DE1142419B - Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren von pn-UEbergaengen - Google Patents

Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren von pn-UEbergaengen

Info

Publication number
DE1142419B
DE1142419B DER31169A DER0031169A DE1142419B DE 1142419 B DE1142419 B DE 1142419B DE R31169 A DER31169 A DE R31169A DE R0031169 A DER0031169 A DE R0031169A DE 1142419 B DE1142419 B DE 1142419B
Authority
DE
Germany
Prior art keywords
alloying
semiconductor
electrode
bead
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DER31169A
Other languages
German (de)
English (en)
Inventor
Richard Lee Huntington
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1142419B publication Critical patent/DE1142419B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DER31169A 1960-09-27 1961-09-26 Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren von pn-UEbergaengen Pending DE1142419B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58781A US3086892A (en) 1960-09-27 1960-09-27 Semiconductor devices and method of making same

Publications (1)

Publication Number Publication Date
DE1142419B true DE1142419B (de) 1963-01-17

Family

ID=22018886

Family Applications (1)

Application Number Title Priority Date Filing Date
DER31169A Pending DE1142419B (de) 1960-09-27 1961-09-26 Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren von pn-UEbergaengen

Country Status (4)

Country Link
US (1) US3086892A (https=)
DE (1) DE1142419B (https=)
GB (1) GB1001154A (https=)
NL (1) NL269600A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3192081A (en) * 1961-07-20 1965-06-29 Raytheon Co Method of fusing material and the like
US3242007A (en) * 1961-11-15 1966-03-22 Texas Instruments Inc Pyrolytic deposition of protective coatings of semiconductor surfaces
US3295029A (en) * 1963-04-03 1966-12-27 Gen Electric Field effect semiconductor device with polar polymer covered oxide coating
US4041190A (en) * 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
US4230773A (en) * 1978-12-04 1980-10-28 International Business Machines Corporation Decreasing the porosity and surface roughness of ceramic substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2731704A (en) * 1952-12-27 1956-01-24 Raytheon Mfg Co Method of making transistors
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
GB827068A (en) * 1955-05-27 1960-02-03 Gen Electric Co Ltd Improvements in or relating to semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE533003A (https=) * 1953-11-02
US2832702A (en) * 1955-08-18 1958-04-29 Hughes Aircraft Co Method of treating semiconductor bodies for translating devices
US2932594A (en) * 1956-09-17 1960-04-12 Rca Corp Method of making surface alloy junctions in semiconductor bodies
US2913538A (en) * 1956-10-16 1959-11-17 Genevay Jacques Automatically repeating talking machine

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
US2731704A (en) * 1952-12-27 1956-01-24 Raytheon Mfg Co Method of making transistors
GB827068A (en) * 1955-05-27 1960-02-03 Gen Electric Co Ltd Improvements in or relating to semiconductor devices

Also Published As

Publication number Publication date
US3086892A (en) 1963-04-23
GB1001154A (en) 1965-08-11
NL269600A (https=) 1900-01-01

Similar Documents

Publication Publication Date Title
DE2805910A1 (de) Halbleitersystem und verfahren zu seiner herstellung
DE2006189A1 (de) Verfahren zum Aufbringen aufeinanderfolgender Epitaxialschichten aus kristallinem Halbleitermaterial auf ein Substrat aus der Flüssigkeitsphase
DE2229457B2 (de) Verfahren zum Herstellen eines Halbleiterbauelements
DE2031333C3 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE2215357A1 (de) Verfahren zum Herstellen eines intermetallischen Kontakts an einem Halbleiterbauteil
DE1073632B (de) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung
DE1544214A1 (de) Verfahren zum Zuechten von duennen,schwach dotierten homogenen epitaktischen Siliziumschichten bei niedrigen Temperaturen,insbesondere zum Herstellen von UEbergaengen mit extrem niedrigem Widerstand in Flussrichtung
DE2450907A1 (de) Verfahren zum herstellen von tiefen dioden
DE2450930A1 (de) Thermische wanderung metallreicher fluessiger draehte durch halbleitermaterialien
DE1964979A1 (de) Halbleitervorrichtung mit einem lateralen Transistor
DE2523055A1 (de) Minoritaetstraeger-trennzonen fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
DE1142419B (de) Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren von pn-UEbergaengen
DE2448015A1 (de) Bidirektionale thyristortriode mit gold-diffundierter grenzschicht
DE1496545A1 (de) Glasgemenge,insbesondere als Material fuer Passivierungs- und Schutzschichten fuer Festkoerperbauelemente
DE2439535A1 (de) Verfahren zum eindiffundieren aktiver stoerelemente in halbleitermaterialien
DE2142342A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1260032B (de) Verfahren zur Bildung einer gleichrichtenden Sperrschicht in einem Halbleiterscheibchen
DE2537327A1 (de) Halbleiterbauelement mit einem pn- uebergang gleichfoermiger stromdichteverteilung und verfahren zum herstellen eines solchen halbleiterbauelements
DE1961230C3 (de) Verfahren zum Passivieren eines PN-Übergänge aufweisenden Halbleiterkörpers und Anwendung des Verfahrens zur Herstellung eines Halbleiterbauelements
DE1816082B2 (https=)
DE1514656A1 (de) Verfahren zum Herstellen von Halbleiterkoerpern
DE3831555A1 (de) Verfahren zum herstellen einer halbleitervorrichtung
DE2007752A1 (de) Verfahren zum Herstellen von diffun dierten Halbleiterbauelementen unter Ver Wendung von festen Dotierstoffquellen
DE2316096B2 (de) Verfahren zur Herstellung von integrierten Schaltungen mit Feldeffekttransistoren unterschiedlichen Leltungszustandes
DE1614553C3 (de) Verfahren zum Herstellen eines Germanium-Planartransistors