DE112022007247T5 - Halbleiter-Chip - Google Patents

Halbleiter-Chip Download PDF

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Publication number
DE112022007247T5
DE112022007247T5 DE112022007247.4T DE112022007247T DE112022007247T5 DE 112022007247 T5 DE112022007247 T5 DE 112022007247T5 DE 112022007247 T DE112022007247 T DE 112022007247T DE 112022007247 T5 DE112022007247 T5 DE 112022007247T5
Authority
DE
Germany
Prior art keywords
region
semiconductor
semiconductor region
transistor
transistor cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022007247.4T
Other languages
German (de)
English (en)
Inventor
Takeyoshi Masuda
Yu Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd Tama-Shi Jp
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE112022007247T5 publication Critical patent/DE112022007247T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
DE112022007247.4T 2022-05-19 2022-12-19 Halbleiter-Chip Pending DE112022007247T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022082047 2022-05-19
JP2022-082047 2022-05-19
PCT/JP2022/046591 WO2023223588A1 (ja) 2022-05-19 2022-12-19 半導体チップ

Publications (1)

Publication Number Publication Date
DE112022007247T5 true DE112022007247T5 (de) 2025-03-06

Family

ID=88835148

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022007247.4T Pending DE112022007247T5 (de) 2022-05-19 2022-12-19 Halbleiter-Chip

Country Status (4)

Country Link
JP (1) JPWO2023223588A1 (https=)
CN (1) CN118872069A (https=)
DE (1) DE112022007247T5 (https=)
WO (1) WO2023223588A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012023291A (ja) 2010-07-16 2012-02-02 Denso Corp 炭化珪素半導体装置
JP2022082047A (ja) 2020-11-20 2022-06-01 住友ゴム工業株式会社 搬送台車、及び搬送方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6115678B1 (ja) * 2016-02-01 2017-04-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2019096631A (ja) * 2016-04-07 2019-06-20 三菱電機株式会社 半導体装置および電力変換装置
WO2019155783A1 (ja) * 2018-02-06 2019-08-15 住友電気工業株式会社 炭化珪素半導体装置
DE102018103849B4 (de) * 2018-02-21 2022-09-01 Infineon Technologies Ag Siliziumcarbid-Halbleiterbauelement mit einer in einer Grabenstruktur ausgebildeten Gateelektrode
JP7180402B2 (ja) * 2019-01-21 2022-11-30 株式会社デンソー 半導体装置
JP2021114496A (ja) * 2020-01-16 2021-08-05 信一郎 高谷 縦型窒化物半導体トランジスタ装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012023291A (ja) 2010-07-16 2012-02-02 Denso Corp 炭化珪素半導体装置
JP2022082047A (ja) 2020-11-20 2022-06-01 住友ゴム工業株式会社 搬送台車、及び搬送方法

Also Published As

Publication number Publication date
WO2023223588A1 (ja) 2023-11-23
CN118872069A (zh) 2024-10-29
JPWO2023223588A1 (https=) 2023-11-23

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Legal Events

Date Code Title Description
R081 Change of applicant/patentee

Owner name: MITSUMI ELECTRIC CO., LTD., TAMA-SHI, JP

Free format text: FORMER OWNER: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP