DE1144850B - Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform - Google Patents
Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer LegierungsformInfo
- Publication number
- DE1144850B DE1144850B DES59838A DES0059838A DE1144850B DE 1144850 B DE1144850 B DE 1144850B DE S59838 A DES59838 A DE S59838A DE S0059838 A DES0059838 A DE S0059838A DE 1144850 B DE1144850 B DE 1144850B
- Authority
- DE
- Germany
- Prior art keywords
- metal
- doping
- semiconductor body
- semiconductor
- pill
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 13
- 239000000956 alloy Substances 0.000 title description 4
- 229910045601 alloy Inorganic materials 0.000 title description 4
- 239000000463 material Substances 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 21
- 239000006187 pill Substances 0.000 claims description 17
- 239000000945 filler Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL242858D NL242858A (enrdf_load_stackoverflow) | 1958-09-15 | ||
| DES59838A DE1144850B (de) | 1958-09-15 | 1958-09-15 | Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform |
| FR802426A FR1232135A (fr) | 1958-09-15 | 1959-08-08 | Procédé pour doper une zone d'un corps semi-conducteur |
| CH7796059A CH374120A (de) | 1958-09-15 | 1959-09-08 | Verfahren zum Dotieren einer Zone eines Halbleiterkörpers |
| GB3107259A GB881936A (en) | 1958-09-15 | 1959-09-11 | A method of doping a semi-conductor body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES59838A DE1144850B (de) | 1958-09-15 | 1958-09-15 | Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1144850B true DE1144850B (de) | 1963-03-07 |
Family
ID=7493622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES59838A Pending DE1144850B (de) | 1958-09-15 | 1958-09-15 | Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH374120A (enrdf_load_stackoverflow) |
| DE (1) | DE1144850B (enrdf_load_stackoverflow) |
| FR (1) | FR1232135A (enrdf_load_stackoverflow) |
| GB (1) | GB881936A (enrdf_load_stackoverflow) |
| NL (1) | NL242858A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1088286A (fr) * | 1952-08-14 | 1955-03-04 | Sylvania Electric Prod | Dispositifs semi-conducteurs à jonction de surface |
-
0
- NL NL242858D patent/NL242858A/xx unknown
-
1958
- 1958-09-15 DE DES59838A patent/DE1144850B/de active Pending
-
1959
- 1959-08-08 FR FR802426A patent/FR1232135A/fr not_active Expired
- 1959-09-08 CH CH7796059A patent/CH374120A/de unknown
- 1959-09-11 GB GB3107259A patent/GB881936A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1088286A (fr) * | 1952-08-14 | 1955-03-04 | Sylvania Electric Prod | Dispositifs semi-conducteurs à jonction de surface |
Also Published As
| Publication number | Publication date |
|---|---|
| CH374120A (de) | 1963-12-31 |
| GB881936A (en) | 1961-11-08 |
| FR1232135A (fr) | 1960-10-05 |
| NL242858A (enrdf_load_stackoverflow) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE740235C (de) | Vorrichtung zur Glaettung der Oberflaeche von gewalzten Stangen oder Draehten | |
| DE69504752T2 (de) | Schleifneutralisierender Ring | |
| DE2138751A1 (de) | Vorrichtung zur Behandlung eines flussigen Metalls, insbesondere von Alu minium | |
| DE2414982B2 (enrdf_load_stackoverflow) | ||
| DE1208477B (de) | Verfahren und Vorrichtung zum Herstellen von Hohlstraengen aus thermoplastischem Werkstoff | |
| DE3424276C2 (enrdf_load_stackoverflow) | ||
| DE2931432C2 (de) | Verfahren zum Eindiffundieren von Aluminium in Silizium-Halbleiterscheiben | |
| DE2333136A1 (de) | Verfahren und vorrichtung zum herstellen eines sintermetallerzeugnisses | |
| DE69602867T2 (de) | Vorrichtung und Verfahren zum Herstellen von Drahtelektroden zum funkenerosiven Schneiden | |
| DE1144850B (de) | Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform | |
| DE69110328T2 (de) | Thalliumoxidsupraleiter und Verfahren zu dessen Herstellung. | |
| DE2336406A1 (de) | Verfahren zum gleichzeitigen ziehen einer mehrzahl von draehten und langtraeger zur durchfuehrung desselben | |
| DE2743787A1 (de) | Vorrichtung zur kuehlung von pressstoesseln | |
| DE1771387A1 (de) | Verfahren zur elektrolytischen Ablagerung von Werkstoff | |
| DE895474C (de) | Verfahren zum Schmelzen hochgereinigter Substanzen | |
| EP0345541A2 (de) | Verfahren zum Herstellen eines Kalt-Schmelz-Tiegels | |
| DE1265358B (de) | Verfahren und Maschine zum Herstellen eines mit einem Hals versehenen Kolbens aus einem Rohrglasstueck | |
| DE1696016A1 (de) | Anlage zur Herstellung von Flachglas | |
| DE1277446B (de) | Verfahren zum Herstellen von Halbleiterbauelementen mit vollstaendig gekapseltem Halbleiterelement | |
| DE2553087A1 (de) | Form zum kontinuierlichen giessen von metall | |
| DE1558345A1 (de) | Verfahren und Vorrichtung zum Abfuehlen und Messen von Beulen an Gussstrangen | |
| DE1146206B (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| AT229372B (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE937108C (de) | Mehrteilige Spinnduese mit keramischer Spinnbodenplatte und Verfahren zur Herstellung der Spinnkanaele in den Duesenbodenplatten | |
| DE2753052A1 (de) | Verfahren zur erzeugung von geschmolzenem eisen oder stahl |