DE112022001872T5 - Halbleitermodul - Google Patents

Halbleitermodul Download PDF

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Publication number
DE112022001872T5
DE112022001872T5 DE112022001872.0T DE112022001872T DE112022001872T5 DE 112022001872 T5 DE112022001872 T5 DE 112022001872T5 DE 112022001872 T DE112022001872 T DE 112022001872T DE 112022001872 T5 DE112022001872 T5 DE 112022001872T5
Authority
DE
Germany
Prior art keywords
switching device
semiconductor module
source
diode
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022001872.0T
Other languages
German (de)
English (en)
Inventor
Yuhei NISHIDA
Mayumi Shiohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE112022001872T5 publication Critical patent/DE112022001872T5/de
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0051Diode reverse recovery losses
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)
DE112022001872.0T 2021-12-27 2022-11-08 Halbleitermodul Pending DE112022001872T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-212199 2021-12-27
JP2021212199 2021-12-27
PCT/JP2022/041620 WO2023127317A1 (ja) 2021-12-27 2022-11-08 半導体モジュール

Publications (1)

Publication Number Publication Date
DE112022001872T5 true DE112022001872T5 (de) 2024-01-18

Family

ID=86998728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022001872.0T Pending DE112022001872T5 (de) 2021-12-27 2022-11-08 Halbleitermodul

Country Status (5)

Country Link
US (1) US20240088796A1 (https=)
JP (1) JP7601262B2 (https=)
CN (1) CN117378047A (https=)
DE (1) DE112022001872T5 (https=)
WO (1) WO2023127317A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000324846A (ja) 1999-05-14 2000-11-24 Hitachi Ltd 電力変換装置
WO2015136603A1 (ja) 2014-03-10 2015-09-17 株式会社日立製作所 パワー半導体モジュール及びその製造検査方法
JP2021019094A (ja) 2019-07-19 2021-02-15 株式会社 日立パワーデバイス パワー半導体モジュール

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5323895B2 (ja) * 2011-06-23 2013-10-23 本田技研工業株式会社 半導体装置
JP6583072B2 (ja) * 2016-03-15 2019-10-02 住友電気工業株式会社 半導体モジュール
WO2017159029A1 (ja) * 2016-03-15 2017-09-21 住友電気工業株式会社 半導体モジュール
JP6962945B2 (ja) * 2019-01-30 2021-11-05 株式会社 日立パワーデバイス パワー半導体モジュールおよびそれを用いた電力変換装置
JP7567191B2 (ja) * 2020-03-27 2024-10-16 富士電機株式会社 半導体モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000324846A (ja) 1999-05-14 2000-11-24 Hitachi Ltd 電力変換装置
WO2015136603A1 (ja) 2014-03-10 2015-09-17 株式会社日立製作所 パワー半導体モジュール及びその製造検査方法
JP2021019094A (ja) 2019-07-19 2021-02-15 株式会社 日立パワーデバイス パワー半導体モジュール

Also Published As

Publication number Publication date
CN117378047A (zh) 2024-01-09
US20240088796A1 (en) 2024-03-14
JPWO2023127317A1 (https=) 2023-07-06
WO2023127317A1 (ja) 2023-07-06
JP7601262B2 (ja) 2024-12-17

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Legal Events

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R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0025070000

Ipc: H10D0080200000