DE112023004843T5 - Oxidhalbleiterfilm, dünnschichttransistor und elektronische vorrichtung - Google Patents
Oxidhalbleiterfilm, dünnschichttransistor und elektronische vorrichtungInfo
- Publication number
- DE112023004843T5 DE112023004843T5 DE112023004843.6T DE112023004843T DE112023004843T5 DE 112023004843 T5 DE112023004843 T5 DE 112023004843T5 DE 112023004843 T DE112023004843 T DE 112023004843T DE 112023004843 T5 DE112023004843 T5 DE 112023004843T5
- Authority
- DE
- Germany
- Prior art keywords
- oxide semiconductor
- film
- semiconductor film
- equal
- peak
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-006862 | 2023-01-19 | ||
| JP2023006862 | 2023-01-19 | ||
| PCT/JP2023/046219 WO2024154544A1 (ja) | 2023-01-19 | 2023-12-22 | 酸化物半導体膜、薄膜トランジスタ、および電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112023004843T5 true DE112023004843T5 (de) | 2025-09-11 |
Family
ID=91955834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112023004843.6T Pending DE112023004843T5 (de) | 2023-01-19 | 2023-12-22 | Oxidhalbleiterfilm, dünnschichttransistor und elektronische vorrichtung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20260006848A1 (https=) |
| JP (1) | JPWO2024154544A1 (https=) |
| KR (1) | KR20250110870A (https=) |
| CN (1) | CN120513703A (https=) |
| DE (1) | DE112023004843T5 (https=) |
| TW (1) | TW202445878A (https=) |
| WO (1) | WO2024154544A1 (https=) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120091026A (ko) * | 2009-09-30 | 2012-08-17 | 이데미쓰 고산 가부시키가이샤 | Ｉｎ-Ｇａ-Ｚｎ-Ｏ계 산화물 소결체 |
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5189674B2 (ja) * | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
| JP6143423B2 (ja) * | 2012-04-16 | 2017-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| KR102492209B1 (ko) * | 2016-05-19 | 2023-01-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 산화물 반도체 및 트랜지스터 |
| CN110718468B (zh) * | 2019-09-26 | 2022-08-02 | 深圳大学 | 一种钐掺杂的金属氧化物薄膜晶体管及其制备方法和应用 |
-
2023
- 2023-12-22 CN CN202380086602.0A patent/CN120513703A/zh active Pending
- 2023-12-22 WO PCT/JP2023/046219 patent/WO2024154544A1/ja not_active Ceased
- 2023-12-22 JP JP2024571676A patent/JPWO2024154544A1/ja active Pending
- 2023-12-22 DE DE112023004843.6T patent/DE112023004843T5/de active Pending
- 2023-12-22 KR KR1020257019624A patent/KR20250110870A/ko active Pending
-
2024
- 2024-01-09 TW TW113100878A patent/TW202445878A/zh unknown
-
2025
- 2025-07-07 US US19/260,713 patent/US20260006848A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20260006848A1 (en) | 2026-01-01 |
| KR20250110870A (ko) | 2025-07-21 |
| JPWO2024154544A1 (https=) | 2024-07-25 |
| CN120513703A (zh) | 2025-08-19 |
| TW202445878A (zh) | 2024-11-16 |
| WO2024154544A1 (ja) | 2024-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed |