KR20250110870A - 산화물 반도체막, 박막 트랜지스터 및 전자 기기 - Google Patents
산화물 반도체막, 박막 트랜지스터 및 전자 기기Info
- Publication number
- KR20250110870A KR20250110870A KR1020257019624A KR20257019624A KR20250110870A KR 20250110870 A KR20250110870 A KR 20250110870A KR 1020257019624 A KR1020257019624 A KR 1020257019624A KR 20257019624 A KR20257019624 A KR 20257019624A KR 20250110870 A KR20250110870 A KR 20250110870A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide semiconductor
- semiconductor film
- film
- thin film
- peak
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2023-006862 | 2023-01-19 | ||
| JP2023006862 | 2023-01-19 | ||
| PCT/JP2023/046219 WO2024154544A1 (ja) | 2023-01-19 | 2023-12-22 | 酸化物半導体膜、薄膜トランジスタ、および電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250110870A true KR20250110870A (ko) | 2025-07-21 |
Family
ID=91955834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257019624A Pending KR20250110870A (ko) | 2023-01-19 | 2023-12-22 | 산화물 반도체막, 박막 트랜지스터 및 전자 기기 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20260006848A1 (https=) |
| JP (1) | JPWO2024154544A1 (https=) |
| KR (1) | KR20250110870A (https=) |
| CN (1) | CN120513703A (https=) |
| DE (1) | DE112023004843T5 (https=) |
| TW (1) | TW202445878A (https=) |
| WO (1) | WO2024154544A1 (https=) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014099601A (ja) | 2012-10-19 | 2014-05-29 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜を含む多層膜及び半導体装置の作製方法 |
| JP2016184771A (ja) | 2012-08-03 | 2016-10-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018006730A (ja) | 2016-02-12 | 2018-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置 |
| JP2021108405A (ja) | 2010-09-13 | 2021-07-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2021141338A (ja) | 2012-09-14 | 2021-09-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2021153196A (ja) | 2013-09-23 | 2021-09-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120091026A (ko) * | 2009-09-30 | 2012-08-17 | 이데미쓰 고산 가부시키가이샤 | Ｉｎ-Ｇａ-Ｚｎ-Ｏ계 산화물 소결체 |
| JP5189674B2 (ja) * | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
| JP6143423B2 (ja) * | 2012-04-16 | 2017-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| KR102492209B1 (ko) * | 2016-05-19 | 2023-01-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 산화물 반도체 및 트랜지스터 |
| CN110718468B (zh) * | 2019-09-26 | 2022-08-02 | 深圳大学 | 一种钐掺杂的金属氧化物薄膜晶体管及其制备方法和应用 |
-
2023
- 2023-12-22 CN CN202380086602.0A patent/CN120513703A/zh active Pending
- 2023-12-22 WO PCT/JP2023/046219 patent/WO2024154544A1/ja not_active Ceased
- 2023-12-22 JP JP2024571676A patent/JPWO2024154544A1/ja active Pending
- 2023-12-22 DE DE112023004843.6T patent/DE112023004843T5/de active Pending
- 2023-12-22 KR KR1020257019624A patent/KR20250110870A/ko active Pending
-
2024
- 2024-01-09 TW TW113100878A patent/TW202445878A/zh unknown
-
2025
- 2025-07-07 US US19/260,713 patent/US20260006848A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021108405A (ja) | 2010-09-13 | 2021-07-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2016184771A (ja) | 2012-08-03 | 2016-10-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2021141338A (ja) | 2012-09-14 | 2021-09-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2014099601A (ja) | 2012-10-19 | 2014-05-29 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜を含む多層膜及び半導体装置の作製方法 |
| JP2021153196A (ja) | 2013-09-23 | 2021-09-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018006730A (ja) | 2016-02-12 | 2018-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20260006848A1 (en) | 2026-01-01 |
| JPWO2024154544A1 (https=) | 2024-07-25 |
| CN120513703A (zh) | 2025-08-19 |
| DE112023004843T5 (de) | 2025-09-11 |
| TW202445878A (zh) | 2024-11-16 |
| WO2024154544A1 (ja) | 2024-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11 | Administrative time limit extension requested |
Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |