elektroden an dessen beiden Endflaechen
DE1035787B (de) * 1954-08-05 1958-08-07 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen, z. B.Flaechen-Transistoren
US2865794A (en) * 1954-12-01 1958-12-23 Philips Corp Semi-conductor device with telluride containing ohmic contact and method of forming the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1244987B (de) * 1963-12-24 1967-07-20 Hughes Aircraft Co Verfahren zur Herstellung einer Halbleiteranordnung
DE1279865B (de) * 1964-03-25 1968-10-10 Nippon Telegraph & Telephone Halbleiteranordnung

Also Published As

Publication number Publication date
NL256979A (enrdf_load_stackoverflow)
US3018426A (en) 1962-01-23
GB971942A (en) 1964-10-07

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