GB957950A - Improvements in photo-transistors - Google Patents

Improvements in photo-transistors

Info

Publication number
GB957950A
GB957950A GB30983/60A GB3098360A GB957950A GB 957950 A GB957950 A GB 957950A GB 30983/60 A GB30983/60 A GB 30983/60A GB 3098360 A GB3098360 A GB 3098360A GB 957950 A GB957950 A GB 957950A
Authority
GB
United Kingdom
Prior art keywords
collector
emitter
electrode
etching
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30983/60A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB957950A publication Critical patent/GB957950A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Weting (AREA)
GB30983/60A 1959-09-11 1960-09-08 Improvements in photo-transistors Expired GB957950A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL243273 1959-09-11

Publications (1)

Publication Number Publication Date
GB957950A true GB957950A (en) 1964-05-13

Family

ID=19751912

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30983/60A Expired GB957950A (en) 1959-09-11 1960-09-08 Improvements in photo-transistors

Country Status (5)

Country Link
US (1) US3210622A (enExample)
JP (1) JPS3621289B1 (enExample)
DE (1) DE1144416B (enExample)
FR (1) FR1267056A (enExample)
GB (1) GB957950A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3296502A (en) * 1962-11-28 1967-01-03 Gen Instrument Corp Variable photosensitive semiconductor device having a graduatingly different operable surface area
US3283207A (en) * 1963-05-27 1966-11-01 Ibm Light-emitting transistor system
US3535532A (en) * 1964-06-29 1970-10-20 Texas Instruments Inc Integrated circuit including light source,photodiode and associated components
US3435236A (en) * 1967-03-21 1969-03-25 Us Air Force High ohmic semiconductor tuned narrow bandpass barrier photodiode
CH567803A5 (enExample) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
US5150182A (en) * 1988-06-07 1992-09-22 The Boeing Company Semiconductor device enhanced for optical interaction

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
BE489417A (enExample) * 1949-04-06
US2629802A (en) * 1951-12-07 1953-02-24 Rca Corp Photocell amplifier construction
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2669635A (en) * 1952-11-13 1954-02-16 Bell Telephone Labor Inc Semiconductive photoelectric transducer
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
NL99619C (enExample) * 1955-06-28
NL235086A (enExample) * 1958-02-22 1900-01-01

Also Published As

Publication number Publication date
JPS3621289B1 (enExample) 1961-11-06
DE1144416B (de) 1963-02-28
US3210622A (en) 1965-10-05
FR1267056A (fr) 1961-07-17

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