TW202445878A - 氧化物半導體膜、薄膜電晶體、及電子機器 - Google Patents

氧化物半導體膜、薄膜電晶體、及電子機器 Download PDF

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Publication number
TW202445878A
TW202445878A TW113100878A TW113100878A TW202445878A TW 202445878 A TW202445878 A TW 202445878A TW 113100878 A TW113100878 A TW 113100878A TW 113100878 A TW113100878 A TW 113100878A TW 202445878 A TW202445878 A TW 202445878A
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TW
Taiwan
Prior art keywords
oxide semiconductor
semiconductor film
film
thin film
peak
Prior art date
Application number
TW113100878A
Other languages
English (en)
Chinese (zh)
Inventor
渡壁創
津吹将志
佐佐木俊成
田丸尊也
望月真里奈
小野寺涼
渡部将弘
佐佐木大地
川嶋絵美
霍間勇輝
Original Assignee
日商日本顯示器股份有限公司
日商出光興產股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本顯示器股份有限公司, 日商出光興產股份有限公司 filed Critical 日商日本顯示器股份有限公司
Publication of TW202445878A publication Critical patent/TW202445878A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Thin Film Transistor (AREA)
TW113100878A 2023-01-19 2024-01-09 氧化物半導體膜、薄膜電晶體、及電子機器 TW202445878A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-006862 2023-01-19
JP2023006862 2023-01-19

Publications (1)

Publication Number Publication Date
TW202445878A true TW202445878A (zh) 2024-11-16

Family

ID=91955834

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113100878A TW202445878A (zh) 2023-01-19 2024-01-09 氧化物半導體膜、薄膜電晶體、及電子機器

Country Status (7)

Country Link
US (1) US20260006848A1 (https=)
JP (1) JPWO2024154544A1 (https=)
KR (1) KR20250110870A (https=)
CN (1) CN120513703A (https=)
DE (1) DE112023004843T5 (https=)
TW (1) TW202445878A (https=)
WO (1) WO2024154544A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120091026A (ko) * 2009-09-30 2012-08-17 이데미쓰 고산 가부시키가이샤 Ｉｎ-Ｇａ-Ｚｎ-Ｏ계 산화물 소결체
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5189674B2 (ja) * 2010-12-28 2013-04-24 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
JP6143423B2 (ja) * 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の製造方法
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
KR102492209B1 (ko) * 2016-05-19 2023-01-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 산화물 반도체 및 트랜지스터
CN110718468B (zh) * 2019-09-26 2022-08-02 深圳大学 一种钐掺杂的金属氧化物薄膜晶体管及其制备方法和应用

Also Published As

Publication number Publication date
US20260006848A1 (en) 2026-01-01
KR20250110870A (ko) 2025-07-21
JPWO2024154544A1 (https=) 2024-07-25
CN120513703A (zh) 2025-08-19
DE112023004843T5 (de) 2025-09-11
WO2024154544A1 (ja) 2024-07-25

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