DE1148661B - Verfahren zur Herstellung von Halbleiteranordnungen mit einlegiertem pn-UEbergang - Google Patents
Verfahren zur Herstellung von Halbleiteranordnungen mit einlegiertem pn-UEbergangInfo
- Publication number
- DE1148661B DE1148661B DES63187A DES0063187A DE1148661B DE 1148661 B DE1148661 B DE 1148661B DE S63187 A DES63187 A DE S63187A DE S0063187 A DES0063187 A DE S0063187A DE 1148661 B DE1148661 B DE 1148661B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- alloyed
- junction
- crystal
- crystal lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000013078 crystal Substances 0.000 claims description 20
- 238000005275 alloying Methods 0.000 claims description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 description 10
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000012190 activator Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
- B63H—MARINE PROPULSION OR STEERING
- B63H11/00—Marine propulsion by water jets
- B63H11/02—Marine propulsion by water jets the propulsive medium being ambient water
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
- B63H—MARINE PROPULSION OR STEERING
- B63H11/00—Marine propulsion by water jets
- B63H11/02—Marine propulsion by water jets the propulsive medium being ambient water
- B63H11/04—Marine propulsion by water jets the propulsive medium being ambient water by means of pumps
- B63H11/08—Marine propulsion by water jets the propulsive medium being ambient water by means of pumps of rotary type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- Ocean & Marine Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL250885D NL250885A (enrdf_load_stackoverflow) | 1959-05-29 | ||
| DES63187A DE1148661B (de) | 1959-05-29 | 1959-05-29 | Verfahren zur Herstellung von Halbleiteranordnungen mit einlegiertem pn-UEbergang |
| FR822209A FR1251866A (fr) | 1959-05-29 | 1960-03-23 | Procédé de fabrication de dispositifs semi-conducteurs |
| CH535060A CH389781A (de) | 1959-05-29 | 1960-05-10 | Verfahren zur Herstellung von Halbleiteranordnungen |
| GB18321/60A GB937497A (en) | 1959-05-29 | 1960-05-24 | Improvements in or relating to processes for the production of semi-conductor arrangements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES63187A DE1148661B (de) | 1959-05-29 | 1959-05-29 | Verfahren zur Herstellung von Halbleiteranordnungen mit einlegiertem pn-UEbergang |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1148661B true DE1148661B (de) | 1963-05-16 |
Family
ID=7496195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES63187A Pending DE1148661B (de) | 1959-05-29 | 1959-05-29 | Verfahren zur Herstellung von Halbleiteranordnungen mit einlegiertem pn-UEbergang |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH389781A (enrdf_load_stackoverflow) |
| DE (1) | DE1148661B (enrdf_load_stackoverflow) |
| GB (1) | GB937497A (enrdf_load_stackoverflow) |
| NL (1) | NL250885A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1266404B (de) * | 1964-12-01 | 1968-04-18 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelementes |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1109535A (fr) * | 1954-07-30 | 1956-01-30 | Csf | Perfectionnements aux procédés de fabrication des jonctions nu-p |
-
0
- NL NL250885D patent/NL250885A/xx unknown
-
1959
- 1959-05-29 DE DES63187A patent/DE1148661B/de active Pending
-
1960
- 1960-05-10 CH CH535060A patent/CH389781A/de unknown
- 1960-05-24 GB GB18321/60A patent/GB937497A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1109535A (fr) * | 1954-07-30 | 1956-01-30 | Csf | Perfectionnements aux procédés de fabrication des jonctions nu-p |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1266404B (de) * | 1964-12-01 | 1968-04-18 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelementes |
| DE1266404C2 (de) * | 1964-12-01 | 1968-11-07 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelementes |
Also Published As
| Publication number | Publication date |
|---|---|
| GB937497A (en) | 1963-09-25 |
| NL250885A (enrdf_load_stackoverflow) | |
| CH389781A (de) | 1965-03-31 |
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