FR1267056A - Photo-transistron - Google Patents

Photo-transistron

Info

Publication number
FR1267056A
FR1267056A FR838254A FR838254A FR1267056A FR 1267056 A FR1267056 A FR 1267056A FR 838254 A FR838254 A FR 838254A FR 838254 A FR838254 A FR 838254A FR 1267056 A FR1267056 A FR 1267056A
Authority
FR
France
Prior art keywords
transistron
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR838254A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1267056A publication Critical patent/FR1267056A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
FR838254A 1959-09-11 1960-09-09 Photo-transistron Expired FR1267056A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL243273 1959-09-11

Publications (1)

Publication Number Publication Date
FR1267056A true FR1267056A (fr) 1961-07-17

Family

ID=19751912

Family Applications (1)

Application Number Title Priority Date Filing Date
FR838254A Expired FR1267056A (fr) 1959-09-11 1960-09-09 Photo-transistron

Country Status (5)

Country Link
US (1) US3210622A (enExample)
JP (1) JPS3621289B1 (enExample)
DE (1) DE1144416B (enExample)
FR (1) FR1267056A (enExample)
GB (1) GB957950A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3296502A (en) * 1962-11-28 1967-01-03 Gen Instrument Corp Variable photosensitive semiconductor device having a graduatingly different operable surface area
US3283207A (en) * 1963-05-27 1966-11-01 Ibm Light-emitting transistor system
US3535532A (en) * 1964-06-29 1970-10-20 Texas Instruments Inc Integrated circuit including light source,photodiode and associated components
US3435236A (en) * 1967-03-21 1969-03-25 Us Air Force High ohmic semiconductor tuned narrow bandpass barrier photodiode
CH567803A5 (enExample) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
US5150182A (en) * 1988-06-07 1992-09-22 The Boeing Company Semiconductor device enhanced for optical interaction

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
IT454648A (enExample) * 1949-04-06
US2629802A (en) * 1951-12-07 1953-02-24 Rca Corp Photocell amplifier construction
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2669635A (en) * 1952-11-13 1954-02-16 Bell Telephone Labor Inc Semiconductive photoelectric transducer
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
NL99619C (enExample) * 1955-06-28
NL235086A (enExample) * 1958-02-22 1900-01-01

Also Published As

Publication number Publication date
DE1144416B (de) 1963-02-28
GB957950A (en) 1964-05-13
JPS3621289B1 (enExample) 1961-11-06
US3210622A (en) 1965-10-05

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