GB957950A - Improvements in photo-transistors - Google Patents
Improvements in photo-transistorsInfo
- Publication number
- GB957950A GB957950A GB30983/60A GB3098360A GB957950A GB 957950 A GB957950 A GB 957950A GB 30983/60 A GB30983/60 A GB 30983/60A GB 3098360 A GB3098360 A GB 3098360A GB 957950 A GB957950 A GB 957950A
- Authority
- GB
- United Kingdom
- Prior art keywords
- collector
- emitter
- electrode
- etching
- sept
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 230000005855 radiation Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 238000000866 electrolytic etching Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- RJAVVKVGAZUUIE-UHFFFAOYSA-N stibanylidynephosphane Chemical compound [Sb]#P RJAVVKVGAZUUIE-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL243273 | 1959-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB957950A true GB957950A (en) | 1964-05-13 |
Family
ID=19751912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30983/60A Expired GB957950A (en) | 1959-09-11 | 1960-09-08 | Improvements in photo-transistors |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3210622A (enExample) |
| JP (1) | JPS3621289B1 (enExample) |
| DE (1) | DE1144416B (enExample) |
| FR (1) | FR1267056A (enExample) |
| GB (1) | GB957950A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3296502A (en) * | 1962-11-28 | 1967-01-03 | Gen Instrument Corp | Variable photosensitive semiconductor device having a graduatingly different operable surface area |
| US3283207A (en) * | 1963-05-27 | 1966-11-01 | Ibm | Light-emitting transistor system |
| US3535532A (en) * | 1964-06-29 | 1970-10-20 | Texas Instruments Inc | Integrated circuit including light source,photodiode and associated components |
| US3435236A (en) * | 1967-03-21 | 1969-03-25 | Us Air Force | High ohmic semiconductor tuned narrow bandpass barrier photodiode |
| CH567803A5 (enExample) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie | |
| US5150182A (en) * | 1988-06-07 | 1992-09-22 | The Boeing Company | Semiconductor device enhanced for optical interaction |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2402662A (en) * | 1941-05-27 | 1946-06-25 | Bell Telephone Labor Inc | Light-sensitive electric device |
| IT454648A (enExample) * | 1949-04-06 | |||
| US2629802A (en) * | 1951-12-07 | 1953-02-24 | Rca Corp | Photocell amplifier construction |
| US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
| US2669635A (en) * | 1952-11-13 | 1954-02-16 | Bell Telephone Labor Inc | Semiconductive photoelectric transducer |
| US2705767A (en) * | 1952-11-18 | 1955-04-05 | Gen Electric | P-n junction transistor |
| US2846346A (en) * | 1954-03-26 | 1958-08-05 | Philco Corp | Semiconductor device |
| NL99619C (enExample) * | 1955-06-28 | |||
| NL235086A (enExample) * | 1958-02-22 | 1900-01-01 |
-
1960
- 1960-09-06 US US54237A patent/US3210622A/en not_active Expired - Lifetime
- 1960-09-07 DE DEN18873A patent/DE1144416B/de active Pending
- 1960-09-08 GB GB30983/60A patent/GB957950A/en not_active Expired
- 1960-09-09 JP JP3750060A patent/JPS3621289B1/ja active Pending
- 1960-09-09 FR FR838254A patent/FR1267056A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1144416B (de) | 1963-02-28 |
| JPS3621289B1 (enExample) | 1961-11-06 |
| FR1267056A (fr) | 1961-07-17 |
| US3210622A (en) | 1965-10-05 |
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