DE1126998B - Verfahren zur Herstellung einer Tunneldiode - Google Patents

Verfahren zur Herstellung einer Tunneldiode

Info

Publication number
DE1126998B
DE1126998B DEST16520A DEST016520A DE1126998B DE 1126998 B DE1126998 B DE 1126998B DE ST16520 A DEST16520 A DE ST16520A DE ST016520 A DEST016520 A DE ST016520A DE 1126998 B DE1126998 B DE 1126998B
Authority
DE
Germany
Prior art keywords
highly doped
alloyed
layer
pill
redoping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEST16520A
Other languages
German (de)
English (en)
Inventor
Dipl-Phys Dr Micha Michelitsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent Deutschland AG
Original Assignee
Standard Elektrik Lorenz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL265169D priority Critical patent/NL265169A/xx
Application filed by Standard Elektrik Lorenz AG filed Critical Standard Elektrik Lorenz AG
Priority to DEST16520A priority patent/DE1126998B/de
Priority to GB1846461A priority patent/GB972839A/en
Priority to FR862830A priority patent/FR1289987A/fr
Priority to BE609329A priority patent/BE609329A/fr
Publication of DE1126998B publication Critical patent/DE1126998B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
DEST16520A 1960-05-25 1960-05-25 Verfahren zur Herstellung einer Tunneldiode Pending DE1126998B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL265169D NL265169A (xx) 1960-05-25
DEST16520A DE1126998B (de) 1960-05-25 1960-05-25 Verfahren zur Herstellung einer Tunneldiode
GB1846461A GB972839A (en) 1960-05-25 1961-05-19 Tunnel diode for very high frequencies
FR862830A FR1289987A (fr) 1960-05-25 1961-05-25 Perfectionnements aux diodes tunnel et à leur fabrication
BE609329A BE609329A (fr) 1960-05-25 1961-10-19 Perfectionnements aux diodes tunnel et à leur fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEST16520A DE1126998B (de) 1960-05-25 1960-05-25 Verfahren zur Herstellung einer Tunneldiode

Publications (1)

Publication Number Publication Date
DE1126998B true DE1126998B (de) 1962-04-05

Family

ID=7457109

Family Applications (1)

Application Number Title Priority Date Filing Date
DEST16520A Pending DE1126998B (de) 1960-05-25 1960-05-25 Verfahren zur Herstellung einer Tunneldiode

Country Status (3)

Country Link
DE (1) DE1126998B (xx)
GB (1) GB972839A (xx)
NL (1) NL265169A (xx)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT193944B (de) * 1955-06-20 1957-12-10 Western Electric Co Verfahren zur Herstellung einer Halbleitereinrichtung
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
AT193944B (de) * 1955-06-20 1957-12-10 Western Electric Co Verfahren zur Herstellung einer Halbleitereinrichtung

Also Published As

Publication number Publication date
NL265169A (xx)
GB972839A (en) 1964-10-21

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