DE1144416B - Phototransistor - Google Patents

Phototransistor

Info

Publication number
DE1144416B
DE1144416B DEN18873A DEN0018873A DE1144416B DE 1144416 B DE1144416 B DE 1144416B DE N18873 A DEN18873 A DE N18873A DE N0018873 A DEN0018873 A DE N0018873A DE 1144416 B DE1144416 B DE 1144416B
Authority
DE
Germany
Prior art keywords
phototransistor
electrode
light
incidence
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN18873A
Other languages
German (de)
English (en)
Inventor
Henri Herman Jean Marie Gradus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1144416B publication Critical patent/DE1144416B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Weting (AREA)
DEN18873A 1959-09-11 1960-09-07 Phototransistor Pending DE1144416B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL243273 1959-09-11

Publications (1)

Publication Number Publication Date
DE1144416B true DE1144416B (de) 1963-02-28

Family

ID=19751912

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN18873A Pending DE1144416B (de) 1959-09-11 1960-09-07 Phototransistor

Country Status (5)

Country Link
US (1) US3210622A (enExample)
JP (1) JPS3621289B1 (enExample)
DE (1) DE1144416B (enExample)
FR (1) FR1267056A (enExample)
GB (1) GB957950A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219120B (de) * 1963-05-27 1966-06-16 Ibm Elektrolumineszente PN-Halbleiterdiode

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3296502A (en) * 1962-11-28 1967-01-03 Gen Instrument Corp Variable photosensitive semiconductor device having a graduatingly different operable surface area
US3535532A (en) * 1964-06-29 1970-10-20 Texas Instruments Inc Integrated circuit including light source,photodiode and associated components
US3435236A (en) * 1967-03-21 1969-03-25 Us Air Force High ohmic semiconductor tuned narrow bandpass barrier photodiode
CH567803A5 (enExample) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
US5150182A (en) * 1988-06-07 1992-09-22 The Boeing Company Semiconductor device enhanced for optical interaction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
DE826324C (de) * 1949-04-06 1951-12-27 Western Electric Co Photoelektrische Vorrichtung mit einem Koerper aus Halbleitermaterial
US2669635A (en) * 1952-11-13 1954-02-16 Bell Telephone Labor Inc Semiconductive photoelectric transducer
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2629802A (en) * 1951-12-07 1953-02-24 Rca Corp Photocell amplifier construction
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
NL99619C (enExample) * 1955-06-28
NL235086A (enExample) * 1958-02-22 1900-01-01

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
DE826324C (de) * 1949-04-06 1951-12-27 Western Electric Co Photoelektrische Vorrichtung mit einem Koerper aus Halbleitermaterial
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2669635A (en) * 1952-11-13 1954-02-16 Bell Telephone Labor Inc Semiconductive photoelectric transducer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219120B (de) * 1963-05-27 1966-06-16 Ibm Elektrolumineszente PN-Halbleiterdiode

Also Published As

Publication number Publication date
GB957950A (en) 1964-05-13
JPS3621289B1 (enExample) 1961-11-06
US3210622A (en) 1965-10-05
FR1267056A (fr) 1961-07-17

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